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Yudong Kim
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Santa Clara, CA, US
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Patents Grants
last 30 patents
Information
Patent Grant
Dual-layer dielectric in memory device
Patent number
10,629,652
Issue date
Apr 21, 2020
Intel Corporation
Michael J. Bernhardt
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Dual resistive-material regions for phase change memory devices
Patent number
10,522,757
Issue date
Dec 31, 2019
Micron Technology, Inc.
Yudong Kim
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Dual resistance heater for phase change memory devices
Patent number
10,522,756
Issue date
Dec 31, 2019
Micron Technology, Inc.
Yudong Kim
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Dual-layer dielectric in memory device
Patent number
10,134,809
Issue date
Nov 20, 2018
Intel Corporation
Michael J. Bernhardt
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Dual-layer dielectric in memory device
Patent number
9,704,923
Issue date
Jul 11, 2017
Intel Corporation
Michael J. Bernhardt
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Copper compatible chalcogenide phase change memory with adjustable...
Patent number
9,203,024
Issue date
Dec 1, 2015
Intel Corporation
Yudong Kim
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Phase change memory with threshold switch select device
Patent number
9,159,915
Issue date
Oct 13, 2015
Ovonyx, Inc.
Ilya V. Karpov
G11 - INFORMATION STORAGE
Information
Patent Grant
Dual resistance heater for phase change devices and manufacturing m...
Patent number
8,952,299
Issue date
Feb 10, 2015
Micron Technology, Inc.
Yudong Kim
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Phase change memory with threshold switch select device
Patent number
8,637,342
Issue date
Jan 28, 2014
Ovonyx, Inc.
Ilya V. Karpov
G11 - INFORMATION STORAGE
Information
Patent Grant
Forming phase change memory cells
Patent number
8,536,013
Issue date
Sep 17, 2013
STMicroelectronics S.r.l.
Yudong Kim
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Dual resistance heater for phase change devices and manufacturing m...
Patent number
8,513,576
Issue date
Aug 20, 2013
Micron Technology, Inc.
Yudong Kim
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Process for manufacturing a copper compatible chalcogenide phase ch...
Patent number
8,222,627
Issue date
Jul 17, 2012
STMicroelectronics S.r.l.
Charles Kuo
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor structure, in particular phase change memory device h...
Patent number
8,026,173
Issue date
Sep 27, 2011
STMicroelectronics S.r.l.
Ilya Karpov
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Forming phase change memory cells
Patent number
7,973,302
Issue date
Jul 5, 2011
STMicroelectronics S.r.l.
Yudong Kim
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Dual resistance heater for phase change devices and manufacturing m...
Patent number
7,880,123
Issue date
Feb 1, 2011
Yudong Kim
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Structured, electrically-formed floating gate for flash memories
Patent number
7,847,333
Issue date
Dec 7, 2010
Charles Kuo
B82 - NANO-TECHNOLOGY
Information
Patent Grant
Phase change memory and manufacturing method thereof
Patent number
7,709,822
Issue date
May 4, 2010
STMicroeletronics S.r.l.
Ilya V. Karpov
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Phase change memory with damascene memory element
Patent number
7,534,625
Issue date
May 19, 2009
Ilya V. Karpov
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Flash memory cell having reduced floating gate to floating gate cou...
Patent number
7,465,625
Issue date
Dec 16, 2008
Been-jon K. Woo
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Structured, electrically-formed floating gate for flash memories
Patent number
7,374,996
Issue date
May 20, 2008
Charles Kuo
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Flash memory cell having reduced floating gate to floating gate cou...
Patent number
7,348,618
Issue date
Mar 25, 2008
Intel Corporation
Been-jon K. Woo
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Forming phase change memory arrays
Patent number
7,259,023
Issue date
Aug 21, 2007
Intel Corporation
Charles C. Kuo
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Phase change memory with damascene memory element
Patent number
7,135,696
Issue date
Nov 14, 2006
Intel Corporation
Ilya V. Karpov
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of fabrication of a novel flash integrated circuit
Patent number
6,265,292
Issue date
Jul 24, 2001
Intel Corporation
Krishna Parat
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
Information
Patent Application
DUAL-LAYER DIELECTRIC IN MEMORY DEVICE
Publication number
20190206942
Publication date
Jul 4, 2019
Intel Corporation
Michael J. Bernhardt
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
DUAL RESISTIVE-MATERIAL REGIONS FOR PHASE CHANGE MEMORY DEVICES
Publication number
20180138406
Publication date
May 17, 2018
Micron Technology, Inc.
