Yuri Mirgorodski

Person

Sunnyvale, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Non-volatile memory cell having a heating element and a substrate-b...
- Patent number 8,669,157
- Issue date Mar 11, 2014
- National Semiconductor Corporation
- Jeffrey A. Babcock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Black box model for large signal transient integrated circuit simul...
- Patent number 8,554,529
- Issue date Oct 8, 2013
- Texas Instruments Incorporated
- Yuri Mirgorodski
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Gas detector that utilizes an electric field to assist in the colle...
- Patent number 8,453,494
- Issue date Jun 4, 2013
- National Semiconductor Corporation
- Jeffrey A. Babcock
- G01 - MEASURING TESTING
Information Patent Grant
Method of enhancing charge storage in an E2PROM cell
- Patent number 8,247,862
- Issue date Aug 21, 2012
- National Semiconductor Corporation
- Jeff A. Babcock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a region of graded doping concentration in a semi...
- Patent number 8,207,578
- Issue date Jun 26, 2012
- National Semiconductor Corporation
- William French
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory cell having a heating element and a substrate-b...
- Patent number 8,183,621
- Issue date May 22, 2012
- Texas Instruments Incorporated
- Jeffrey A. Babcock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of reading an NVM cell that utilizes a gated diode
- Patent number 7,978,519
- Issue date Jul 12, 2011
- National Semiconductor Corporation
- Yuri Mirgorodski
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of erasing an NVM cell that utilizes a gated diode
- Patent number 7,969,790
- Issue date Jun 28, 2011
- National Semiconductor Corporation
- Yuri Mirgorodski
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of forming a region of graded doping concentration in a semi...
- Patent number 7,964,485
- Issue date Jun 21, 2011
- National Semiconductor Corporation
- William French
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory cell with heating element
- Patent number 7,919,807
- Issue date Apr 5, 2011
- National Semiconductor Corporation
- Jeffrey A. Babcock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory cell with two capacitors and one PNP transistor...
- Patent number 7,919,805
- Issue date Apr 5, 2011
- National Semiconductor Corporation
- Yuri Mirgorodski
- G11 - INFORMATION STORAGE
Information Patent Grant
Fuse-type memory cells based on irreversible snapback device
- Patent number 7,911,869
- Issue date Mar 22, 2011
- National Semiconductor Corporation
- Vladislav Vashchenko
- G11 - INFORMATION STORAGE
Information Patent Grant
Mid-size NVM cell and array utilizing gated diode for low current p...
- Patent number 7,859,912
- Issue date Dec 28, 2010
- National Semiconductor Corporation
- Yuri Mirgorodski
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory cell with fully isolated substrate as charge st...
- Patent number 7,808,034
- Issue date Oct 5, 2010
- National Semiconductor Corporation
- Jeff Babcock
- G11 - INFORMATION STORAGE
Information Patent Grant
Heating element for enhanced E2PROM
- Patent number 7,719,048
- Issue date May 18, 2010
- National Semiconductor Corporation
- Jeff A. Babcock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programmable ESD protection structure
- Patent number 7,705,403
- Issue date Apr 27, 2010
- National Semiconductor Corporation
- Vladislav Vashchenko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory cell with poly filled trench as control gate an...
- Patent number 7,663,173
- Issue date Feb 16, 2010
- National Semiconductor Corporation
- Saurabh Desai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with metal heat flow path coupled to transistor...
- Patent number 7,651,897
- Issue date Jan 26, 2010
- National Semiconductor Corporation
- Vladislav Vashchenko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming non-volatile memory (NVM) retention improvement u...
- Patent number 7,651,913
- Issue date Jan 26, 2010
- National Semiconductor Corporation
- Yuri Mirgorodski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a vertical MOS transistor
- Patent number 7,435,628
- Issue date Oct 14, 2008
- National Semiconductor Corporation
- Peter J. Hopper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
EEPROM structure with improved data retention utilizing biased meta...
- Patent number 7,425,741
- Issue date Sep 16, 2008
- National Semiconductor Corporation
- Andrew Strachan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a BJT with ESD self protection
- Patent number 7,422,952
- Issue date Sep 9, 2008
- National Semiconductor Corporation
- Vladislav Vashchenko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory (NVM) retention improvement utilizing protectiv...
- Patent number 7,375,393
- Issue date May 20, 2008
- National Semiconductor Corporation
- Yuri Mirgorodski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory structure and erase method with floating gate v...
- Patent number 7,339,835
- Issue date Mar 4, 2008
- National Semiconductor Corporation
- Yuri Mirgorodski
- G11 - INFORMATION STORAGE
Information Patent Grant
Reducing cross die variability in an EEPROM array
- Patent number 7,298,653
- Issue date Nov 20, 2007
- National Semiconductor Corporation
- Peter J. Hopper
- G11 - INFORMATION STORAGE
Information Patent Grant
Multistage snapback ESD protection network
- Patent number 7,298,599
- Issue date Nov 20, 2007
- National Semiconductor Corporation
- Vladislav Vashchenko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Active pixel sensor cell with integrating varactor and method for u...
- Patent number 7,262,401
- Issue date Aug 28, 2007
- Eastman Kodak Company
- Peter J. Hopper
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Vertical MOS transistor
- Patent number 7,259,411
- Issue date Aug 21, 2007
- National Semiconductor Corporation
- Peter J. Hopper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for storing analog information in EEPROM memory
- Patent number 7,233,521
- Issue date Jun 19, 2007
- National Semiconductor Corporation
- Yuri Mirgorodski
- G11 - INFORMATION STORAGE
Information Patent Grant
BJT with ESD self protection
- Patent number 7,221,036
- Issue date May 22, 2007
- National Semiconductor Corporation
- Vladislav Vashchenko
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NON-VOLATILE MEMORY CELL HAVING A HEATING ELEMENT AND A SUBSTRATE-B...
- Publication number 20120230118
- Publication date Sep 13, 2012
- TEXAS INSTRUMENTS INCORPORATED
- Jeffrey A. Babcock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gas Detector that Utilizes an Electric Field to Assist in the Colle...
- Publication number 20120060587
- Publication date Mar 15, 2012
- Jeffrey A. Babcock
- G01 - MEASURING TESTING
Information Patent Application
METHOD OF FORMING A REGION OF GRADED DOPING CONCENTRATION IN A SEMI...
- Publication number 20110233670
- Publication date Sep 29, 2011
- National Semiconductor Corporation
- William French
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-Volatile Memory Cell Having a Heating Element and a Substrate-B...
- Publication number 20110147820
- Publication date Jun 23, 2011
- Jeffrey A. Babcock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF ERASING AN NVM CELL THAT UTILIZES A GATED DIODE
- Publication number 20110007574
- Publication date Jan 13, 2011
- National Semiconductor Corporation
- Yuri Mirgorodski
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF READING AN NVM CELL THAT UTILIZES A GATED DIODE
- Publication number 20110007570
- Publication date Jan 13, 2011
- National Semiconductor Corporation
- Yuri Mirgorodski
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF ENHANCING CHARGE STORAGE IN AN E2PROM CELL
- Publication number 20100157682
- Publication date Jun 24, 2010
- National Semiconductor Corporation
- Jeff A. Babcock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MID-SIZE NVM CELL AND ARRAY UTILIZING GATED DIODE FOR LOW CURRENT P...
- Publication number 20090296493
- Publication date Dec 3, 2009
- National Semiconductor Corporation
- Yuri Mirgorodski
- G11 - INFORMATION STORAGE
Information Patent Application
Black box model for large signal transient integrated circuit simul...
- Publication number 20090144035
- Publication date Jun 4, 2009
- Yuri Mirgorodski
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Non-volatile memory (NVM) retention improvement utilizing protectiv...
- Publication number 20080213959
- Publication date Sep 4, 2008
- Yuri Mirgorodski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Circuit with Metal Heat Flow Path Coupled to Transistor...
- Publication number 20080032467
- Publication date Feb 7, 2008
- National Semiconductor Corporation
- Vladislav Vashchenko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Source capacitor enhancement for improved dynamic IR drop prevention
- Publication number 20070066002
- Publication date Mar 22, 2007
- Peter J. Hopper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Active pixel sensor cell with integrating varactor and method for u...
- Publication number 20060266925
- Publication date Nov 30, 2006
- Peter J. Hopper
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
Active pixel sensor cell with integrating varactor and method for u...
- Publication number 20050269482
- Publication date Dec 8, 2005
- Peter J. Hopper
- H04 - ELECTRIC COMMUNICATION TECHNIQUE

