Yue Liang

Person

Beacon, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor process temperature optimization
- Patent number 9,349,609
- Issue date May 24, 2016
- GLOBALFOUNDRIES Inc.
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tucked active region without dummy poly for performance boost and v...
- Patent number 9,337,338
- Issue date May 10, 2016
- GLOBALFOUNDRIES Inc.
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Work function adjustment by carbon implant in semiconductor devices...
- Patent number 9,252,146
- Issue date Feb 2, 2016
- International Business Machines Corporation
- Yue Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tucked active region without dummy poly for performance boost and v...
- Patent number 9,105,722
- Issue date Aug 11, 2015
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary metal oxide semiconductor (CMOS) device having gate s...
- Patent number 9,082,877
- Issue date Jul 14, 2015
- International Business Machines Corporation
- Yue Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold voltage adjustment for thin body MOSFETs
- Patent number 9,040,399
- Issue date May 26, 2015
- International Business Machines Corporation
- MaryJane Brodsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dummy gate interconnect for semiconductor device
- Patent number 8,993,389
- Issue date Mar 31, 2015
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for pFET junction profile with SiGe channel
- Patent number 8,962,417
- Issue date Feb 24, 2015
- International Business Machines Corporation
- Kern Rim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tucked active region without dummy poly for performance boost and v...
- Patent number 8,853,035
- Issue date Oct 7, 2014
- International Business Machines Corporation
- Xiaojun Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS having a sic/sige alloy stack
- Patent number 8,835,234
- Issue date Sep 16, 2014
- International Business Machines Corporation
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary metal oxide semiconductor (CMOS) device having gate s...
- Patent number 8,803,243
- Issue date Aug 12, 2014
- International Business Machines Corporation
- Yue Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Post-gate shallow trench isolation structure formation
- Patent number 8,785,291
- Issue date Jul 22, 2014
- International Business Machines Corporation
- Xiaojun Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Post-gate shallow trench isolation structure formation
- Patent number 8,779,469
- Issue date Jul 15, 2014
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programmable FETs using Vt-shift effect and methods of manufacture
- Patent number 8,766,378
- Issue date Jul 1, 2014
- International Business Machines Corporation
- Eduard A. Cartier
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Work function adjustment by carbon implant in semiconductor devices...
- Patent number 8,729,637
- Issue date May 20, 2014
- International Business Machines Corporation
- Yue Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for pFET junction profile with SiGe channel
- Patent number 8,659,054
- Issue date Feb 25, 2014
- International Business Machines Corporation
- Kern Rim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric FET including sloped threshold voltage adjusting materia...
- Patent number 8,629,022
- Issue date Jan 14, 2014
- International Business Machines Corporation
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programmable FETs using Vt-shift effect and methods of manufacture
- Patent number 8,492,247
- Issue date Jul 23, 2013
- International Business Machines Corporation
- Eduard A. Cartier
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
CMOS having a SiC/SiGe alloy stack
- Patent number 8,476,706
- Issue date Jul 2, 2013
- International Business Machines Corporation
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective partial gate stack for improved device isolation
- Patent number 8,466,496
- Issue date Jun 18, 2013
- International Business Machines Corporation
- Xiaojun Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric FET including sloped threshold voltage adjusting materia...
- Patent number 8,445,974
- Issue date May 21, 2013
- International Business Machines Corporation
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual metal and dual dielectric integration for metal high-K FETs
- Patent number 8,436,427
- Issue date May 7, 2013
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of providing threshold voltage adjustment through gate diele...
- Patent number 8,354,309
- Issue date Jan 15, 2013
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for gate height scaling with high-k/metal gate...
- Patent number 8,227,870
- Issue date Jul 24, 2012
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for gate height scaling with high-k/metal gate...
- Patent number 8,138,037
- Issue date Mar 20, 2012
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold voltage adjustment through gate dielectric stack modifica...
- Patent number 8,106,455
- Issue date Jan 31, 2012
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric semiconductor devices and method of fabricating
- Patent number 7,999,332
- Issue date Aug 16, 2011
- International Business Machines Corporation
- Jun Yuan
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Dual metal and dual dielectric integration for metal high-k FETs
- Patent number 7,943,457
- Issue date May 17, 2011
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having dual metal gates and method of manufacture
- Patent number 7,838,908
- Issue date Nov 23, 2010
- International Business Machines Corporation
- Unoh Kwon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Negative differential resistance devices and approaches therefor
- Patent number 7,508,701
- Issue date Mar 24, 2009
- The Board of Trustees of the Leland Stanford Junior University
- Yue Liang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TUCKED ACTIVE REGION WITHOUT DUMMY POLY FOR PERFORMANCE BOOST AND V...
- Publication number 20150349089
- Publication date Dec 3, 2015
