Yuri Masuoka

Person

Jhubei City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device with metal gate
- Patent number 8,754,487
- Issue date Jun 17, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yuri Masuoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Local charge and work function engineering on MOSFET
- Patent number 8,679,926
- Issue date Mar 25, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huan-Tsung Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor performance improving method with metal gate
- Patent number 8,357,581
- Issue date Jan 22, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yuri Masuoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to improve dielectric quality in high-k metal gate technology
- Patent number 8,324,090
- Issue date Dec 4, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yuri Masuoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor performance with metal gate
- Patent number 8,258,587
- Issue date Sep 4, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yuri Masuoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Local charge and work function engineering on MOSFET
- Patent number 8,030,718
- Issue date Oct 4, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huan-Tsung Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor performance improving method with metal gate
- Patent number 8,012,817
- Issue date Sep 6, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yuri Masuoka
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Transistor Performance Improving Method with Metal Gate
- Publication number 20130119485
- Publication date May 16, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yuri Masuoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Local Charge and Work Function Engineering on MOSFET
- Publication number 20120003804
- Publication date Jan 5, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huan-Tsung Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR PERFORMANCE IMPROVING METHOD WITH METAL GATE
- Publication number 20110303991
- Publication date Dec 15, 2011
- Yuri Masuoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR PERFORMANCE WITH METAL GATE
- Publication number 20100084719
- Publication date Apr 8, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yuri MASUOKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR PERFORMANCE IMPROVING METHOD WITH METAL GATE
- Publication number 20100078733
- Publication date Apr 1, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yuri Masuoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCAL CHARGE AND WORK FUNCTION ENGINEERING ON MOSFET
- Publication number 20100065925
- Publication date Mar 18, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huan-Tsung Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO IMPROVE DIELECTRIC QUALITY IN HIGH-K METAL GATE TECHNOLOGY
- Publication number 20100052063
- Publication date Mar 4, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yuri Masuoka
- H01 - BASIC ELECTRIC ELEMENTS

Yuri Masuoka

Person

Patents Grantslast 30 patents

Semiconductor device with metal gate

Local charge and work function engineering on MOSFET

Transistor performance improving method with metal gate

Method to improve dielectric quality in high-k metal gate technology

Transistor performance with metal gate

Local charge and work function engineering on MOSFET

Transistor performance improving method with metal gate

Patents Applicationslast 30 patents

Transistor Performance Improving Method with Metal Gate

Local Charge and Work Function Engineering on MOSFET

TRANSISTOR PERFORMANCE IMPROVING METHOD WITH METAL GATE

TRANSISTOR PERFORMANCE WITH METAL GATE

TRANSISTOR PERFORMANCE IMPROVING METHOD WITH METAL GATE

LOCAL CHARGE AND WORK FUNCTION ENGINEERING ON MOSFET

METHOD TO IMPROVE DIELECTRIC QUALITY IN HIGH-K METAL GATE TECHNOLOGY