Yuichiro TOKUDA

Person

Miyoshi-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Methods for manufacturing silicon carbide single crystal ingot and...
- Patent number 12,071,709
- Issue date Aug 27, 2024
- Denso Corporation
- Isaho Kamata
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide single crystal
- Patent number 11,846,040
- Issue date Dec 19, 2023
- Denso Corporation
- Yuichiro Tokuda
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method for producing p-type 4H-SiC single crystal
- Patent number 11,542,631
- Issue date Jan 3, 2023
- National Institute of Advanced Industrial Science and Technology
- Kazuma Eto
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
METHODS FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL INGOT AND...
- Publication number 20230374699
- Publication date Nov 23, 2023
- DENSO CORPORATION
- Isaho KAMATA
- C30 - CRYSTAL GROWTH
Information Patent Application
REACTION CHAMBER FOR A DEPOSITION REACTOR WITH INTERSPACE AND LOWER...
- Publication number 20220074046
- Publication date Mar 10, 2022
- LPE S.P.A.
- Francesco Corea
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
REACTION CHAMBER COMPRISING A ROTATING ELEMENT FOR THE DEPOSITION O...
- Publication number 20210388492
- Publication date Dec 16, 2021
- LPE S.P.A.
- Francesco Corea
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SILICON CARBIDE SINGLE CRYSTAL WAFER, AND METHODS FOR MANUFACTURING...
- Publication number 20210108334
- Publication date Apr 15, 2021
- DENSO CORPORATION
- Isaho KAMATA
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SINGLE CRYSTAL
- Publication number 20210102311
- Publication date Apr 8, 2021
- DENSO CORPORATION
- Yuichiro TOKUDA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING P-TYPE 4H-SIC SINGLE CRYSTAL
- Publication number 20200325595
- Publication date Oct 15, 2020
- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Kazuma ETO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-TYPE 4H-SIC SINGLE CRYSTAL AND METHOD FOR PRODUCING P-TYPE 4H-SIC...
- Publication number 20180274125
- Publication date Sep 27, 2018
- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Kazuma ETO
- C30 - CRYSTAL GROWTH

Yuichiro TOKUDA

Person

Patents Grantslast 30 patents

Methods for manufacturing silicon carbide single crystal ingot and...

Silicon carbide single crystal

Method for producing p-type 4H-SiC single crystal

Patents Applicationslast 30 patents

METHODS FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL INGOT AND...

REACTION CHAMBER FOR A DEPOSITION REACTOR WITH INTERSPACE AND LOWER...

REACTION CHAMBER COMPRISING A ROTATING ELEMENT FOR THE DEPOSITION O...

SILICON CARBIDE SINGLE CRYSTAL WAFER, AND METHODS FOR MANUFACTURING...

SILICON CARBIDE SINGLE CRYSTAL

METHOD FOR PRODUCING P-TYPE 4H-SIC SINGLE CRYSTAL

P-TYPE 4H-SIC SINGLE CRYSTAL AND METHOD FOR PRODUCING P-TYPE 4H-SIC...