Yun Shi

Person

San Diego, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Transistors for radio-frequency circuits and devices
- Patent number 12,191,353
- Issue date Jan 7, 2025
- Skyworks Solutions, Inc.
- Yun Shi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with schottky barriers
- Patent number 11,862,725
- Issue date Jan 2, 2024
- Skyworks Solutions, Inc.
- Yun Shi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cascode amplifier optimization
- Patent number 11,742,408
- Issue date Aug 29, 2023
- Skyworks Solutions, Inc.
- Yun Shi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors having reduced parasitics and enhanced performance
- Patent number 11,705,487
- Issue date Jul 18, 2023
- Yun Shi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Switch with integrated Schottky barrier contact
- Patent number 11,417,762
- Issue date Aug 16, 2022
- Skyworks Solutions, Inc.
- Yun Shi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cascode amplifier optimization
- Patent number 10,886,382
- Issue date Jan 5, 2021
- Skyworks Solutions, Inc.
- Yun Shi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tapered gate oxide in LDMOS devices
- Patent number 10,050,115
- Issue date Aug 14, 2018
- GLOBALFOUNDRIES Inc.
- Brennan J. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor and method of manufacture
- Patent number 9,847,415
- Issue date Dec 19, 2017
- GLOBALFOUNDRIES Inc.
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with a dopant implant region having a linea...
- Patent number 9,799,652
- Issue date Oct 24, 2017
- GLOBALFOUNDRIES Inc.
- Natalie B. Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures with isolated ohmic trenches and stand-alo...
- Patent number 9,786,606
- Issue date Oct 10, 2017
- GLOBALFOUNDRIES Inc.
- Natalie B. Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with a dopant implant region having a linea...
- Patent number 9,768,028
- Issue date Sep 19, 2017
- GLOBALFOUNDRIES Inc.
- Natalie B. Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual shallow trench isolation (STI) structure for field effect tran...
- Patent number 9,595,579
- Issue date Mar 14, 2017
- GLOBALFOUNDRIES Inc.
- Natalie B. Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage metal-insulator-semiconductor field effect transistor...
- Patent number 9,356,014
- Issue date May 31, 2016
- GLOBALFOUNDRIES Inc.
- William F. Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low leakage, high frequency devices
- Patent number 9,337,310
- Issue date May 10, 2016
- GLOBALFOUNDRIES Inc.
- Theodore J. Letavic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures with isolated ohmic trenches and stand-alo...
- Patent number 9,324,632
- Issue date Apr 26, 2016
- GLOBALFOUNDRIES Inc.
- Natalie B. Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage laterally diffused metal oxide semiconductor
- Patent number 9,240,463
- Issue date Jan 19, 2016
- GLOBALFOUNDRIES Inc.
- John J. Ellis-Monaghan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage laterally diffused metal oxide semiconductor
- Patent number 9,236,449
- Issue date Jan 12, 2016
- GLOBALFOUNDRIES Inc.
- John J. Ellis-Monaghan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral double-diffused metal oxide semiconductor field effect tran...
- Patent number 9,224,858
- Issue date Dec 29, 2015
- GLOBALFOUNDRIES Inc.
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage laterally diffused metal oxide semiconductor
- Patent number 9,059,276
- Issue date Jun 16, 2015
- International Business Machines Corporation
- Natalie B. Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit including transistor structure on depleted silic...
- Patent number 9,041,105
- Issue date May 26, 2015
- International Business Machines Corporation
- William F. Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress enhanced LDMOS transistor to minimize on-resistance and main...
- Patent number 9,034,712
- Issue date May 19, 2015
- International Business Machines Corporation
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral diffusion metal oxide semiconductor (LDMOS)
- Patent number 8,981,475
- Issue date Mar 17, 2015
- International Business Machines Corporation
- Santosh Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral diffusion metal oxide semiconductor (LDMOS) device with tap...
- Patent number 8,962,402
- Issue date Feb 24, 2015
- International Business Machines Corporation
- Santosh Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon controlled rectifier with stress-enhanced adjustable trigge...
- Patent number 8,946,799
- Issue date Feb 3, 2015
- International Business Machines Corporation
- Renata Camillo-Castillo
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Field effect transistor and method of manufacture
- Patent number 8,921,190
- Issue date Dec 30, 2014
- International Business Machines Corporation
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI radio frequency switch with enhanced signal fidelity and electr...
- Patent number 8,916,467
- Issue date Dec 23, 2014
- International Business Machines Corporation
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures and methods of manufacture
- Patent number 8,916,440
- Issue date Dec 23, 2014
- International Business Machines Corporation
- William F. Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including asymmetric lightly doped drain (LDD)...
- Patent number 8,912,597
- Issue date Dec 16, 2014
- International Business Machines Corporation
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shielding for high-voltage semiconductor-on-insulator devices
- Patent number 8,890,246
- Issue date Nov 18, 2014
- International Business Machines Corporation
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI radio frequency switch with enhanced electrical isolation
- Patent number 8,866,226
- Issue date Oct 21, 2014
- International Business Machines Corporation
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICES WITH SCHOTTKY BARRIERS
- Publication number 20240186413
- Publication date Jun 6, 2024
