Yue Ke

Person

Fishkill, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
FinFET with dielectric isolation after gate module for improved sou...
- Patent number 11,081,583
- Issue date Aug 3, 2021
- International Business Machines Corporation
- Eric C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with dielectric isolation after gate module for improved sou...
- Patent number 10,615,279
- Issue date Apr 7, 2020
- International Business Machines Corporation
- Eric C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with dielectric isolation after gate module for improved sou...
- Patent number 10,243,077
- Issue date Mar 26, 2019
- International Business Machines Corporation
- Eric C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with dielectric isolation after gate module for improved sou...
- Patent number 9,917,190
- Issue date Mar 13, 2018
- International Business Machines Corporation
- Eric C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming uniform and pitch independent fin recess
- Patent number 9,875,939
- Issue date Jan 23, 2018
- GLOBALFOUNDRIES Inc.
- Yue Ke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-limiting selective epitaxy process for preventing merger of se...
- Patent number 9,752,251
- Issue date Sep 5, 2017
- International Business Machines Corporation
- Kevin K. Chan
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods of forming semiconductor fin with carbon dopant for diffusi...
- Patent number 9,685,334
- Issue date Jun 20, 2017
- GLOBALFOUNDRIES Inc.
- Yue Ke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conformal buffer layer in source and drain regions of fin-type tran...
- Patent number 9,634,084
- Issue date Apr 25, 2017
- GLOBALFOUNDRIES Inc.
- Christopher D. Sheraw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diamond shaped source drain epitaxy with underlying buffer layer
- Patent number 9,577,099
- Issue date Feb 21, 2017
- GLOBALFOUNDRIES Inc.
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET and nanowire semiconductor devices with suspended channel re...
- Patent number 9,577,100
- Issue date Feb 21, 2017
- GLOBALFOUNDRIES Inc.
- Kangguo Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Epitaxial growth of material on source/drain regions of FinFET stru...
- Patent number 9,536,985
- Issue date Jan 3, 2017
- GLOBALFOUNDRIES Inc.
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Uniform junction formation in FinFETs
- Patent number 9,466,616
- Issue date Oct 11, 2016
- GLOBALFOUNDRIES Inc.
- Eric C. T. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance and defect free epitaxial semiconductor material for...
- Patent number 9,349,649
- Issue date May 24, 2016
- GLOBALFOUNDRIES Inc.
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance and defect free epitaxial semiconductor material for...
- Patent number 9,349,650
- Issue date May 24, 2016
- GLOBALFOUNDRIES Inc.
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Uniform junction formation in FinFETs
- Patent number 9,318,608
- Issue date Apr 19, 2016
- GLOBALFOUNDRIES Inc.
- Eric C. T. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
finFET with dielectric isolation after gate module for improved sou...
- Patent number 9,312,364
- Issue date Apr 12, 2016
- International Business Machines Corporation
- Eric C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxially grown silicon germanium channel FinFET with silicon und...
- Patent number 9,287,264
- Issue date Mar 15, 2016
- GLOBALFOUNDRIES Inc.
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FINFET structures with fins recessed beneath the gate
- Patent number 9,246,003
- Issue date Jan 26, 2016
- GLOBALFOUNDRIES Inc.
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single crystal source-drain merged by polycrystalline material
- Patent number 9,123,826
- Issue date Sep 1, 2015
- International Business Machines Corporation
- Eric C. Harley
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FINFET WITH DIELECTRIC ISOLATION AFTER GATE MODULE FOR IMPROVED SOU...
- Publication number 20200066908
- Publication date Feb 27, 2020
- International Business Machines Corporation
- ERIC C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANGLED BEAM INSPECTION SYSTEM FOR SEMICONDUCTOR DEVICES
- Publication number 20190113469
- Publication date Apr 18, 2019
- GLOBALFOUNDRIES INC.
- Oliver D. Patterson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH DIELECTRIC ISOLATION AFTER GATE MODULE FOR IMPROVED SOU...
- Publication number 20180097113
- Publication date Apr 5, 2018
- International Business Machines Corporation
- ERIC C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIAMOND SHAPED SOURCE DRAIN EPITAXY WITH UNDERLYING BUFFER LAYER
- Publication number 20160268413
- Publication date Sep 15, 2016
- GLOBALFOUNDRIES INC.
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH DIELECTRIC ISOLATION AFTER GATE MODULE FOR IMPROVED SOU...
- Publication number 20160197186
- Publication date Jul 7, 2016
- International Business Machines Corporation
- ERIC C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNIFORM JUNCTION FORMATION IN FINFETS
- Publication number 20160181285
- Publication date Jun 23, 2016
- GLOBALFOUNDRIES INC.
- Eric C.T. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIALLY GROWN SILICON GERMANIUM CHANNEL FINFET WITH SILICON UND...
- Publication number 20160163707
- Publication date Jun 9, 2016
- GLOBALFOUNDRIES INC.
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNIFORM JUNCTION FORMATION IN FINFETS
- Publication number 20160093740
- Publication date Mar 31, 2016
- International Business Machines Corporation
- Eric C. T. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL GROWTH OF MATERIAL ON SOURCE/DRAIN REGIONS OF FINFET STRU...
- Publication number 20160093720
- Publication date Mar 31, 2016
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH DIELECTRIC ISOLATION AFTER GATE MODULE FOR IMPROVED SOU...
- Publication number 20160035878
- Publication date Feb 4, 2016
- International Business Machines Corporation
- ERIC C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW RESISTANCE AND DEFECT FREE EPITAXIAL SEMICONDUCTOR MATERIAL FOR...
- Publication number 20150380314
- Publication date Dec 31, 2015
- International Business Machines Corporation
- Kevin K. CHAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW RESISTANCE AND DEFECT FREE EPITAXIAL SEMICONDUCTOR MATERIAL FOR...
- Publication number 20150380489
- Publication date Dec 31, 2015
- International Business Machines Corporation
- Kevin K. CHAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET AND NANOWIRE SEMICONDUCTOR DEVICES WITH SUSPENDED CHANNEL RE...
- Publication number 20150364603
- Publication date Dec 17, 2015
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH DIELECTRIC ISOLATION AFTER GATE MODULE FOR IMPROVED SOU...
- Publication number 20150349093
- Publication date Dec 3, 2015
- International Business Machines Corporation
- ERIC C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE-CRYSTAL SOURCE-DRAIN MERGED BY POLYCRYSTALLINE MATERIAL
- Publication number 20150270332
- Publication date Sep 24, 2015
- International Business Machines Corporation
- Eric C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET STRUCTURES WITH FINS RECESSED BENEATH THE GATE
- Publication number 20150137193
- Publication date May 21, 2015
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-LIMITING SELECTIVE EPITAXY PROCESS FOR PREVENTING MERGER OF SE...
- Publication number 20140308782
- Publication date Oct 16, 2014
- International Business Machines Corporation
- Kevin K. Chan
- C30 - CRYSTAL GROWTH

