Yuri V. Melnik

Person

Rockville, MD, US

People

Patents Grantslast 30 patents

Information Patent Grant
Bulk GaN and AlGaN single crystals
- Patent number 8,372,199
- Issue date Feb 12, 2013
- Freiberger Compound Materials GmbH
- Yuri V. Melnik
- C30 - CRYSTAL GROWTH
Information Patent Grant
Bulk GaN and AlGaN single crystals
- Patent number 8,092,596
- Issue date Jan 10, 2012
- Freiberger Compound Materials GmbH
- Yuri V. Melnik
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for fabricating crack-free Group III nitride s...
- Patent number 8,092,597
- Issue date Jan 10, 2012
- Freiberger Compound Materials GmbH
- Vladimir A. Dmitriev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Reactor for extended duration growth of gallium containing single c...
- Patent number 7,611,586
- Issue date Nov 3, 2009
- Technologies and Devices International, Inc.
- Yuri V. Melnik
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for achieving low defect density AlGaN single crystal boules
- Patent number 7,556,688
- Issue date Jul 7, 2009
- Freiberger Compound Materials GmbH
- Yuri V. Melnik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for fabricating crack-free Group III nitride s...
- Patent number 7,501,023
- Issue date Mar 10, 2009
- Technologies and Devices, International, Inc.
- Vladimir A. Dmitriev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Reactor for extended duration growth of gallium containing single c...
- Patent number 7,279,047
- Issue date Oct 9, 2007
- Technologies and Devices, International, Inc.
- Yuri V. Melnik
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Manufacturing methods for semiconductor devices with multiple III-V...
- Patent number 6,955,719
- Issue date Oct 18, 2005
- Technologies and Devices, Inc.
- Vladimir A. Dmitriev
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Bulk GaN and ALGaN single crystals
- Patent number 6,936,357
- Issue date Aug 30, 2005
- Technologies and Devices International, Inc.
- Yuri V. Melnik
- C30 - CRYSTAL GROWTH
Information Patent Grant
Reactor for extended duration growth of gallium containing single c...
- Patent number 6,656,285
- Issue date Dec 2, 2003
- Technologies and Devices International, Inc.
- Yuri V. Melnik
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for achieving low defect density GaN single crystal boules
- Patent number 6,616,757
- Issue date Sep 9, 2003
- Technologies and Devices International, Inc.
- Yuri V. Melnik
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for fabricating bulk GaN single crystals
- Patent number 6,613,143
- Issue date Sep 2, 2003
- Technologies and Devices International, Inc.
- Yuri V. Melnik
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for fabricating bulk AlGaN single crystals
- Patent number 6,576,054
- Issue date Jun 10, 2003
- Technologies and Devices International, Inc.
- Yuri V. Melnik
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC

