Yusuke Kohyama

Person

Poughkeepsie, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Step-embedded SiGe structure for PFET mobility enhancement
- Patent number 7,696,537
- Issue date Apr 13, 2010
- Toshiba America Electronic Components, Inc.
- Yusuke Kohyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI bottom pre-doping merged e-SiGe for poly height reduction
- Patent number 7,605,042
- Issue date Oct 20, 2009
- Toshiba America Electronic Components, Inc.
- Yusuke Kohyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-leakage transistor and manufacturing method thereof
- Patent number 7,550,355
- Issue date Jun 23, 2009
- Toshiba America Electronic Components, Inc.
- Yusuke Kohyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon on insulator device and method of manufacturing the same
- Patent number 7,537,981
- Issue date May 26, 2009
- Kabuhsiki Kaisha Toshiba
- Yusuke Kohyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduction of short-circuiting between contacts at or near a tensile...
- Patent number 7,514,752
- Issue date Apr 7, 2009
- Toshiba America Electronic Components, Inc.
- Yusuke Kohyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon on insulator device and method of manufacturing the same
- Patent number 7,227,228
- Issue date Jun 5, 2007
- Kabushika Kaisha Toshiba
- Yusuke Kohyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a hollow region and method of manufactu...
- Patent number 7,075,169
- Issue date Jul 11, 2006
- Kabushiki Kaisha Toshiba
- Yoshihiro Minami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with SOI region and bulk region and method of...
- Patent number 6,979,866
- Issue date Dec 27, 2005
- Kabushiki Kaisha Toshiba
- Atsushi Azuma
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SILICON ON INSULATOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20070184589
- Publication date Aug 9, 2007
- Kabushiki Kaisha Toshiba
- Yusuke Kohyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reduction of short-circuiting between contacts at or near a tensile...
- Publication number 20070045747
- Publication date Mar 1, 2007
- Toshiba America Electronic Components, Inc
- Yusuke Kohyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low-leakage transistor and manufacturing method thereof
- Publication number 20070048967
- Publication date Mar 1, 2007
- Toshiba America Electronic Components, Inc
- Yusuke Kohyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI bottom pre-doping merged e-SiGe for poly height reduction
- Publication number 20060234432
- Publication date Oct 19, 2006
- Toshiba America Electronic Components, Inc
- Yusuke Kohyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Step-embedded SiGe structure for PFET mobility enhancement
- Publication number 20060231826
- Publication date Oct 19, 2006
- Toshiba America Electronic Components, Inc
- Yusuke Kohyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon on insulator device and method of manufacturing the same
- Publication number 20050258485
- Publication date Nov 24, 2005
- Kabushiki Kaisha Toshiba
- Yusuke Kohyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having a hollow region and method of manufactu...
- Publication number 20040124439
- Publication date Jul 1, 2004
- Yoshihiro Minami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device with SOI region and bulk region and method of...
- Publication number 20040108552
- Publication date Jun 10, 2004
- Atsushi Azuma
- H01 - BASIC ELECTRIC ELEMENTS

Yusuke Kohyama

Person

Patents Grantslast 30 patents

Step-embedded SiGe structure for PFET mobility enhancement

SOI bottom pre-doping merged e-SiGe for poly height reduction

Low-leakage transistor and manufacturing method thereof

Silicon on insulator device and method of manufacturing the same

Reduction of short-circuiting between contacts at or near a tensile...

Silicon on insulator device and method of manufacturing the same

Semiconductor device having a hollow region and method of manufactu...

Semiconductor device with SOI region and bulk region and method of...

Patents Applicationslast 30 patents

SILICON ON INSULATOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Reduction of short-circuiting between contacts at or near a tensile...

Low-leakage transistor and manufacturing method thereof

SOI bottom pre-doping merged e-SiGe for poly height reduction

Step-embedded SiGe structure for PFET mobility enhancement

Silicon on insulator device and method of manufacturing the same

Semiconductor device having a hollow region and method of manufactu...

Semiconductor device with SOI region and bulk region and method of...