YuGuo Wang

Person

Plano, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Direct current measurement of 1/f transistor noise
- Patent number 11,796,588
- Issue date Oct 24, 2023
- Texas Instruments Incorporated
- Yuguo Wang
- G01 - MEASURING TESTING
Information Patent Grant
FET using trench isolation as the gate dielectric
- Patent number 11,404,556
- Issue date Aug 2, 2022
- Texas Instruments Incorporated
- Zachary Ka Fai Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Direct current measurement of 1/f transistor noise
- Patent number 11,249,130
- Issue date Feb 15, 2022
- Texas Instruments Incorporated
- Yuguo Wang
- G01 - MEASURING TESTING
Information Patent Grant
Capacitive mismatch measurement
- Patent number 10,236,900
- Issue date Mar 19, 2019
- Texas Instruments Incorporated
- Steven John Loveless
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Method of improving bipolar device signal to noise performance by r...
- Patent number 9,818,740
- Issue date Nov 14, 2017
- Texas Instruments Incorporated
- Weidong Tian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of improving bipolar device signal to noise performance by r...
- Patent number 9,548,298
- Issue date Jan 17, 2017
- Texas Instuments Incorporated
- Weidong Tian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrical test structure to detect stress induced defects using di...
- Patent number 7,968,878
- Issue date Jun 28, 2011
- Texas Instruments Incorporated
- Rajni J. Aggarwal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming enhanced device via transverse stress
- Patent number 7,534,676
- Issue date May 19, 2009
- Texas Instruments Incorporated
- Robert C. Bowen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced PMOS via transverse stress
- Patent number 7,268,399
- Issue date Sep 11, 2007
- Texas Instruments Incorporated
- Robert C. Bowen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ULTRA-LOW LEAKAGE DIODES USED FOR LOW INPUT BIAS CURRENT
- Publication number 20230275082
- Publication date Aug 31, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Siva Kumar SUDANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION SCHEME TO BUILD RESISTOR, CAPACITOR, EFUSE USING SILICO...
- Publication number 20220375856
- Publication date Nov 24, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FET USING TRENCH ISOLATION AS THE GATE DIELECTRIC
- Publication number 20220140105
- Publication date May 5, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Zachary Ka Fai Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIRECT CURRENT MEASUREMENT OF 1/F TRANSISTOR NOISE
- Publication number 20220082608
- Publication date Mar 17, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Yuguo WANG
- G01 - MEASURING TESTING
Information Patent Application
DIRECT CURRENT MEASUREMENT OF 1/F TRANSISTOR NOISE
- Publication number 20190204375
- Publication date Jul 4, 2019
- TEXAS INSTRUMENTS INCORPORATED
- Yuguo WANG
- G01 - MEASURING TESTING
Information Patent Application
CAPACITIVE MISMATCH MEASUREMENT
- Publication number 20190181874
- Publication date Jun 13, 2019
- TEXAS INSTRUMENTS INCORPORATED
- Steven John LOVELESS
- G01 - MEASURING TESTING
Information Patent Application
METHOD OF IMPROVING BIPOLAR DEVICE SIGNAL TO NOISE PERFORMANCE BY R...
- Publication number 20170141101
- Publication date May 18, 2017
- TEXAS INSTRUMENTS INCORPORATED
- Weidong Tian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRICAL TEST STRUCTURE TO DETECT STRESS INDUCED DEFECTS USING DI...
- Publication number 20100032670
- Publication date Feb 11, 2010
- TEXAS INSTRUMENTS INCORPORATED
- Rajni J. AGGARWAL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Enhanced PMOS via transverse stress
- Publication number 20070264767
- Publication date Nov 15, 2007
- TEXAS INSTRUMENTS INCORPORATED
- Robert C. Bowen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Enhanced PMOS via transverse stress
- Publication number 20060043424
- Publication date Mar 2, 2006
- TEXAS INSTRUMENTS INCORPORATED
- Robert C. Bowen
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Direct current measurement of 1/f transistor noise

FET using trench isolation as the gate dielectric

Direct current measurement of 1/f transistor noise

Capacitive mismatch measurement

Method of improving bipolar device signal to noise performance by r...

Method of improving bipolar device signal to noise performance by r...

Electrical test structure to detect stress induced defects using di...

Method of forming enhanced device via transverse stress

Enhanced PMOS via transverse stress

Patents Applicationslast 30 patents

ULTRA-LOW LEAKAGE DIODES USED FOR LOW INPUT BIAS CURRENT

INTEGRATION SCHEME TO BUILD RESISTOR, CAPACITOR, EFUSE USING SILICO...

FET USING TRENCH ISOLATION AS THE GATE DIELECTRIC

DIRECT CURRENT MEASUREMENT OF 1/F TRANSISTOR NOISE

DIRECT CURRENT MEASUREMENT OF 1/F TRANSISTOR NOISE

CAPACITIVE MISMATCH MEASUREMENT

METHOD OF IMPROVING BIPOLAR DEVICE SIGNAL TO NOISE PERFORMANCE BY R...

ELECTRICAL TEST STRUCTURE TO DETECT STRESS INDUCED DEFECTS USING DI...

Enhanced PMOS via transverse stress

Enhanced PMOS via transverse stress