Yukimune WATANABE

Person

Chino, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Single crystal substrate with undulating ridges and silicon carbide...
- Patent number 11,404,269
- Issue date Aug 2, 2022
- Seiko Epson Corporation
- Yukimune Watanabe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing single crystal substrate having a plurality of...
- Patent number 11,142,821
- Issue date Oct 12, 2021
- Seiko Epson Corporation
- Yukimune Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide substrate and method for producing silicon carbide...
- Patent number 9,882,010
- Issue date Jan 30, 2018
- Seiko Epson Corporation
- Yukimune Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing 3C-SiC epitaxial layer, 3C-SiC epitaxial subst...
- Patent number 9,758,902
- Issue date Sep 12, 2017
- Seiko Epson Corporation
- Yukimune Watanabe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of forming a laminate of epitaxially grown cubic silicon car...
- Patent number 9,732,439
- Issue date Aug 15, 2017
- Seiko Epson Corporation
- Yukimune Watanabe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Substrate with silicon carbide film, semiconductor device, and meth...
- Patent number 9,536,954
- Issue date Jan 3, 2017
- Seiko Epson Corporation
- Yukimune Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate with silicon carbide film, method for producing substrate...
- Patent number 9,362,368
- Issue date Jun 7, 2016
- Seiko Epson Corporation
- Yukimune Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device and semiconductor devi...
- Patent number 9,064,802
- Issue date Jun 23, 2015
- Seiko Epson Corporation
- Yukimune Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate and method for producing semiconductor subs...
- Patent number 8,986,464
- Issue date Mar 24, 2015
- Seiko Epson Corporation
- Yukimune Watanabe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor substrate and semiconductor substrate manufacturing m...
- Patent number 8,847,236
- Issue date Sep 30, 2014
- Seiko Epson Corporation
- Yukimune Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of the semiconductor...
- Patent number 7,968,396
- Issue date Jun 28, 2011
- Seiko Epson Corporation
- Yukimune Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of nickel disilicide formation and method of nickel disilica...
- Patent number 7,947,560
- Issue date May 24, 2011
- Seiko Epson Corporation
- Yukimune Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device that includes forming...
- Patent number 7,713,884
- Issue date May 11, 2010
- Renesas Technology Corp.
- Hiromi Ito
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device and manufacturing method of the semiconductor...
- Patent number 7,645,655
- Issue date Jan 12, 2010
- Seiko Epson Corporation
- Yukimune Watanabe
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Single Crystal Substrate, Method For Producing Single Crystal Subst...
- Publication number 20200140998
- Publication date May 7, 2020
- SEIKO EPSON CORPORATION
- Yukimune WATANABE
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Single Crystal Substrate And Silicon Carbide Substrate
- Publication number 20200135461
- Publication date Apr 30, 2020
- SEIKO EPSON CORPORATION
- Yukimune WATANABE
- C30 - CRYSTAL GROWTH
Information Patent Application
PHOTOELECTRIC CONVERSION ELEMENT, PHOTOELECTRIC CONVERSION MODULE,...
- Publication number 20190280141
- Publication date Sep 12, 2019
- SEIKO EPSON CORPORATION
- Masahiro TAKEUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SUBSTRATE AND METHOD FOR PRODUCING SILICON CARBIDE...
- Publication number 20160343570
- Publication date Nov 24, 2016
- SEIKO EPSON CORPORATION
- Yukimune WATANABE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE WITH SILICON CARBIDE FILM, METHOD FOR PRODUCING SUBSTRATE...
- Publication number 20160126321
- Publication date May 5, 2016
- SEIKO EPSON CORPORATION
- Yukimune WATANABE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE WITH SILICON CARBIDE FILM, SEMICONDUCTOR DEVICE, AND METH...
- Publication number 20160126320
- Publication date May 5, 2016
- SEIKO EPSON CORPORATION
- Yukimune WATANABE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CUBIC SILICON CARBIDE FILM MANUFACTURING METHOD, CUBIC SILICON CARB...
- Publication number 20150275394
- Publication date Oct 1, 2015
- SEIKO EPSON CORPORATION
- Yukimune WATANABE
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING 3C-SIC EPITAXIAL LAYER, 3C-SIC EPITAXIAL SUBST...
- Publication number 20150108504
- Publication date Apr 23, 2015
- SEIKO EPSON CORPORATION
- Yukimune WATANABE
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR SUBSTRATE MANUFACTURING M...
- Publication number 20130181230
- Publication date Jul 18, 2013
- SEIKO EPSON CORPORATION
- Yukimune WATANABE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING SEMICONDUCTOR SUBS...
- Publication number 20120235163
- Publication date Sep 20, 2012
- SEIKO EPSON CORPORATION
- Yukimune WATANABE
- C30 - CRYSTAL GROWTH
Information Patent Application
CUBIC SILICON CARBIDE FILM MANUFACTURING METHOD, AND CUBIC SILICON...
- Publication number 20120037067
- Publication date Feb 16, 2012
- SEIKO EPSON CORPORATION
- Yukimune WATANABE
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor device and manufacturing method of the semiconductor...
- Publication number 20100072551
- Publication date Mar 25, 2010
- SEIKO EPSON CORPORATION
- Yukimune Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20080318439
- Publication date Dec 25, 2008
- RENESAS TECHNOLOGY CORP.
- Hiromi Ito
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
- Publication number 20080303119
- Publication date Dec 11, 2008
- SEIKO EPSON CORPORATION
- Yukimune WATANABE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacturing method of the same
- Publication number 20080067590
- Publication date Mar 20, 2008
- RENESAS TECHNOLOGY CORP.
- Nobuyuki Mise
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming silicide and method for fabricating semiconducto...
- Publication number 20070202692
- Publication date Aug 30, 2007
- SEIKO EPSON CORPORATION
- Yukimune Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacturing method of the semiconductor...
- Publication number 20060284220
- Publication date Dec 21, 2006
- SEIKO EPSON CORPORATION
- Yukimune Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacturing method of the semiconductor...
- Publication number 20060281273
- Publication date Dec 14, 2006
- SEIKO EPSON CORPORATION
- Yukimune Watanabe
- H01 - BASIC ELECTRIC ELEMENTS