Yudong Kim
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
DUAL-LAYER DIELECTRIC IN MEMORY DEVICE
Publication number
20170271412
Publication date
Sep 21, 2017
Intel Corporation
Michael J. Bernhardt
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Dual-layer dielectric in memory device
Publication number
20170186815
Publication date
Jun 29, 2017
Intel Corporation
Michael J. Bernhardt
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
DUAL RESISTANCE HEATER FOR PHASE CHANGE DEVICES AND MANUFACTURING M...
Publication number
20150188050
Publication date
Jul 2, 2015
Micron Technology, Inc.
Yudong Kim
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Phase Change Memory With Threshold Switch Select Device
Publication number
20140104939
Publication date
Apr 17, 2014
OVONYX, INC.
Ilya V. Karpov
G11 - INFORMATION STORAGE
Information
Patent Application
DUAL RESISTANCE HEATER FOR PHASE CHANGE DEVICES AND MANUFACTURING M...
Publication number
20140038379
Publication date
Feb 6, 2014
Micron Technology, Inc.
Yudong Kim
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
FORMING PHASE CHANGE MEMORY CELLS
Publication number
20110223738
Publication date
Sep 15, 2011
STMicroelectronics S.r.l.
Yudong Kim
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
DUAL RESISTANCE HEATER FOR PHASE CHANGE DEVICES AND MANUFACTURING M...
Publication number
20110155986
Publication date
Jun 30, 2011
Yudong Kim
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
FORMING PHASE CHANGE MEMORY CELLS
Publication number
20100163827
Publication date
Jul 1, 2010
STMicroelectronics S.r. I.
Yudong Kim
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
PROCESS FOR MANUFACTURING A COPPER COMPATIBLE CHALCOGENIDE PHASE CH...
Publication number
20090050872
Publication date
Feb 26, 2009
STMicroelectronics S.r.l.
Charles Kuo
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Copper compatible chalcogenide phase change memory with adjustable...
Publication number
20090026437
Publication date
Jan 29, 2009
Yudong Kim
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SEMICONDUCTOR STRUCTURE, IN PARTICULAR PHASE CHANGE MEMORY DEVICE H...
Publication number
20090020743
Publication date
Jan 22, 2009
STMicroelectronics S.r.l.
Ilya Karpov
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
STRUCTURED, ELECTRICALLY-FORMED FLOATING GATE FOR FLASH MEMORIES
Publication number
20080173925
Publication date
Jul 24, 2008
Intel Corporation
Charles Kuo
B82 - NANO-TECHNOLOGY
Information
Patent Application
PHASE CHANGE MEMORY AND MANUFACTURING METHOD THEREOF
Publication number
20080029752
Publication date
Feb 7, 2008
STMicroelectronics S.r.l.
Ilya V. Karpov
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Forming phase change memory arrays
Publication number
20070259479
Publication date
Nov 8, 2007
Charles C. Kuo
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Structured, electrically-formed floating gate for flash memories
Publication number
20070111492
Publication date
May 17, 2007
Charles Kuo
B82 - NANO-TECHNOLOGY
Information
Patent Application
Phase change memory with threshold switch select device
Publication number
20070105267
Publication date
May 10, 2007
Ilya V. Karpov
G11 - INFORMATION STORAGE
Information
Patent Application
Flash memory cell having reduced floating gate to floating gate cou...
Publication number
20070037350
Publication date
Feb 15, 2007
Been-jon K. Woo
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Phase change memory with damascene memory element
Publication number
20070026566
Publication date
Feb 1, 2007
Ilya V. Karpov
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Dual resistance heater for phase change devices and manufacturing m...
Publication number
20060246712
Publication date
Nov 2, 2006
STMicroelectronics S.r. I.
Yudong Kim
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Flash memory cell having reduced floating gate to floating gate cou...
Publication number
20060228858
Publication date
Oct 12, 2006
Been-jon K. Woo
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Phase change memory with damascene memory element
Publication number
20060073631
Publication date
Apr 6, 2006
Ilya V. Karpov
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Forming phase change memory arrays
Publication number
20060054991
Publication date
Mar 16, 2006
Charles C. Kuo
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Novel flash integrated circuit and its method of fabrication
Publication number
20010024857
Publication date
Sep 27, 2001
Krishna Parat
H01 - BASIC ELECTRIC ELEMENTS