Yuji Kagamitani

Person

Sendai-ahi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method for producing nitride crystal and nitride crystal
- Patent number 11,162,190
- Issue date Nov 2, 2021
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka Mikawa
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method for producing nitride crystal and nitride crystal
- Patent number 10,526,726
- Issue date Jan 7, 2020
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka Mikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing nitride single crystal using nitrogen-containi...
- Patent number 10,501,865
- Issue date Dec 10, 2019
- Mitsubishi Chemical Corporation
- Tohru Ishiguro
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing nitride single crystal
- Patent number 9,976,229
- Issue date May 22, 2018
- MITSUBISHI CHEMICAL CORPORATION
- Tohru Ishiguro
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing nitride crystal and nitride crystal
- Patent number 9,518,337
- Issue date Dec 13, 2016
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka Mikawa
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Process for producing nitride crystal, nitride crystal and apparatu...
- Patent number 9,192,910
- Issue date Nov 24, 2015
- Mitsubishi Chemical Corporation
- Yutaka Mikawa
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
Information Patent Grant
Method for producing nitride crystal and nitride crystal
- Patent number 9,096,945
- Issue date Aug 4, 2015
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka Mikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Production method, production vessel and member for nitride crystal
- Patent number 8,609,059
- Issue date Dec 17, 2013
- Mitsubishi Chemical Corporation
- Yutaka Mikawa
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR PRODUCING NITRIDE CRYSTAL AND NITRIDE CRYSTAL
- Publication number 20220033992
- Publication date Feb 3, 2022
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING NITRIDE CRYSTAL AND NITRIDE CRYSTAL
- Publication number 20200109489
- Publication date Apr 9, 2020
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING NITRIDE SINGLE CRYSTAL
- Publication number 20180187328
- Publication date Jul 5, 2018
- MITSUBISHI CHEMICAL CORPORATION
- Tohru Ishiguro
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING NITRIDE CRYSTAL AND NITRIDE CRYSTAL
- Publication number 20170051434
- Publication date Feb 23, 2017
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING NITRIDE CRYSTAL AND NITRIDE CRYSTAL
- Publication number 20150247256
- Publication date Sep 3, 2015
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING NITRIDE SINGLE CRYSTAL
- Publication number 20150023862
- Publication date Jan 22, 2015
- MITSUBISHI CHEMICAL CORPORATION
- Toru ISHIGURO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING NITRIDE CRYSTAL AND NITRIDE CRYSTAL
- Publication number 20130108537
- Publication date May 2, 2013
- Yutaka MIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION METHOD, PRODUCTION VESSEL AND MEMBER FOR NITRIDE CRYSTAL
- Publication number 20120237431
- Publication date Sep 20, 2012
- MITSUBISHI CHEMICAL CORPORATION
- YUTAKA MIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR PRODUCING NITRIDE CRYSTAL, NITRIDE CRYSTAL AND APPARATU...
- Publication number 20110268645
- Publication date Nov 3, 2011
- TOHOKU UNIVERSITY
- Yutaka Mikawa
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR, CRYSTAL GROWTH RATE INC...
- Publication number 20100104495
- Publication date Apr 29, 2010
- MITSUBISHI CHEMICAL CORPORATION
- Shinichiro Kawabata
- C30 - CRYSTAL GROWTH
Information Patent Application
SELF-COATED SINGLE CRYSTAL, AND PRODUCTION APPARATUS AND PROCESS TH...
- Publication number 20090165702
- Publication date Jul 2, 2009
- FUKUDA CRYSTAL LABORATORY
- Tsuguo FUKUDA
- C30 - CRYSTAL GROWTH
Information Patent Application
CRYSTAL PRODUCTION PROCESS USING SUPERCRITICAL SOLVENT, CRYSTAL GRO...
- Publication number 20090092536
- Publication date Apr 9, 2009
- TOHOKU UNIVERSITY
- Shinichiro Kawabata
- C30 - CRYSTAL GROWTH
Information Patent Application
Self-Coated Single Crystal, And Production Apparatus And Process Th...
- Publication number 20080008438
- Publication date Jan 10, 2008
- TOHOKU TECHNO ARCH CO., LTD.
- Tsuguo Fukuda
- C30 - CRYSTAL GROWTH

Yuji Kagamitani

Person

Patents Grantslast 30 patents

Method for producing nitride crystal and nitride crystal

Method for producing nitride crystal and nitride crystal

Method for producing nitride single crystal using nitrogen-containi...

Method for producing nitride single crystal

Method for producing nitride crystal and nitride crystal

Process for producing nitride crystal, nitride crystal and apparatu...

Method for producing nitride crystal and nitride crystal

Production method, production vessel and member for nitride crystal

Patents Applicationslast 30 patents

METHOD FOR PRODUCING NITRIDE CRYSTAL AND NITRIDE CRYSTAL

METHOD FOR PRODUCING NITRIDE CRYSTAL AND NITRIDE CRYSTAL

METHOD FOR PRODUCING NITRIDE SINGLE CRYSTAL

METHOD FOR PRODUCING NITRIDE CRYSTAL AND NITRIDE CRYSTAL

METHOD FOR PRODUCING NITRIDE CRYSTAL AND NITRIDE CRYSTAL

METHOD FOR PRODUCING NITRIDE SINGLE CRYSTAL

METHOD FOR PRODUCING NITRIDE CRYSTAL AND NITRIDE CRYSTAL

PRODUCTION METHOD, PRODUCTION VESSEL AND MEMBER FOR NITRIDE CRYSTAL

PROCESS FOR PRODUCING NITRIDE CRYSTAL, NITRIDE CRYSTAL AND APPARATU...

METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR, CRYSTAL GROWTH RATE INC...

SELF-COATED SINGLE CRYSTAL, AND PRODUCTION APPARATUS AND PROCESS TH...

CRYSTAL PRODUCTION PROCESS USING SUPERCRITICAL SOLVENT, CRYSTAL GRO...

Self-Coated Single Crystal, And Production Apparatus And Process Th...