Yusuke Mori

Person

Fukuchiyama-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method of forming nitride semiconductor film
- Patent number 12,094,710
- Issue date Sep 17, 2024
- Tokyo Electron Limited
- Nobuaki Takahashi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Group-III nitride substrate
- Patent number 12,049,710
- Issue date Jul 30, 2024
- Panasonic Holdings Corporation
- Yusuke Mori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing apparatus for a group-III nitride crystal comprising...
- Patent number 11,879,184
- Issue date Jan 23, 2024
- Panasonic Holdings Corporation
- Yusuke Mori
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Manufacturing method for a group-III nitride crystal that requires...
- Patent number 11,859,311
- Issue date Jan 2, 2024
- Panasonic Holdings Corporation
- Yusuke Mori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing group III nitride crystal by reacting an ox...
- Patent number 11,795,573
- Issue date Oct 24, 2023
- Osaka University
- Yusuke Mori
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for manufacturing a group III-nitride crystal comprising sup...
- Patent number 11,753,739
- Issue date Sep 12, 2023
- Panasonic Holdings Corporation
- Yusuke Mori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride crystal, group III nitride substrate, and method...
- Patent number 11,713,516
- Issue date Aug 1, 2023
- Panasonic Holdings Corporation
- Yusuke Mori
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Group-III nitride substrate
- Patent number 11,713,517
- Issue date Aug 1, 2023
- Panasonic Holdings Corporation
- Yusuke Mori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride crystal, group III nitride substrate, and method...
- Patent number 11,624,128
- Issue date Apr 11, 2023
- Panasonic Holdings Corporation
- Yusuke Mori
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Adhesive for lithium-ion electrode, electrode for lithium-ion batte...
- Patent number 11,430,973
- Issue date Aug 30, 2022
- Sanyo Chemical Industries, Ltd.
- Tomoya Ohta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group-III nitride substrate containing carbon at a surface region t...
- Patent number 11,396,716
- Issue date Jul 26, 2022
- Osaka University
- Yusuke Mori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing group III nitride crystal and seed substrate
- Patent number 11,377,757
- Issue date Jul 5, 2022
- Panasonic Holdings Corporation
- Yoshio Okayama
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing a group III-nitride crystal comprising a nu...
- Patent number 11,220,759
- Issue date Jan 11, 2022
- Osaka University
- Yusuke Mori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing a group III-nitride crystal comprising sup...
- Patent number 11,155,931
- Issue date Oct 26, 2021
- Osaka University
- Yusuke Mori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Production method for group III nitride crystal
- Patent number 10,927,476
- Issue date Feb 23, 2021
- Osaka University
- Yusuke Mori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing method of III-V compound crystal and manufacturing me...
- Patent number 10,910,511
- Issue date Feb 2, 2021
- Osaka University
- Yusuke Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing group-III nitride semiconductor crystal su...
- Patent number 10,309,036
- Issue date Jun 4, 2019
- Osaka University
- Yusuke Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing group-III nitride crystal, group-III nitride c...
- Patent number 10,266,965
- Issue date Apr 23, 2019
- Osaka University
- Yusuke Mori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing nitride crystal substrate and substrate fo...
- Patent number 10,260,165
- Issue date Apr 16, 2019
- Osaka University
- Yusuke Mori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for producing group III nitride crystal and apparatus for p...
- Patent number 10,202,710
- Issue date Feb 12, 2019
- Osaka University
- Yusuke Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystal growth apparatus and crystal production method
- Patent number 10,145,022
- Issue date Dec 4, 2018
- Osaka University
- Yusuke Mori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing group III nitride crystal
- Patent number 10,059,590
- Issue date Aug 28, 2018
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Yusuke Mori
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method for producing group III nitride crystal, group III nitride c...
- Patent number 10,026,612
- Issue date Jul 17, 2018
- Osaka University
- Yusuke Mori
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for producing group III element nitride crystal, group III e...
- Patent number 10,011,921
- Issue date Jul 3, 2018
- Osaka University
- Yusuke Mori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing group III nitride crystal, group III nitride c...
- Patent number 9,834,859
- Issue date Dec 5, 2017
- Osaka University
- Yusuke Mori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Target substance transfer method, crystal production method, compos...
- Patent number 9,751,068
- Issue date Sep 5, 2017
- Osaka University
- Yusuke Mori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride crystal and method for producing the same
- Patent number 9,096,950
- Issue date Aug 4, 2015
- Ricoh Company, Ltd.
- Takashi Satoh
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Nitride single crystal manufacturing apparatus
- Patent number 9,017,479
- Issue date Apr 28, 2015
- NGK Insulators, Ltd.
- Makoto Iwai
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Process for producing a nitride single crystal and apparatus therefor
- Patent number 8,999,059
- Issue date Apr 7, 2015
- NGK Insulators, Ltd.
- Katsuhiro Imai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Melt composition for gallium nitride single crystal growth and meth...
- Patent number 8,657,955
- Issue date Feb 25, 2014
- NGK Insulators, Ltd.
- Makoto Iwai