Yukimune WATANABE

Person

Patents Grantslast 30 patents

Single crystal substrate with undulating ridges and silicon carbide...

Method for producing single crystal substrate having a plurality of...

Silicon carbide substrate and method for producing silicon carbide...

Method for producing 3C-SiC epitaxial layer, 3C-SiC epitaxial subst...

Method of forming a laminate of epitaxially grown cubic silicon car...

Substrate with silicon carbide film, semiconductor device, and meth...

Substrate with silicon carbide film, method for producing substrate...

Method of manufacturing semiconductor device and semiconductor devi...

Semiconductor substrate and method for producing semiconductor subs...

Semiconductor substrate and semiconductor substrate manufacturing m...

Semiconductor device and manufacturing method of the semiconductor...

Method of nickel disilicide formation and method of nickel disilica...

Method of manufacturing semiconductor device that includes forming...

Semiconductor device and manufacturing method of the semiconductor...

Patents Applicationslast 30 patents

Single Crystal Substrate, Method For Producing Single Crystal Subst...

Single Crystal Substrate And Silicon Carbide Substrate

PHOTOELECTRIC CONVERSION ELEMENT, PHOTOELECTRIC CONVERSION MODULE,...

SILICON CARBIDE SUBSTRATE AND METHOD FOR PRODUCING SILICON CARBIDE...

SUBSTRATE WITH SILICON CARBIDE FILM, METHOD FOR PRODUCING SUBSTRATE...

SUBSTRATE WITH SILICON CARBIDE FILM, SEMICONDUCTOR DEVICE, AND METH...

CUBIC SILICON CARBIDE FILM MANUFACTURING METHOD, CUBIC SILICON CARB...

METHOD FOR PRODUCING 3C-SIC EPITAXIAL LAYER, 3C-SIC EPITAXIAL SUBST...

SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR SUBSTRATE MANUFACTURING M...

SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING SEMICONDUCTOR SUBS...

CUBIC SILICON CARBIDE FILM MANUFACTURING METHOD, AND CUBIC SILICON...

Semiconductor device and manufacturing method of the semiconductor...

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

Semiconductor device and manufacturing method of the same

Method for forming silicide and method for fabricating semiconducto...

Semiconductor device and manufacturing method of the semiconductor...

Semiconductor device and manufacturing method of the semiconductor...