Yujing Wu

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Chandler, AZ, US

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Patents Grantslast 30 patents

Information Patent Grant
LDMOS with an improved breakdown performance
- Patent number 11,610,978
- Issue date Mar 21, 2023
- NXP B.V.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus for extension of operation voltage
- Patent number 11,404,539
- Issue date Aug 2, 2022
- NXP USA, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor bidirectional switching device
- Patent number 6,943,408
- Issue date Sep 13, 2005
- Semiconductor Components Industries, LLC
- Yujing Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor bidirectional switching device and method
- Patent number 6,781,195
- Issue date Aug 24, 2004
- Semiconductor Components Industries, LLC
- Yujing Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a semiconductor device with a low permittivity region
- Patent number 6,531,376
- Issue date Mar 11, 2003
- Semiconductor Components Industries LLC
- Weizhong Cai
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LDMOS With An Improved Breakdown Performance
- Publication number 20220293771
- Publication date Sep 15, 2022
- NXP B.V.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Apparatus for Extension of Operation Voltage
- Publication number 20220069077
- Publication date Mar 3, 2022
- NXP USA, Inc.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor switching device and method
- Publication number 20040207027
- Publication date Oct 21, 2004
- Yujing Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor switching device and method
- Publication number 20020096709
- Publication date Jul 25, 2002
- Semiconductor Components Industries, LLC.
- Yujing Wu
- H01 - BASIC ELECTRIC ELEMENTS