Patents Applicationslast 30 patents

Information Patent Application
METHOD AND APPARATUS FOR FABRICATING CRACK-FREE GROUP III NITRIDE S...
- Publication number 20120076968
- Publication date Mar 29, 2012
- Freiberger Compound Materials GmbH
- Vladimir A. Dmitriev
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND APPARATUS FOR FABRICATING CRACK-FREE GROUP III NITRIDE S...
- Publication number 20110114015
- Publication date May 19, 2011
- Freiberger Compound Materials GmbH
- Vladimir A. Dmitriev
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND APPARATUS FOR FABRICATING CRACK-FREE GROUP III NITRIDE S...
- Publication number 20090286063
- Publication date Nov 19, 2009
- Freiberger Compound Materials GmbH
- Vladimir Dmitriev
- C30 - CRYSTAL GROWTH
Information Patent Application
BULK GaN AND AlGaN SINGLE CRYSTALS
- Publication number 20090148984
- Publication date Jun 11, 2009
- Yuri V. MELNIK
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND APPARATUS FOR FABRICATING CRACK-FREE GROUP III NITRIDE S...
- Publication number 20090092815
- Publication date Apr 9, 2009
- TECHNOLOGIES AND DEVICES INTERNATIONAL, INC.
- Vladimir A. Dmitriev
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR ACHIEVING LOW DEFECT DENSITY ALGAN SINGLE CRYSTAL BOULES
- Publication number 20090050913
- Publication date Feb 26, 2009
- Freiberger Compound Materials GmbH
- Yuri MELNIK
- C30 - CRYSTAL GROWTH
Information Patent Application
BULK GaN AND AlGaN SINGLE CRYSTALS
- Publication number 20080257256
- Publication date Oct 23, 2008
- Yuri V. MELNIK
- C30 - CRYSTAL GROWTH
Information Patent Application
REACTOR FOR EXTENDED DURATION GROWTH OF GALLIUM CONTAINING SINGLE C...
- Publication number 20080022926
- Publication date Jan 31, 2008
- TECHNOLOGIES AND DEVICES INTERNATIONAL, INC.
- Yuri V. Melnik
- C30 - CRYSTAL GROWTH
Information Patent Application
Method and apparatus for fabricating crack-free group III nitride s...
- Publication number 20060280668
- Publication date Dec 14, 2006
- Technologies & Devices International, Inc.
- Vladimir A. Dmitriev
- C30 - CRYSTAL GROWTH
Information Patent Application
Bulk GaN and AIGaN single crystals
- Publication number 20050244997
- Publication date Nov 3, 2005
- Technologies & Devices International, Inc.
- Yuri V. Melnik
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for achieving low defect density AlGaN single crystal boules
- Publication number 20050212001
- Publication date Sep 29, 2005
- Technologies & Devices International, Inc.
- Yuri V. Melnik
- C30 - CRYSTAL GROWTH
Information Patent Application
Bulk GaN and AlGaN single crystals
- Publication number 20050164044
- Publication date Jul 28, 2005
- Technologies & Devices International, Inc.
- Yuri V. Melnik
- C30 - CRYSTAL GROWTH
Information Patent Application
Method and apparatus for fabricating crack-free Group III nitride s...
- Publication number 20050142391
- Publication date Jun 30, 2005
- Technologies & Devices International, Inc.
- Vladimir A. Dmitriev
- C30 - CRYSTAL GROWTH
Information Patent Application
Reactor for extended duration growth of gallium containing single c...
- Publication number 20050056222
- Publication date Mar 17, 2005
- Technologies & Devices International, Inc.
- Yuri V. Melnik
- C30 - CRYSTAL GROWTH
Information Patent Application
Manufacturing methods for semiconductor devices with multiple III-V...
- Publication number 20040137657
- Publication date Jul 15, 2004
- Vladimir A. Dmitriev
- C30 - CRYSTAL GROWTH
Information Patent Application
Bulk GaN and AlGaN single crystals
- Publication number 20030226496
- Publication date Dec 11, 2003
- Technologies & Devices International, Inc.
- Yuri V. Melnik
- C30 - CRYSTAL GROWTH
Information Patent Application
REACTOR FOR EXTENDED DURATION GROWTH OF GALLIUM CONTAINING SINGLE C...
- Publication number 20030221619
- Publication date Dec 4, 2003
- Yuri V. Melnik
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR ACHIEVING LOW DEFECT DENSITY AIGAN SINGLE CRYSTAL BOULES
- Publication number 20030205193
- Publication date Nov 6, 2003
- Yuri V. Melnik
- C30 - CRYSTAL GROWTH

Yuri V. Melnik

Person

Patents Grantslast 30 patents

Bulk GaN and AlGaN single crystals

Bulk GaN and AlGaN single crystals

Method and apparatus for fabricating crack-free Group III nitride s...

Reactor for extended duration growth of gallium containing single c...

Method for achieving low defect density AlGaN single crystal boules

Method and apparatus for fabricating crack-free Group III nitride s...

Reactor for extended duration growth of gallium containing single c...

Manufacturing methods for semiconductor devices with multiple III-V...

Bulk GaN and ALGaN single crystals

Reactor for extended duration growth of gallium containing single c...

Method for achieving low defect density GaN single crystal boules

Method for fabricating bulk GaN single crystals

Method for fabricating bulk AlGaN single crystals

Patents Applicationslast 30 patents

METHOD AND APPARATUS FOR FABRICATING CRACK-FREE GROUP III NITRIDE S...

METHOD AND APPARATUS FOR FABRICATING CRACK-FREE GROUP III NITRIDE S...

METHOD AND APPARATUS FOR FABRICATING CRACK-FREE GROUP III NITRIDE S...

BULK GaN AND AlGaN SINGLE CRYSTALS

METHOD AND APPARATUS FOR FABRICATING CRACK-FREE GROUP III NITRIDE S...

METHOD FOR ACHIEVING LOW DEFECT DENSITY ALGAN SINGLE CRYSTAL BOULES

BULK GaN AND AlGaN SINGLE CRYSTALS

REACTOR FOR EXTENDED DURATION GROWTH OF GALLIUM CONTAINING SINGLE C...

Method and apparatus for fabricating crack-free group III nitride s...

Bulk GaN and AIGaN single crystals

Method for achieving low defect density AlGaN single crystal boules

Bulk GaN and AlGaN single crystals

Method and apparatus for fabricating crack-free Group III nitride s...

Reactor for extended duration growth of gallium containing single c...

Manufacturing methods for semiconductor devices with multiple III-V...

Bulk GaN and AlGaN single crystals

REACTOR FOR EXTENDED DURATION GROWTH OF GALLIUM CONTAINING SINGLE C...

METHOD FOR ACHIEVING LOW DEFECT DENSITY AIGAN SINGLE CRYSTAL BOULES