Yunpeng Yin

Person

Armonk, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Self-aligned contact process enabled by low temperature
- Patent number 10,566,454
- Issue date Feb 18, 2020
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with merge-free fins
- Patent number 10,529,858
- Issue date Jan 7, 2020
- GLOBALFOUNDRIES Inc.
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin formation in fin field effect transistors
- Patent number 10,340,368
- Issue date Jul 2, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin density control of multigate devices through sidewall image tra...
- Patent number 10,170,327
- Issue date Jan 1, 2019
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk fin formation with vertical fin sidewall profile
- Patent number 10,170,471
- Issue date Jan 1, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Work function metal fill for replacement gate fin field effect tran...
- Patent number 10,164,060
- Issue date Dec 25, 2018
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Work function metal fill for replacement gate fin field effect tran...
- Patent number 10,147,803
- Issue date Dec 4, 2018
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin formation in fin field effect transistors
- Patent number 10,141,428
- Issue date Nov 27, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned contact process enabled by low temperature
- Patent number 10,037,944
- Issue date Jul 31, 2018
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming FinFETs having epitaxial Si S/D extensions with...
- Patent number 10,020,303
- Issue date Jul 10, 2018
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-lithographic line pattern formation
- Patent number 9,997,367
- Issue date Jun 12, 2018
- International Business Machines Corporation
- Chiahsun Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFETs with non-merged epitaxial S/D extensions on a seed layer an...
- Patent number 9,991,255
- Issue date Jun 5, 2018
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFETs with non-merged epitaxial S/D extensions having a SiGe seed...
- Patent number 9,991,258
- Issue date Jun 5, 2018
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET semiconductor device having integrated SiGe fin
- Patent number 9,985,030
- Issue date May 29, 2018
- International Business Machines Corporation
- Kangguo Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Critical dimension shrink through selective metal growth on metal h...
- Patent number 9,953,916
- Issue date Apr 24, 2018
- International Business Machines Corporation
- Hsueh-Chung H. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure of forming FinFET electrical fuse structure
- Patent number 9,768,276
- Issue date Sep 19, 2017
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Densely spaced fins for semiconductor fin field effect transistors
- Patent number 9,728,534
- Issue date Aug 8, 2017
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin density control of multigate devices through sidewall image tra...
- Patent number 9,728,419
- Issue date Aug 8, 2017
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin formation in fin field effect transistors
- Patent number 9,728,625
- Issue date Aug 8, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Critical dimension shrink through selective metal growth on metal h...
- Patent number 9,716,038
- Issue date Jul 25, 2017
- International Business Machines Corporation
- Hsueh-Chung H. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure of forming FinFET electrical fuse structure
- Patent number 9,647,092
- Issue date May 9, 2017
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partially isolated fin-shaped field effect transistors
- Patent number 9,634,000
- Issue date Apr 25, 2017
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned contact process enabled by low temperature
- Patent number 9,634,117
- Issue date Apr 25, 2017
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stop layer through ion implantation for etch stop
- Patent number 9,627,263
- Issue date Apr 18, 2017
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Critical dimension shrink through selective metal growth on metal h...
- Patent number 9,595,473
- Issue date Mar 14, 2017
- International Business Machines Corporation
- Hsueh-Chung H. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure integration scheme for fin field effect transistors
- Patent number 9,583,585
- Issue date Feb 28, 2017
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra-thin metal wires formed through selective deposition
- Patent number 9,558,999
- Issue date Jan 31, 2017
- GLOBALFOUNDRIES Inc.
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-K spacer for RMG finFET formation
- Patent number 9,543,407
- Issue date Jan 10, 2017
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk fin formation with vertical fin sidewall profile
- Patent number 9,515,089
- Issue date Dec 6, 2016
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Densely spaced fins for semiconductor fin field effect transistors
- Patent number 9,508,713
- Issue date Nov 29, 2016
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
STOPLAYER
- Publication number 20190206864
- Publication date Jul 4, 2019
- International Business Machines Corporation
- Hong HE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FORMATION IN FIN FIELD EFFECT TRANSISTORS
- Publication number 20190019883
- Publication date Jan 17, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED CONTACT PROCESS ENABLED BY LOW TEMPERATURE
