Yue-Ming HSIN

Person

Tainan City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Device and semiconductor structure for improving the disadvantages...
- Patent number 11,355,625
- Issue date Jun 7, 2022
- Delta Electronics, Inc.
- Chun-Chieh Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Si photodiode with symmetry layout and deep well bias in CMOS techn...
- Patent number 8,598,639
- Issue date Dec 3, 2013
- National Central University
- Yue-Ming Hsin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral avalanche photodiode structure
- Patent number 8,445,992
- Issue date May 21, 2013
- National Central University
- Yue-Ming Hsin
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Method of forming a planar combined structure of a bipolar junction...
- Patent number 7,759,172
- Issue date Jul 20, 2010
- National Central University
- Yue-Ming Hsin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN heterojunction bipolar transistor with a p-type strained InGaN...
- Patent number 7,622,788
- Issue date Nov 24, 2009
- National Central University
- Yue-Ming Hsin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING A SEMICONDUCTOR STRUCTURE
- Publication number 20220130984
- Publication date Apr 28, 2022
- National Central University
- Yue-Ming HSIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE AND SEMICONDUCTOR STRUCTURE FOR IMPROVING THE DISADVANTAGES...
- Publication number 20220029008
- Publication date Jan 27, 2022
- Delta Electronics, Inc.
- Chun-Chieh YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDES BASED SEMICONDUCTOR DEVICE
- Publication number 20140217416
- Publication date Aug 7, 2014
- National Central University
- Wen-Chia LIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL AVALANCHE PHOTODIODE STRUCTURE
- Publication number 20130026604
- Publication date Jan 31, 2013
- National Central University
- Yue-Ming Hsin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SI PHOTODIODE WITH SYMMETRY LAYOUT AND DEEP WELL BIAS IN CMOS TECHN...
- Publication number 20120175690
- Publication date Jul 12, 2012
- National Central University
- Yue-Ming Hsin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON PHOTODETECTION MODULE
- Publication number 20110079708
- Publication date Apr 7, 2011
- Yue-Ming Hsin
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
FLUORESCENCE DETECTION SYSTEM, METHOD, AND DEVICE FOR MEASURING BIO...
- Publication number 20110059533
- Publication date Mar 10, 2011
- Yue-Ming HSIN
- G01 - MEASURING TESTING
Information Patent Application
SILICON PHOTODETECTOR AND METHOD FOR FORMING THE SAME
- Publication number 20090001489
- Publication date Jan 1, 2009
- Yue-Ming Hsin
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Planar Combined Structure of a Bipolar Junction Transistor and N-ty...
- Publication number 20080299714
- Publication date Dec 4, 2008
- National Central University
- Yue-Ming Hsin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Planar combined structure of a bipolar junction transistor and N-ty...
- Publication number 20080197422
- Publication date Aug 21, 2008
- National Central University
- Yue-Ming Hsin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN HETEROJUNCTION BIPOLAR TRANSISTOR WITH A P-TYPE STRAINED InGaN...
- Publication number 20070114518
- Publication date May 24, 2007
- Yue-Ming Hsin
- H01 - BASIC ELECTRIC ELEMENTS

Yue-Ming HSIN

Person

Patents Grantslast 30 patents

Device and semiconductor structure for improving the disadvantages...

Si photodiode with symmetry layout and deep well bias in CMOS techn...

Lateral avalanche photodiode structure

Method of forming a planar combined structure of a bipolar junction...

GaN heterojunction bipolar transistor with a p-type strained InGaN...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD OF FORMING A SEMICONDUCTOR STRUCTURE

DEVICE AND SEMICONDUCTOR STRUCTURE FOR IMPROVING THE DISADVANTAGES...

NITRIDES BASED SEMICONDUCTOR DEVICE

LATERAL AVALANCHE PHOTODIODE STRUCTURE

SI PHOTODIODE WITH SYMMETRY LAYOUT AND DEEP WELL BIAS IN CMOS TECHN...

SILICON PHOTODETECTION MODULE

FLUORESCENCE DETECTION SYSTEM, METHOD, AND DEVICE FOR MEASURING BIO...

SILICON PHOTODETECTOR AND METHOD FOR FORMING THE SAME

Planar Combined Structure of a Bipolar Junction Transistor and N-ty...

Planar combined structure of a bipolar junction transistor and N-ty...

GaN HETEROJUNCTION BIPOLAR TRANSISTOR WITH A P-TYPE STRAINED InGaN...