Person

Patents Grantslast 30 patents

FinFET with dielectric isolation after gate module for improved sou...

FinFET with dielectric isolation after gate module for improved sou...

FinFET with dielectric isolation after gate module for improved sou...

FinFET with dielectric isolation after gate module for improved sou...

Methods of forming uniform and pitch independent fin recess

Self-limiting selective epitaxy process for preventing merger of se...

Methods of forming semiconductor fin with carbon dopant for diffusi...

Conformal buffer layer in source and drain regions of fin-type tran...

Diamond shaped source drain epitaxy with underlying buffer layer

FinFET and nanowire semiconductor devices with suspended channel re...

Epitaxial growth of material on source/drain regions of FinFET stru...

Uniform junction formation in FinFETs

Low resistance and defect free epitaxial semiconductor material for...

Low resistance and defect free epitaxial semiconductor material for...

Uniform junction formation in FinFETs

finFET with dielectric isolation after gate module for improved sou...

Epitaxially grown silicon germanium channel FinFET with silicon und...

FINFET structures with fins recessed beneath the gate

Single crystal source-drain merged by polycrystalline material

Patents Applicationslast 30 patents

FINFET WITH DIELECTRIC ISOLATION AFTER GATE MODULE FOR IMPROVED SOU...

ANGLED BEAM INSPECTION SYSTEM FOR SEMICONDUCTOR DEVICES

FINFET WITH DIELECTRIC ISOLATION AFTER GATE MODULE FOR IMPROVED SOU...

DIAMOND SHAPED SOURCE DRAIN EPITAXY WITH UNDERLYING BUFFER LAYER

FINFET WITH DIELECTRIC ISOLATION AFTER GATE MODULE FOR IMPROVED SOU...

UNIFORM JUNCTION FORMATION IN FINFETS

EPITAXIALLY GROWN SILICON GERMANIUM CHANNEL FINFET WITH SILICON UND...

UNIFORM JUNCTION FORMATION IN FINFETS

EPITAXIAL GROWTH OF MATERIAL ON SOURCE/DRAIN REGIONS OF FINFET STRU...

FINFET WITH DIELECTRIC ISOLATION AFTER GATE MODULE FOR IMPROVED SOU...

LOW RESISTANCE AND DEFECT FREE EPITAXIAL SEMICONDUCTOR MATERIAL FOR...

LOW RESISTANCE AND DEFECT FREE EPITAXIAL SEMICONDUCTOR MATERIAL FOR...

FINFET AND NANOWIRE SEMICONDUCTOR DEVICES WITH SUSPENDED CHANNEL RE...

FINFET WITH DIELECTRIC ISOLATION AFTER GATE MODULE FOR IMPROVED SOU...

SINGLE-CRYSTAL SOURCE-DRAIN MERGED BY POLYCRYSTALLINE MATERIAL

FINFET STRUCTURES WITH FINS RECESSED BENEATH THE GATE

SELF-LIMITING SELECTIVE EPITAXY PROCESS FOR PREVENTING MERGER OF SE...