- Skyworks Solutions, Inc.
- Yun SHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS FOR RADIO-FREQUENCY CIRCUITS AND DEVICES
- Publication number 20240021674
- Publication date Jan 18, 2024
- Skyworks Solutions, Inc.
- Yun SHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH SCHOTTKY BARRIERS
- Publication number 20230038868
- Publication date Feb 9, 2023
- Skyworks Solutions, Inc.
- Yun SHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CASCODE AMPLIFIER OPTIMIZATION
- Publication number 20210151582
- Publication date May 20, 2021
- Skyworks Solutions, Inc.
- Yun Shi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SWITCH WITH INTEGRATED SCHOTTKY BARRIER CONTACT
- Publication number 20210013342
- Publication date Jan 14, 2021
- Skyworks Solutions, Inc.
- Yun SHI
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
TRANSISTORS HAVING REDUCED PARASITICS AND ENHANCED PERFORMANCE
- Publication number 20200357886
- Publication date Nov 12, 2020
- SKYWORKS SOLUTIONS, INC.
- Yun SHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CASCODE AMPLIFIER OPTIMIZATION
- Publication number 20180233578
- Publication date Aug 16, 2018
- SKYWORKS SOLUTIONS, INC.
- Yun Shi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TAPERED GATE OXIDE IN LDMOS DEVICES
- Publication number 20160190269
- Publication date Jun 30, 2016
- International Business Machines Corporation
- Brennan J. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES WITH ISOLATED OHMIC TRENCHES AND STAND-ALO...
- Publication number 20160190067
- Publication date Jun 30, 2016
- GLOBALFOUNDRIES INC.
- Natalie B. Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES WITH ISOLATED OHMIC TRENCHES AND STAND-ALO...
- Publication number 20150348870
- Publication date Dec 3, 2015
- International Business Machines Corporation
- Natalie B. Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW LEAKAGE, HIGH FREQUENCY DEVICES
- Publication number 20150318378
- Publication date Nov 5, 2015
- International Business Machines Corporation
- Theodore J. LETAVIC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL SHALLOW TRENCH ISOLATION (STI) FIELD EFFECT TRANSISTOR (FET) A...
- Publication number 20150255539
- Publication date Sep 10, 2015
- International Business Machines Corporation
- Natalie B. Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL DIFFUSION METAL OXIDE SEMICONDUCTOR (LDMOS) DEVICE WITH TAP...
- Publication number 20150048447
- Publication date Feb 19, 2015
- International Business Machines Corporation
- Santosh Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURE
- Publication number 20150041896
- Publication date Feb 12, 2015
- International Business Machines Corporation
- Alan B. BOTULA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES AND METHODS OF MANUFACTURE
- Publication number 20150041895
- Publication date Feb 12, 2015
- International Business Machines Corporation
- William F. CLARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR
- Publication number 20150014769
- Publication date Jan 15, 2015
- International Business Machines Corporation
- John J. ELLIS-MONAGHAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL DIFFUSION METAL OXIDE SEMICONDUCTOR (LDMOS)
- Publication number 20140367778
- Publication date Dec 18, 2014
- Santosh Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR
- Publication number 20140346597
- Publication date Nov 27, 2014
- Natalie B. Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR
- Publication number 20140346596
- Publication date Nov 27, 2014
- John J. Ellis-Monaghan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL SHALLOW TRENCH ISOLATION (STI) FIELD EFFECT TRANSISTOR (FET) A...
- Publication number 20140327084
- Publication date Nov 6, 2014
- International Business Machines Corporation
- Natalie B. Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES AND METHODS OF MANUFACTURE
- Publication number 20140035064
- Publication date Feb 6, 2014
- International Business Machines Corporation
- William F. CLARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS ENHANCED LDMOS TRANSISTOR TO MINIMIZE ON-RESISTANCE AND MAIN...
- Publication number 20140030861
- Publication date Jan 30, 2014
- International Business Machines Corporation
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT INCLUDING TRANSISTOR STRUCTURE ON DEPLETED SILIC...
- Publication number 20140021547
- Publication date Jan 23, 2014
- International Business Machines Corporation
- William F. Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Controlled Rectifier With Stress-Enhanced Adjustable Trigge...
- Publication number 20130313607
- Publication date Nov 28, 2013
- International Business Machines Corporation
- Renata Camillo-Castillo
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ISOLATED ZENER DIODE, AN INTEGRATED CIRCUIT INCORPORATING MULTIPLE...
- Publication number 20130299938
- Publication date Nov 14, 2013
- Frederick G. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING ASYMMETRIC LIGHTLY DOPED DRAIN (LDD)...
- Publication number 20130299903
- Publication date Nov 14, 2013
- International Business Machines Corporation
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BICMOS DEVICES ON ETSOI
- Publication number 20130277753
- Publication date Oct 24, 2013
- International Business Machines Corporation
- William F. Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATED ZENER DIODE
- Publication number 20130175656
- Publication date Jul 11, 2013
- International Business Machines Corporation
- Frederick G. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF ALIGNED STRUCTURES AND DESIGN STRUCTURE THEREOF
- Publication number 20130168822
- Publication date Jul 4, 2013
- International Business Machines Corporation
- William F. CLARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOBLE GAS IMPLANTATION REGION IN TOP SILICON LAYER OF SEMICONDUCTOR...
- Publication number 20130134518
- Publication date May 30, 2013
- International Business Machines Corporation
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Transistors for radio-frequency circuits and devices

