Yukihiro SAKOTSUBO

Person

Yokkaichi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Three-dimensional memory device with plural channels per memory ope...
- Patent number 11,903,190
- Issue date Feb 13, 2024
- SanDisk Technologies LLC
- Yukihiro Sakotsubo
Information Patent Grant
Three-dimensional memory device including bump-containing bit lines...
- Patent number 11,355,437
- Issue date Jun 7, 2022
- SanDisk Technologies LLC
- Zhixin Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NAND string containing separate hole and electron tunneling dielect...
- Patent number 10,892,279
- Issue date Jan 12, 2021
- SanDisk Technologies LLC
- Yukihiro Sakotsubo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric non-volatile memory
- Patent number 10,734,408
- Issue date Aug 4, 2020
- SanDisk Technologies LLC
- Yingda Dong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric non-volatile memory
- Patent number 10,461,095
- Issue date Oct 29, 2019
- SanDisk Technologies LLC
- Yingda Dong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric non-volatile memory
- Patent number 10,453,862
- Issue date Oct 22, 2019
- SanDisk Technologies LLC
- Yingda Dong
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric non-volatile memory
- Patent number 10,453,861
- Issue date Oct 22, 2019
- SanDisk Technologies LLC
- Yingda Dong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory device containing oxygen-scavenging material po...
- Patent number 9,812,505
- Issue date Nov 7, 2017
- SanDisk Technologies LLC
- Yukihiro Sakotsubo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fully isolated selector for memory device
- Patent number 9,437,658
- Issue date Sep 6, 2016
- SanDisk Technologies LLC
- Yukihiro Sakotsubo
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH PLURAL CHANNELS PER MEMORY OPE...
- Publication number 20220189981
- Publication date Jun 16, 2022
- SANDISK TECHNOLOGIES LLC
- Yukihiro SAKOTSUBO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING BUMP-CONTAINING BIT LINES...
- Publication number 20220045005
- Publication date Feb 10, 2022
- SANDISK TECHNOLOGIES LLC
- Zhixin CUI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NAND STRING CONTAINING SEPARATE HOLE AND ELECTRON TUNNELING DIELECT...
- Publication number 20210020651
- Publication date Jan 21, 2021
- SANDISK TECHNOLOGIES LLC
- Yukihiro SAKOTSUBO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC NON-VOLATILE MEMORY
- Publication number 20200020704
- Publication date Jan 16, 2020
- SANDISK TECHNOLOGIES LLC
- Yingda Dong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC NON-VOLATILE MEMORY
- Publication number 20190304988
- Publication date Oct 3, 2019
- SanDisk Technologies LLC
- Yingda Dong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC NON-VOLATILE MEMORY
- Publication number 20190304986
- Publication date Oct 3, 2019
- SanDisk Technologies LLC
- Yingda Dong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC NON-VOLATILE MEMORY
- Publication number 20190304987
- Publication date Oct 3, 2019
- SanDisk Technologies LLC
- Yingda Dong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY DEVICE CONTAINING OXYGEN-SCAVENGING MATERIAL PO...
- Publication number 20170141161
- Publication date May 18, 2017
- SanDisk Technologies LLC
- Yukihiro SAKOTSUBO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FULLY ISOLATED SELECTOR FOR MEMORY DEVICE
- Publication number 20160043143
- Publication date Feb 11, 2016
- SanDisk 3D LLC
- Yukihiro SAKOTSUBO
- H01 - BASIC ELECTRIC ELEMENTS

Yukihiro SAKOTSUBO

Person

Patents Grantslast 30 patents

Three-dimensional memory device with plural channels per memory ope...

Three-dimensional memory device including bump-containing bit lines...

NAND string containing separate hole and electron tunneling dielect...

Ferroelectric non-volatile memory

Ferroelectric non-volatile memory

Ferroelectric non-volatile memory

Ferroelectric non-volatile memory

Non-volatile memory device containing oxygen-scavenging material po...

Fully isolated selector for memory device

Patents Applicationslast 30 patents

THREE-DIMENSIONAL MEMORY DEVICE WITH PLURAL CHANNELS PER MEMORY OPE...

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING BUMP-CONTAINING BIT LINES...

NAND STRING CONTAINING SEPARATE HOLE AND ELECTRON TUNNELING DIELECT...

FERROELECTRIC NON-VOLATILE MEMORY

FERROELECTRIC NON-VOLATILE MEMORY

FERROELECTRIC NON-VOLATILE MEMORY

FERROELECTRIC NON-VOLATILE MEMORY

NON-VOLATILE MEMORY DEVICE CONTAINING OXYGEN-SCAVENGING MATERIAL PO...

FULLY ISOLATED SELECTOR FOR MEMORY DEVICE