Yujie Ai

Person

Beijing, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Method for fabricating silicon nanowire field effect transistor bas...
- Patent number 9,034,702
- Issue date May 19, 2015
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with a vertical channel and fabrication met...
- Patent number 8,901,644
- Issue date Dec 2, 2014
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heat dissipation structure of SOI field effect transistor
- Patent number 8,598,636
- Issue date Dec 3, 2013
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method of vertical silicon nanowire field effect transi...
- Patent number 8,592,276
- Issue date Nov 26, 2013
- Peking University
- Ru Huang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
High voltage-resistant lateral double-diffused transistor based on...
- Patent number 8,564,031
- Issue date Oct 22, 2013
- Peking University
- Ru Huang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for fabricating surrounding-gate silicon nanowire transistor...
- Patent number 8,563,370
- Issue date Oct 22, 2013
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method for surrounding gate silicon nanowire transistor...
- Patent number 8,513,067
- Issue date Aug 20, 2013
- Peking University
- Ru Huang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for fabricating a tunneling field-effect transistor
- Patent number 8,288,238
- Issue date Oct 16, 2012
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FIELD EFFECT TRANSISTOR WITH A VERTICAL CHANNEL AND FABRICATION MET...
- Publication number 20130168759
- Publication date Jul 4, 2013
- Peking University
- Ru Huang
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD FOR FABRICATING ULTRA-FINE NANOWIRE
- Publication number 20130130503
- Publication date May 23, 2013
- Peking University
- Ru Huang
- B82 - NANO-TECHNOLOGY
Information Patent Application
Strained Channel Field Effect Transistor and the Method for Fabrica...
- Publication number 20130043515
- Publication date Feb 21, 2013
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION METHOD FOR SURROUNDING GATE SILICON NANOWIRE TRANSISTOR...
- Publication number 20130017654
- Publication date Jan 17, 2013
- Ru Huang
- B82 - NANO-TECHNOLOGY
Information Patent Application
FABRICATION METHOD OF VERTICAL SILICON NANOWIRE FIELD EFFECT TRANSI...
- Publication number 20130011980
- Publication date Jan 10, 2013
- Ru Huang
- B82 - NANO-TECHNOLOGY
Information Patent Application
Heat Dissipation Structure of SOI Field Effect Transistor
- Publication number 20130001655
- Publication date Jan 3, 2013
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING SURROUNDING-GATE SILICON NANOWIRE TRANSISTOR...
- Publication number 20120302014
- Publication date Nov 29, 2012
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Fabricating Silicon Nanowire Field Effect Transistor Bas...
- Publication number 20120302027
- Publication date Nov 29, 2012
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING FINE LINE
- Publication number 20120238097
- Publication date Sep 20, 2012
- Peking University
- Ru Huang
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD FOR FABRICATING A TUNNELING FIELD-EFFECT TRANSISTOR
- Publication number 20120115297
- Publication date May 10, 2012
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Method for fabricating silicon nanowire field effect transistor bas...

Field effect transistor with a vertical channel and fabrication met...

Heat dissipation structure of SOI field effect transistor

Fabrication method of vertical silicon nanowire field effect transi...

High voltage-resistant lateral double-diffused transistor based on...

Method for fabricating surrounding-gate silicon nanowire transistor...

Fabrication method for surrounding gate silicon nanowire transistor...

Method for fabricating a tunneling field-effect transistor

Patents Applicationslast 30 patents

FIELD EFFECT TRANSISTOR WITH A VERTICAL CHANNEL AND FABRICATION MET...

METHOD FOR FABRICATING ULTRA-FINE NANOWIRE

Strained Channel Field Effect Transistor and the Method for Fabrica...

FABRICATION METHOD FOR SURROUNDING GATE SILICON NANOWIRE TRANSISTOR...

FABRICATION METHOD OF VERTICAL SILICON NANOWIRE FIELD EFFECT TRANSI...

Heat Dissipation Structure of SOI Field Effect Transistor

METHOD FOR FABRICATING SURROUNDING-GATE SILICON NANOWIRE TRANSISTOR...

Method for Fabricating Silicon Nanowire Field Effect Transistor Bas...

METHOD FOR FABRICATING FINE LINE

METHOD FOR FABRICATING A TUNNELING FIELD-EFFECT TRANSISTOR