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR PROCESS TEMPERATURE OPTIMIZATION
- Publication number 20150279692
- Publication date Oct 1, 2015
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUCKED ACTIVE REGION WITHOUT DUMMY POLY FOR PERFORMANCE BOOST AND V...
- Publication number 20150001585
- Publication date Jan 1, 2015
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) DEVICE HAVING GATE S...
- Publication number 20140349451
- Publication date Nov 27, 2014
- International Business Machines Corporation
- Yue Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR pFET JUNCTION PROFILE WITH SiGe CHANNEL
- Publication number 20140273381
- Publication date Sep 18, 2014
- International Business Machines Corporation
- Kern Rim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORK FUNCTION ADJUSTMENT BY CARBON IMPLANT IN SEMICONDUCTOR DEVICES...
- Publication number 20140246727
- Publication date Sep 4, 2014
- International Business Machines Corporation
- Yue Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUMMY GATE INTERCONNECT FOR SEMICONDUCTOR DEVICE
- Publication number 20140191295
- Publication date Jul 10, 2014
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POST-GATE SHALLOW TRENCH ISOLATION STRUCTURE FORMATION
- Publication number 20140070274
- Publication date Mar 13, 2014
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS HAVING A SIC/SIGE ALLOY STACK
- Publication number 20130273699
- Publication date Oct 17, 2013
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROGRAMMABLE FETs USING Vt-SHIFT EFFECT AND METHODS OF MANUFACTURE
- Publication number 20130187244
- Publication date Jul 25, 2013
- International Business Machines Corporation
- Eduard A. CARTIER
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
CMOS HAVING A SIC/SIGE ALLOY STACK
- Publication number 20130168695
- Publication date Jul 4, 2013
- International Business Machines Corporation
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Complementary Metal Oxide Semiconductor (CMOS) Device Having Gate S...
- Publication number 20130168776
- Publication date Jul 4, 2013
- International Business Machines Corporation
- Yue Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE PARTIAL GATE STACK FOR IMPROVED DEVICE ISOLATION
- Publication number 20130126976
- Publication date May 23, 2013
- International Business Machines Corporation
- Xiaojun Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Threshold Voltage Adjustment For Thin Body Mosfets
- Publication number 20130105896
- Publication date May 2, 2013
- International Business Machines Corporation
- MaryJane Brodsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THRESHOLD VOLTAGE ADJUSTMENT FOR THIN BODY MOSFETS
- Publication number 20130105894
- Publication date May 2, 2013
- International Business Machines Corporation
- MaryJane Brodsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POST-GATE SHALLOW TRENCH ISOLATION STRUCTURE FORMATION
- Publication number 20130099281
- Publication date Apr 25, 2013
- International Business Machines Corporation
- Xiaojun Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Tucked Active Region Without Dummy Poly For Performance Boost and V...
- Publication number 20130087832
- Publication date Apr 11, 2013
- International Business Machines Corporation
- Xiaojun Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Work Function Adjustment By Carbon Implant In Semiconductor Devices...
- Publication number 20130087859
- Publication date Apr 11, 2013
- International Business Machines Corporation
- Yue Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC FET INCLUDING SLOPED THRESHOLD VOLTAGE ADJUSTING MATERIA...
- Publication number 20120171831
- Publication date Jul 5, 2012
- International Business Machines Corporation
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR GATE HEIGHT SCALING WITH HIGH-K/METAL GATE...
- Publication number 20120126335
- Publication date May 24, 2012
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THRESHOLD VOLTAGE ADJUSTMENT THROUGH GATE DIELECTRIC STACK MODIFICA...
- Publication number 20120108017
- Publication date May 3, 2012
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and Structure for pFET Junction Profile With SiGe Channel
- Publication number 20120091506
- Publication date Apr 19, 2012
- International Business Machines Corporation
- Kern Rim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROGRAMMABLE FETs USING Vt-SHIFT EFFECT AND METHODS OF MANUFACTURE
- Publication number 20120043622
- Publication date Feb 23, 2012
- International Business Machines Corporation
- Eduard A. CARTIER
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
DUAL METAL AND DUAL DIELECTRIC INTEGRATION FOR METAL HIGH-K FETS
- Publication number 20110180880
- Publication date Jul 28, 2011
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC FET INCLUDING SLOPED THRESHOLD VOLTAGE ADJUSTING MATERIA...
- Publication number 20110163385
- Publication date Jul 7, 2011
- International Business Machines Corporation
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Asymmetric Semiconductor Devices and Method of Fabricating
- Publication number 20100289085
- Publication date Nov 18, 2010
- International Business Machines Corporation
- Jun Yuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Threshold Voltage Adjustment Through Gate Dielectric Stack Modifica...
- Publication number 20100276753
- Publication date Nov 4, 2010
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL METAL AND DUAL DIELECTRIC INTEGRATION FOR METAL HIGH-K FETS
- Publication number 20100258881
- Publication date Oct 14, 2010
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR GATE HEIGHT SCALING WITH HIGH-K/METAL GATE...
- Publication number 20100237435
- Publication date Sep 23, 2010
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING DUAL METAL GATES AND METHOD OF MANUFACTURE
- Publication number 20100187610
- Publication date Jul 29, 2010
- International Business Machines Corporation
- Unoh Kwon
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Semiconductor process temperature optimization

Tucked active region without dummy poly for performance boost and v...

