Yukari Tani

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Nagoya-shi, JP

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Patents Grantslast 30 patents

Information Patent Grant
Method of producing silicon carbide semiconductor substrate, silico...
- Patent number 8,338,833
- Issue date Dec 25, 2012
- Toyota Jidosha Kabushiki Kaisha
- Akinori Seki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method for manufacturing t...
- Patent number 8,053,784
- Issue date Nov 8, 2011
- Toyota Jidosha Kabushiki Kaisha
- Akinori Seki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming epitaxial SiC using XPS characterization
- Patent number 7,678,671
- Issue date Mar 16, 2010
- Toyota Jidosha Kabushiki Kaisha
- Akinori Seki
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING T...
- Publication number 20100224884
- Publication date Sep 9, 2010
- Akinori Seki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor material, production method thereof and semiconductor...
- Publication number 20070096109
- Publication date May 3, 2007
- Toyota Jidosha Kabushiki Kaisha
- Akinori Seki
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of producing silicon carbide semiconductor substrate, silico...
- Publication number 20070032053
- Publication date Feb 8, 2007
- Toyota Jidosha Kabushiki Kaisha
- Akinori Seki
- H01 - BASIC ELECTRIC ELEMENTS