Transistors with schottky barriers

Cascode amplifier optimization

Transistors having reduced parasitics and enhanced performance

Switch with integrated Schottky barrier contact

Cascode amplifier optimization

Tapered gate oxide in LDMOS devices

Field effect transistor and method of manufacture

Semiconductor structure with a dopant implant region having a linea...

Semiconductor structures with isolated ohmic trenches and stand-alo...

Semiconductor structure with a dopant implant region having a linea...

Dual shallow trench isolation (STI) structure for field effect tran...

High-voltage metal-insulator-semiconductor field effect transistor...

Low leakage, high frequency devices

Semiconductor structures with isolated ohmic trenches and stand-alo...

High voltage laterally diffused metal oxide semiconductor

High voltage laterally diffused metal oxide semiconductor

Lateral double-diffused metal oxide semiconductor field effect tran...

High voltage laterally diffused metal oxide semiconductor

Integrated circuit including transistor structure on depleted silic...

Stress enhanced LDMOS transistor to minimize on-resistance and main...

Lateral diffusion metal oxide semiconductor (LDMOS)

Lateral diffusion metal oxide semiconductor (LDMOS) device with tap...

Silicon controlled rectifier with stress-enhanced adjustable trigge...

Field effect transistor and method of manufacture

SOI radio frequency switch with enhanced signal fidelity and electr...

Semiconductor structures and methods of manufacture

Semiconductor device including asymmetric lightly doped drain (LDD)...

Shielding for high-voltage semiconductor-on-insulator devices

SOI radio frequency switch with enhanced electrical isolation

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICES WITH SCHOTTKY BARRIERS

TRANSISTORS FOR RADIO-FREQUENCY CIRCUITS AND DEVICES

TRANSISTORS WITH SCHOTTKY BARRIERS

CASCODE AMPLIFIER OPTIMIZATION

SWITCH WITH INTEGRATED SCHOTTKY BARRIER CONTACT

TRANSISTORS HAVING REDUCED PARASITICS AND ENHANCED PERFORMANCE

CASCODE AMPLIFIER OPTIMIZATION

TAPERED GATE OXIDE IN LDMOS DEVICES

SEMICONDUCTOR STRUCTURES WITH ISOLATED OHMIC TRENCHES AND STAND-ALO...

SEMICONDUCTOR STRUCTURES WITH ISOLATED OHMIC TRENCHES AND STAND-ALO...

LOW LEAKAGE, HIGH FREQUENCY DEVICES

DUAL SHALLOW TRENCH ISOLATION (STI) FIELD EFFECT TRANSISTOR (FET) A...

LATERAL DIFFUSION METAL OXIDE SEMICONDUCTOR (LDMOS) DEVICE WITH TAP...

FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURE

SEMICONDUCTOR STRUCTURES AND METHODS OF MANUFACTURE

HIGH VOLTAGE LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR

LATERAL DIFFUSION METAL OXIDE SEMICONDUCTOR (LDMOS)

HIGH VOLTAGE LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR

HIGH VOLTAGE LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR

DUAL SHALLOW TRENCH ISOLATION (STI) FIELD EFFECT TRANSISTOR (FET) A...

SEMICONDUCTOR STRUCTURES AND METHODS OF MANUFACTURE

STRESS ENHANCED LDMOS TRANSISTOR TO MINIMIZE ON-RESISTANCE AND MAIN...

INTEGRATED CIRCUIT INCLUDING TRANSISTOR STRUCTURE ON DEPLETED SILIC...

Silicon Controlled Rectifier With Stress-Enhanced Adjustable Trigge...

ISOLATED ZENER DIODE, AN INTEGRATED CIRCUIT INCORPORATING MULTIPLE...

SEMICONDUCTOR DEVICE INCLUDING ASYMMETRIC LIGHTLY DOPED DRAIN (LDD)...

BICMOS DEVICES ON ETSOI

ISOLATED ZENER DIODE

SELF ALIGNED STRUCTURES AND DESIGN STRUCTURE THEREOF

NOBLE GAS IMPLANTATION REGION IN TOP SILICON LAYER OF SEMICONDUCTOR...