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Yukio Terashima
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Shizuoka-ken, JP
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Patents Grants
last 30 patents
Information
Patent Grant
Method for growing silicon carbide single crystal
Patent number
8,702,864
Issue date
Apr 22, 2014
Toyota Jidosha Kabushiki Kaisha
Yukio Terashima
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method for growing silicon carbide single crystal
Patent number
8,685,163
Issue date
Apr 1, 2014
Toyota Jidosha Kabushiki Kaisha
Yukio Terashima
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method for growing silicon carbide single crystal
Patent number
8,287,644
Issue date
Oct 16, 2012
Toyota Jidosha Kabushiki Kaisha
Yukio Terashima
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method for producing p-type SiC semiconductor single crystal
Patent number
8,123,857
Issue date
Feb 28, 2012
Toyota Jidosha Kabushiki Kaisha
Yukio Terashima
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method of manufacturing a silicon carbide single crystal
Patent number
8,118,933
Issue date
Feb 21, 2012
Toyota Jidosha Kabushiki Kaisha
Hidemitsu Sakamoto
C30 - CRYSTAL GROWTH
Patents Applications
last 30 patents
Information
Patent Application
METHOD FOR GROWING SILICON CARBIDE SINGLE CRYSTAL
Publication number
20100288188
Publication date
Nov 18, 2010
Yukio Terashima
C30 - CRYSTAL GROWTH
Information
Patent Application
METHOD FOR GROWING SILICON CARBIDE SINGLE CRYSTAL
Publication number
20100288187
Publication date
Nov 18, 2010
Yukio Terashima
C30 - CRYSTAL GROWTH
Information
Patent Application
METHOD FOR GROWING SILICON CARBIDE SINGLE CRYSTAL
Publication number
20100236472
Publication date
Sep 23, 2010
Yukio Terashima
C30 - CRYSTAL GROWTH
Information
Patent Application
METHOD FOR PRODUCING p-TYPE SiC SEMICONDUCTOR SINGLE CRYSTAL
Publication number
20090194017
Publication date
Aug 6, 2009
Yukio TERASHIMA
C30 - CRYSTAL GROWTH
Information
Patent Application
METHOD OF MANUFACTURING A SILICON CARBIDE SINGLE CRYSTAL
Publication number
20090178610
Publication date
Jul 16, 2009
Hidemitsu Sakamoto
C30 - CRYSTAL GROWTH