Work function adjustment by carbon implant in semiconductor devices...

Tucked active region without dummy poly for performance boost and v...

Complementary metal oxide semiconductor (CMOS) device having gate s...

Threshold voltage adjustment for thin body MOSFETs

Dummy gate interconnect for semiconductor device

Method and structure for pFET junction profile with SiGe channel

Tucked active region without dummy poly for performance boost and v...

MOS having a sic/sige alloy stack

Complementary metal oxide semiconductor (CMOS) device having gate s...

Post-gate shallow trench isolation structure formation

Post-gate shallow trench isolation structure formation

Programmable FETs using Vt-shift effect and methods of manufacture

Work function adjustment by carbon implant in semiconductor devices...

Method and structure for pFET junction profile with SiGe channel

Asymmetric FET including sloped threshold voltage adjusting materia...

Programmable FETs using Vt-shift effect and methods of manufacture

CMOS having a SiC/SiGe alloy stack

Selective partial gate stack for improved device isolation

Asymmetric FET including sloped threshold voltage adjusting materia...

Dual metal and dual dielectric integration for metal high-K FETs

Method of providing threshold voltage adjustment through gate diele...

Method and structure for gate height scaling with high-k/metal gate...

Method and structure for gate height scaling with high-k/metal gate...

Threshold voltage adjustment through gate dielectric stack modifica...

Asymmetric semiconductor devices and method of fabricating

Dual metal and dual dielectric integration for metal high-k FETs

Semiconductor device having dual metal gates and method of manufacture

Negative differential resistance devices and approaches therefor

Patents Applicationslast 30 patents

TUCKED ACTIVE REGION WITHOUT DUMMY POLY FOR PERFORMANCE BOOST AND V...

SEMICONDUCTOR PROCESS TEMPERATURE OPTIMIZATION

TUCKED ACTIVE REGION WITHOUT DUMMY POLY FOR PERFORMANCE BOOST AND V...

COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) DEVICE HAVING GATE S...

METHOD AND STRUCTURE FOR pFET JUNCTION PROFILE WITH SiGe CHANNEL

WORK FUNCTION ADJUSTMENT BY CARBON IMPLANT IN SEMICONDUCTOR DEVICES...

DUMMY GATE INTERCONNECT FOR SEMICONDUCTOR DEVICE

POST-GATE SHALLOW TRENCH ISOLATION STRUCTURE FORMATION

MOS HAVING A SIC/SIGE ALLOY STACK

PROGRAMMABLE FETs USING Vt-SHIFT EFFECT AND METHODS OF MANUFACTURE

CMOS HAVING A SIC/SIGE ALLOY STACK

Complementary Metal Oxide Semiconductor (CMOS) Device Having Gate S...

SELECTIVE PARTIAL GATE STACK FOR IMPROVED DEVICE ISOLATION

Threshold Voltage Adjustment For Thin Body Mosfets

THRESHOLD VOLTAGE ADJUSTMENT FOR THIN BODY MOSFETS

POST-GATE SHALLOW TRENCH ISOLATION STRUCTURE FORMATION

Tucked Active Region Without Dummy Poly For Performance Boost and V...

Work Function Adjustment By Carbon Implant In Semiconductor Devices...

ASYMMETRIC FET INCLUDING SLOPED THRESHOLD VOLTAGE ADJUSTING MATERIA...

METHOD AND STRUCTURE FOR GATE HEIGHT SCALING WITH HIGH-K/METAL GATE...

THRESHOLD VOLTAGE ADJUSTMENT THROUGH GATE DIELECTRIC STACK MODIFICA...

Method and Structure for pFET Junction Profile With SiGe Channel

PROGRAMMABLE FETs USING Vt-SHIFT EFFECT AND METHODS OF MANUFACTURE

DUAL METAL AND DUAL DIELECTRIC INTEGRATION FOR METAL HIGH-K FETS

ASYMMETRIC FET INCLUDING SLOPED THRESHOLD VOLTAGE ADJUSTING MATERIA...

Asymmetric Semiconductor Devices and Method of Fabricating

Threshold Voltage Adjustment Through Gate Dielectric Stack Modifica...

DUAL METAL AND DUAL DIELECTRIC INTEGRATION FOR METAL HIGH-K FETS

METHOD AND STRUCTURE FOR GATE HEIGHT SCALING WITH HIGH-K/METAL GATE...

SEMICONDUCTOR DEVICE HAVING DUAL METAL GATES AND METHOD OF MANUFACTURE