- Publication number 20180331039
- Publication date Nov 15, 2018
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CRITICAL DIMENSION SHRINK THROUGH SELECTIVE METAL GROWTH ON METAL H...
- Publication number 20180223522
- Publication date Aug 9, 2018
- International Business Machines Corporation
- Hsueh-Chung H. Chen
- F24 - HEATING RANGES VENTILATING
Information Patent Application
FINFET WITH MERGE-FREE FINS
- Publication number 20180197980
- Publication date Jul 12, 2018
- GLOBALFOUNDRIES INC.
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN DENSITY CONTROL OF MULTIGATE DEVICES THROUGH SIDEWALL IMAGE TRA...
- Publication number 20170271167
- Publication date Sep 21, 2017
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FORMATION IN FIN FIELD EFFECT TRANSISTORS
- Publication number 20170194463
- Publication date Jul 6, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW TEMPERATURE SELECTIVE DEPOSITION EMPLOYING A GERMANIUM-CONTAINI...
- Publication number 20170194138
- Publication date Jul 6, 2017
- International Business Machines Corporation
- Paul D. Brabant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR SiGe FIN FORMATION IN A SEMICONDUCTOR DEVICE
- Publication number 20170186747
- Publication date Jun 29, 2017
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CRITICAL DIMENSION SHRINK THROUGH SELECTIVE METAL GROWTH ON METAL H...
- Publication number 20170148730
- Publication date May 25, 2017
- International Business Machines Corporation
- Hsueh-Chung H. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stop Layer Through Ion Implantation For Etch Stop
- Publication number 20170148790
- Publication date May 25, 2017
- International Business Machines Corporation
- Hong HE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED CONTACT PROCESS ENABLED BY LOW TEMPERATURE
- Publication number 20170141038
- Publication date May 18, 2017
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-K SPACER FOR RMG FINFET FORMATION
- Publication number 20170040437
- Publication date Feb 9, 2017
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-MERGED EPITAXIALLY GROWN MOSFET DEVICES
- Publication number 20170033104
- Publication date Feb 2, 2017
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BULK FIN FORMATION WITH VERTICAL FIN SIDEWALL PROFILE
- Publication number 20170033103
- Publication date Feb 2, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CRITICAL DIMENSION SHRINK THROUGH SELECTIVE METAL GROWTH ON METAL H...
- Publication number 20160351448
- Publication date Dec 1, 2016
- International Business Machines Corporation
- Hsueh-Chung H. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CRITICAL DIMENSION SHRINK THROUGH SELECTIVE METAL GROWTH ON METAL H...
- Publication number 20160351447
- Publication date Dec 1, 2016
- International Business Machines Corporation
- Hsueh-Chung H. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BULK FIN FORMATION WITH VERTICAL FIN SIDEWALL PROFILE
- Publication number 20160336347
- Publication date Nov 17, 2016
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-LITHOGRAPHIC LINE PATTERN FORMATION
- Publication number 20160329214
- Publication date Nov 10, 2016
- International Business Machines Corporation
- Chiahsun Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORK FUNCTION METAL FILL FOR REPLACEMENT GATE FIN FIELD EFFECT TRAN...
- Publication number 20160329415
- Publication date Nov 10, 2016
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE OF FORMING FINFET ELECTRICAL FUSE STRUCTURE
- Publication number 20160315175
- Publication date Oct 27, 2016
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE OF FORMING FINFET ELECTRICAL FUSE STRUCTURE
- Publication number 20160315049
- Publication date Oct 27, 2016
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORK FUNCTION METAL FILL FOR REPLACEMENT GATE FIN FIELD EFFECT TRAN...
- Publication number 20160300721
- Publication date Oct 13, 2016
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED CONTACT PROCESS ENABLED BY LOW TEMPERATURE
- Publication number 20160204257
- Publication date Jul 14, 2016
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURE INTEGRATION SCHEME FOR FIN FIELD EFFECT TRANSISTORS
- Publication number 20160118302
- Publication date Apr 28, 2016
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FORMATION IN FIN FIELD EFFECT TRANSISTORS
- Publication number 20160111525
- Publication date Apr 21, 2016
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURE INTEGRATION SCHEME FOR FIN FIELD EFFECT TRANSISTORS
- Publication number 20160079384
- Publication date Mar 17, 2016
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DENSELY SPACED FINS FOR SEMICONDUCTOR FIN FIELD EFFECT TRANSISTORS
- Publication number 20160027776
- Publication date Jan 28, 2016
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE SELF ALIGNED VIA PATTERNING
- Publication number 20150371896
- Publication date Dec 24, 2015
- International Business Machines Corporation
- Hsueh-Chung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE SELF-ALIGNED VIA PATTERNING
- Publication number 20150364372
- Publication date Dec 17, 2015
- International Business Machines Corporation
- Hsueh-Chung Chen
- H01 - BASIC ELECTRIC ELEMENTS

Yunpeng Yin

Person

Patents Grantslast 30 patents

Self-aligned contact process enabled by low temperature

FinFET with merge-free fins

Fin formation in fin field effect transistors

Fin density control of multigate devices through sidewall image tra...

