Yunyu Wang

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Using aluminum as etch stop layer
- Patent number 11,944,020
- Issue date Mar 26, 2024
- Crossbar, Inc.
- Sundar Narayanan
Information Patent Grant
Using aluminum as etch stop layer
- Patent number 10,873,023
- Issue date Dec 22, 2020
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Differential silicon oxide etch
- Patent number 9,887,096
- Issue date Feb 6, 2018
- Applied Materials, Inc.
- Seung H. Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dry-etch for silicon-and-carbon-containing films
- Patent number 9,236,266
- Issue date Jan 12, 2016
- Applied Materials, Inc.
- Jingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Differential silicon oxide etch
- Patent number 9,034,770
- Issue date May 19, 2015
- Applied Materials, Inc.
- Seung H. Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dry-etch for silicon-and-carbon-containing films
- Patent number 8,771,536
- Issue date Jul 8, 2014
- Applied Materials, Inc.
- Jingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective suppression of dry-etch rate of materials containing both...
- Patent number 8,679,982
- Issue date Mar 25, 2014
- Applied Materials, Inc.
- Yunyu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective suppression of dry-etch rate of materials containing both...
- Patent number 8,679,983
- Issue date Mar 25, 2014
- Applied Materials, Inc.
- Yunyu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dry-etch for silicon-and-nitrogen-containing films
- Patent number 8,642,481
- Issue date Feb 4, 2014
- Applied Materials, Inc.
- Yunyu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective suppression of dry-etch rate of materials containing both...
- Patent number 8,541,312
- Issue date Sep 24, 2013
- Applied Materials, Inc.
- Yunyu Wang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
VARYING NITROGEN CONTENT IN SWITCHING LAYER OF TWO-TERMINAL RESISTI...
- Publication number 20220320431
- Publication date Oct 6, 2022
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
USING ALUMINUM AS ETCH STOP LAYER
- Publication number 20210151671
- Publication date May 20, 2021
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
USING ALUMINUM AS ETCH STOP LAYER
- Publication number 20170288139
- Publication date Oct 5, 2017
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFERENTIAL SILICON OXIDE ETCH
- Publication number 20150249018
- Publication date Sep 3, 2015
- Applied Materials, Inc.
- Seung H. Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRY-ETCH FOR SILICON-AND-CARBON-CONTAINING FILMS
- Publication number 20140273491
- Publication date Sep 18, 2014
- Applied Materials, Inc.
- Jingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFERENTIAL SILICON OXIDE ETCH
- Publication number 20140080309
- Publication date Mar 20, 2014
- Applied Materials, Inc.
- Seung H. Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRY-ETCH FOR SILICON-AND-NITROGEN-CONTAINING FILMS
- Publication number 20130130507
- Publication date May 23, 2013
- Applied Materials, Inc.
- Yunyu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE SUPPRESSION OF DRY-ETCH RATE OF MATERIALS CONTAINING BOTH...
- Publication number 20130130506
- Publication date May 23, 2013
- Applied Materials, Inc.
- Yunyu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE SUPPRESSION OF DRY-ETCH RATE OF MATERIALS CONTAINING BOTH...
- Publication number 20130059440
- Publication date Mar 7, 2013
- Applied Materials, Inc.
- Yunyu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE SUPPRESSION OF DRY-ETCH RATE OF MATERIALS CONTAINING BOTH...
- Publication number 20130052827
- Publication date Feb 28, 2013
- Applied Materials, Inc.
- Yunyu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRY-ETCH FOR SILICON-AND-NITROGEN-CONTAINING FILMS
- Publication number 20130045605
- Publication date Feb 21, 2013
- Applied Materials, Inc.
- Yunyu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRY-ETCH FOR SILICON-AND-CARBON-CONTAINING FILMS
- Publication number 20130034968
- Publication date Feb 7, 2013
- Applied Materials, Inc.
- Jingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Using aluminum as etch stop layer

Using aluminum as etch stop layer

Differential silicon oxide etch

Dry-etch for silicon-and-carbon-containing films

Differential silicon oxide etch

Dry-etch for silicon-and-carbon-containing films

Selective suppression of dry-etch rate of materials containing both...

Selective suppression of dry-etch rate of materials containing both...

Dry-etch for silicon-and-nitrogen-containing films

Selective suppression of dry-etch rate of materials containing both...

Patents Applicationslast 30 patents

VARYING NITROGEN CONTENT IN SWITCHING LAYER OF TWO-TERMINAL RESISTI...

USING ALUMINUM AS ETCH STOP LAYER

USING ALUMINUM AS ETCH STOP LAYER

DIFFERENTIAL SILICON OXIDE ETCH

DRY-ETCH FOR SILICON-AND-CARBON-CONTAINING FILMS

DIFFERENTIAL SILICON OXIDE ETCH

DRY-ETCH FOR SILICON-AND-NITROGEN-CONTAINING FILMS

SELECTIVE SUPPRESSION OF DRY-ETCH RATE OF MATERIALS CONTAINING BOTH...

SELECTIVE SUPPRESSION OF DRY-ETCH RATE OF MATERIALS CONTAINING BOTH...

SELECTIVE SUPPRESSION OF DRY-ETCH RATE OF MATERIALS CONTAINING BOTH...

DRY-ETCH FOR SILICON-AND-NITROGEN-CONTAINING FILMS

DRY-ETCH FOR SILICON-AND-CARBON-CONTAINING FILMS