Yuri Mirgorodski

Person

Patents Grantslast 30 patents

Non-volatile memory cell having a heating element and a substrate-b...

Black box model for large signal transient integrated circuit simul...

Gas detector that utilizes an electric field to assist in the colle...

Method of enhancing charge storage in an E2PROM cell

Method of forming a region of graded doping concentration in a semi...

Non-volatile memory cell having a heating element and a substrate-b...

Method of reading an NVM cell that utilizes a gated diode

Method of erasing an NVM cell that utilizes a gated diode

Method of forming a region of graded doping concentration in a semi...

Non-volatile memory cell with heating element

Non-volatile memory cell with two capacitors and one PNP transistor...

Fuse-type memory cells based on irreversible snapback device

Mid-size NVM cell and array utilizing gated diode for low current p...

Non-volatile memory cell with fully isolated substrate as charge st...

Heating element for enhanced E2PROM

Programmable ESD protection structure

Non-volatile memory cell with poly filled trench as control gate an...

Integrated circuit with metal heat flow path coupled to transistor...

Method of forming non-volatile memory (NVM) retention improvement u...

Method of forming a vertical MOS transistor

EEPROM structure with improved data retention utilizing biased meta...

Method of forming a BJT with ESD self protection

Non-volatile memory (NVM) retention improvement utilizing protectiv...

Non-volatile memory structure and erase method with floating gate v...

Reducing cross die variability in an EEPROM array

Multistage snapback ESD protection network

Active pixel sensor cell with integrating varactor and method for u...

Vertical MOS transistor

Apparatus and method for storing analog information in EEPROM memory

BJT with ESD self protection

Patents Applicationslast 30 patents

NON-VOLATILE MEMORY CELL HAVING A HEATING ELEMENT AND A SUBSTRATE-B...

Gas Detector that Utilizes an Electric Field to Assist in the Colle...

METHOD OF FORMING A REGION OF GRADED DOPING CONCENTRATION IN A SEMI...

Non-Volatile Memory Cell Having a Heating Element and a Substrate-B...

METHOD OF ERASING AN NVM CELL THAT UTILIZES A GATED DIODE

METHOD OF READING AN NVM CELL THAT UTILIZES A GATED DIODE

METHOD OF ENHANCING CHARGE STORAGE IN AN E2PROM CELL

MID-SIZE NVM CELL AND ARRAY UTILIZING GATED DIODE FOR LOW CURRENT P...

Black box model for large signal transient integrated circuit simul...

Non-volatile memory (NVM) retention improvement utilizing protectiv...

Integrated Circuit with Metal Heat Flow Path Coupled to Transistor...

Source capacitor enhancement for improved dynamic IR drop prevention

Active pixel sensor cell with integrating varactor and method for u...

Active pixel sensor cell with integrating varactor and method for u...