Bulk fin formation with vertical fin sidewall profile

Work function metal fill for replacement gate fin field effect tran...

Work function metal fill for replacement gate fin field effect tran...

Fin formation in fin field effect transistors

Self-aligned contact process enabled by low temperature

Methods for forming FinFETs having epitaxial Si S/D extensions with...

Non-lithographic line pattern formation

FinFETs with non-merged epitaxial S/D extensions on a seed layer an...

FinFETs with non-merged epitaxial S/D extensions having a SiGe seed...

FinFET semiconductor device having integrated SiGe fin

Critical dimension shrink through selective metal growth on metal h...

Method and structure of forming FinFET electrical fuse structure

Densely spaced fins for semiconductor fin field effect transistors

Fin density control of multigate devices through sidewall image tra...

Fin formation in fin field effect transistors

Critical dimension shrink through selective metal growth on metal h...

Method and structure of forming FinFET electrical fuse structure

Partially isolated fin-shaped field effect transistors

Self-aligned contact process enabled by low temperature

Stop layer through ion implantation for etch stop

Critical dimension shrink through selective metal growth on metal h...

Gate structure integration scheme for fin field effect transistors

Ultra-thin metal wires formed through selective deposition

Low-K spacer for RMG finFET formation

Bulk fin formation with vertical fin sidewall profile

Densely spaced fins for semiconductor fin field effect transistors

Patents Applicationslast 30 patents

STOPLAYER

FIN FORMATION IN FIN FIELD EFFECT TRANSISTORS

SELF-ALIGNED CONTACT PROCESS ENABLED BY LOW TEMPERATURE

CRITICAL DIMENSION SHRINK THROUGH SELECTIVE METAL GROWTH ON METAL H...

FINFET WITH MERGE-FREE FINS

FIN DENSITY CONTROL OF MULTIGATE DEVICES THROUGH SIDEWALL IMAGE TRA...

FIN FORMATION IN FIN FIELD EFFECT TRANSISTORS

LOW TEMPERATURE SELECTIVE DEPOSITION EMPLOYING A GERMANIUM-CONTAINI...

STRUCTURE AND METHOD FOR SiGe FIN FORMATION IN A SEMICONDUCTOR DEVICE

CRITICAL DIMENSION SHRINK THROUGH SELECTIVE METAL GROWTH ON METAL H...

Stop Layer Through Ion Implantation For Etch Stop

SELF-ALIGNED CONTACT PROCESS ENABLED BY LOW TEMPERATURE

LOW-K SPACER FOR RMG FINFET FORMATION

NON-MERGED EPITAXIALLY GROWN MOSFET DEVICES

BULK FIN FORMATION WITH VERTICAL FIN SIDEWALL PROFILE

CRITICAL DIMENSION SHRINK THROUGH SELECTIVE METAL GROWTH ON METAL H...

CRITICAL DIMENSION SHRINK THROUGH SELECTIVE METAL GROWTH ON METAL H...

BULK FIN FORMATION WITH VERTICAL FIN SIDEWALL PROFILE

NON-LITHOGRAPHIC LINE PATTERN FORMATION

WORK FUNCTION METAL FILL FOR REPLACEMENT GATE FIN FIELD EFFECT TRAN...

METHOD AND STRUCTURE OF FORMING FINFET ELECTRICAL FUSE STRUCTURE

METHOD AND STRUCTURE OF FORMING FINFET ELECTRICAL FUSE STRUCTURE

WORK FUNCTION METAL FILL FOR REPLACEMENT GATE FIN FIELD EFFECT TRAN...

SELF-ALIGNED CONTACT PROCESS ENABLED BY LOW TEMPERATURE

GATE STRUCTURE INTEGRATION SCHEME FOR FIN FIELD EFFECT TRANSISTORS

FIN FORMATION IN FIN FIELD EFFECT TRANSISTORS

GATE STRUCTURE INTEGRATION SCHEME FOR FIN FIELD EFFECT TRANSISTORS

DENSELY SPACED FINS FOR SEMICONDUCTOR FIN FIELD EFFECT TRANSISTORS

DOUBLE SELF ALIGNED VIA PATTERNING

DOUBLE SELF-ALIGNED VIA PATTERNING