Yue Zhong

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Ballston Lake, NY, US

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Patents Grantslast 30 patents

Information Patent Grant
Spacer structures for a transistor device
- Patent number 10,872,979
- Issue date Dec 22, 2020
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench isolation preservation during transistor fabrication
- Patent number 10,784,143
- Issue date Sep 22, 2020
- GLOBALFOUNDRIES Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming spacers adjacent gate structures of a transistor...
- Patent number 10,629,739
- Issue date Apr 21, 2020
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulating gate separation structure
- Patent number 10,431,499
- Issue date Oct 1, 2019
- GLOBALFOUNDRIES Inc.
- Guowei Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming source/drain contact structures on integrated ci...
- Patent number 10,373,877
- Issue date Aug 6, 2019
- GLOBALFOUNDRIES Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate oxide formation through hybrid methods of thermal and depositi...
- Patent number 10,361,289
- Issue date Jul 23, 2019
- GLOBALFOUNDRIES Inc.
- Wei Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulating gate separation structure and methods of making same
- Patent number 10,153,209
- Issue date Dec 11, 2018
- GLOBALFOUNDRIES Inc.
- Guowei Xu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LONG CHANNEL FIN TRANSISTORS IN NANORIBBON-BASED DEVICES
- Publication number 20240321987
- Publication date Sep 26, 2024
- Intel Corporation
- Tao Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-TIER MEMORY STRUCTURE WITH GRADED CHARACTERISTICS
- Publication number 20230371233
- Publication date Nov 16, 2023
- Intel Corporation
- Abhishek Anil Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH ISOLATION PRESERVATION DURING TRANSISTOR FABRICATION
- Publication number 20200251377
- Publication date Aug 6, 2020
- GLOBALFOUNDRIES INC.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL SPACER STRUCTURES FOR A TRANSISTOR DEVICE
- Publication number 20200168731
- Publication date May 28, 2020
- GLOBALFOUNDRIES INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING SPACERS ADJACENT GATE STRUCTURES OF A TRANSISTOR...
- Publication number 20200027979
- Publication date Jan 23, 2020
- GLOBALFOUNDRIES INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATING GATE SEPARATION STRUCTURE
- Publication number 20190244865
- Publication date Aug 8, 2019
- GLOBALFOUNDRIES INC.
- Guowei Xu
- H01 - BASIC ELECTRIC ELEMENTS