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
GROUP-III NITRIDE SUBSTRATE
- Publication number 20240352623
- Publication date Oct 24, 2024
- Panasonic Holdings Corporation
- Yusuke MORI
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP-III NITRIDE SUBSTRATE
- Publication number 20230323563
- Publication date Oct 12, 2023
- Panasonic Holdings Corporation
- Yusuke MORI
- C30 - CRYSTAL GROWTH
Information Patent Application
MANUFACTURING APPARATUS FOR GROUP-III NITRIDE CRYSTAL AND MANUFACTU...
- Publication number 20220411962
- Publication date Dec 29, 2022
- Panasonic Holdings Corporation
- Yusuke MORI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
MANUFACTURING METHOD FOR GROUP-III NITRIDE CRYSTAL
- Publication number 20220411964
- Publication date Dec 29, 2022
- Panasonic Holdings Corporation
- Yusuke MORI
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE CRYSTAL MANUFACTURING APPARATUS AND MANUFACTURING...
- Publication number 20220341056
- Publication date Oct 27, 2022
- Panasonic Holdings Corporation
- Yusuke MORI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING AND GROUP III NITRIDE CRYSTAL
- Publication number 20220325437
- Publication date Oct 13, 2022
- Panasonic Holdings Corporation
- Yusuke MORI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING GROUP-III NITRIDE CRYSTAL
- Publication number 20220056614
- Publication date Feb 24, 2022
- OSAKA UNIVERSITY
- Yusuke MORI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING GROUP III NITRIDE CRYSTAL
- Publication number 20220002904
- Publication date Jan 6, 2022
- OSAKA UNIVERSITY
- Yusuke MORI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE CRYSTAL, GROUP III NITRIDE SUBSTRATE, AND METHOD...
- Publication number 20210388528
- Publication date Dec 16, 2021
- PANASONIC CORPORATION
- Yusuke MORI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE CRYSTAL, GROUP III NITRIDE SUBSTRATE, AND METHOD...
- Publication number 20210388529
- Publication date Dec 16, 2021
- PANASONIC CORPORATION
- Yusuke MORI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ADHESIVE FOR LITHIUM-ION ELECTRODE, ELECTRODE FOR LITHIUM-ION BATTE...
- Publication number 20210280844
- Publication date Sep 9, 2021
- SANYO CHEMICAL INDUSTRIES, LTD.
- Tomoya OHTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING NITRIDE SEMICONDUCTOR FILM
- Publication number 20210217618
- Publication date Jul 15, 2021
- TOKYO ELECTRON LIMITED
- Nobuaki TAKAHASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP-III NITRIDE SUBSTRATE
- Publication number 20210087707
- Publication date Mar 25, 2021
- PANASONIC CORPORATION
- Yusuke MORI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL AND SEED SUBSTRATE
- Publication number 20200263320
- Publication date Aug 20, 2020
- PANASONIC CORPORATION
- Yoshio OKAYAMA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING GROUP-III NITRIDE CRYSTAL
- Publication number 20200263317
- Publication date Aug 20, 2020
- OSAKA UNIVERSITY
- Yusuke MORI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING GROUP-III NITRIDE CRYSTAL
- Publication number 20200255975
- Publication date Aug 13, 2020
- OSAKA UNIVERSITY
- Yusuke MORI
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP-III NITRIDE SUBSTRATE AND METHOD OF MANUFACTURING GROUP-III N...
- Publication number 20200017993
- Publication date Jan 16, 2020
- OSAKA UNIVERSITY
- Yusuke MORI
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION METHOD FOR GROUP III NITRIDE CRYSTAL
- Publication number 20190271096
- Publication date Sep 5, 2019
- OSAKA UNIVERSITY
- Yusuke MORI
- C30 - CRYSTAL GROWTH
Information Patent Application
MANUFACTURING METHOD OF III-V COMPOUND CRYSTAL AND MANUFACTURING ME...
- Publication number 20190088816
- Publication date Mar 21, 2019
- Disco Corporation
- Yusuke Mori
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL, SEMICONDUCTOR APPAR...
- Publication number 20180094361
- Publication date Apr 5, 2018
- Osaka University
- Yusuke MORI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING GROUP-III NITRIDE SEMICONDUCTOR CRYSTAL SU...
- Publication number 20180038010
- Publication date Feb 8, 2018
- Osaka University
- Yusuke MORI
- C30 - CRYSTAL GROWTH
Information Patent Application
CRYSTAL GROWTH APPARATUS AND CRYSTAL PRODUCTION METHOD
- Publication number 20170362735
- Publication date Dec 21, 2017
- OSAKA UNIVERSITY
- Yusuke MORI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING GROUP III ELEMENT NITRIDE CRYSTAL, GROUP III E...
- Publication number 20170321348
- Publication date Nov 9, 2017
- Yusuke MORI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING NITRIDE CRYSTAL SUBSTRATE AND SUBSTRATE FO...
- Publication number 20170314157
- Publication date Nov 2, 2017
- Osaka University
- Yusuke MORI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING NITRIDE CRYSTAL SUBSTRATE AND SUBSTRATE FO...
- Publication number 20170191186
- Publication date Jul 6, 2017
- OSAKA UNIVERSITY
- Yusuke MORI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING GROUP-III NITRIDE CRYSTAL, GROUP-III NITRIDE C...
- Publication number 20170073839
- Publication date Mar 16, 2017
- OSAKA UNIVERSITY
- Yusuke MORI
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR PRODUCING GROUP III NITRIDE CRYSTAL AND APPARATUS FOR P...
- Publication number 20170073840
- Publication date Mar 16, 2017
- OSAKA UNIVERSITY
- Yusuke MORI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL, GROUP III NITRIDE C...
- Publication number 20160268129
- Publication date Sep 15, 2016
- OSAKA UNIVERSITY
- Yusuke MORI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
APPARATUS AND METHOD FOR MANUFACTURING GROUP 13 NITRIDE CRYSTAL
- Publication number 20160168747
- Publication date Jun 16, 2016
- RICOH COMPANY, LTD.
- Takashi SATOH
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL, AND APPARATUS FOR P...
- Publication number 20160090304
- Publication date Mar 31, 2016
- Panasonic Intellectual Property Management Co., Ltd.
- YUSUKE MORI
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL

Yusuke Mori

Person

Patents Grantslast 30 patents

Method of forming nitride semiconductor film

Group-III nitride substrate

Manufacturing apparatus for a group-III nitride crystal comprising...

Manufacturing method for a group-III nitride crystal that requires...

Method of manufacturing group III nitride crystal by reacting an ox...

Method for manufacturing a group III-nitride crystal comprising sup...

Group III nitride crystal, group III nitride substrate, and method...

Group-III nitride substrate

Group III nitride crystal, group III nitride substrate, and method...

Adhesive for lithium-ion electrode, electrode for lithium-ion batte...

Group-III nitride substrate containing carbon at a surface region t...

Method for producing group III nitride crystal and seed substrate

Method of manufacturing a group III-nitride crystal comprising a nu...

Method for manufacturing a group III-nitride crystal comprising sup...

Production method for group III nitride crystal

Manufacturing method of III-V compound crystal and manufacturing me...

Method for manufacturing group-III nitride semiconductor crystal su...

Method for producing group-III nitride crystal, group-III nitride c...

Method for manufacturing nitride crystal substrate and substrate fo...

Process for producing group III nitride crystal and apparatus for p...

Crystal growth apparatus and crystal production method

Method for producing group III nitride crystal

Method for producing group III nitride crystal, group III nitride c...

Method for producing group III element nitride crystal, group III e...

Method for producing group III nitride crystal, group III nitride c...

Target substance transfer method, crystal production method, compos...

Nitride crystal and method for producing the same

Nitride single crystal manufacturing apparatus

Process for producing a nitride single crystal and apparatus therefor

Melt composition for gallium nitride single crystal growth and meth...

Patents Applicationslast 30 patents

GROUP-III NITRIDE SUBSTRATE

GROUP-III NITRIDE SUBSTRATE

MANUFACTURING APPARATUS FOR GROUP-III NITRIDE CRYSTAL AND MANUFACTU...

MANUFACTURING METHOD FOR GROUP-III NITRIDE CRYSTAL

GROUP III NITRIDE CRYSTAL MANUFACTURING APPARATUS AND MANUFACTURING...

METHOD OF MANUFACTURING AND GROUP III NITRIDE CRYSTAL

METHOD OF MANUFACTURING GROUP-III NITRIDE CRYSTAL

METHOD OF MANUFACTURING GROUP III NITRIDE CRYSTAL

GROUP III NITRIDE CRYSTAL, GROUP III NITRIDE SUBSTRATE, AND METHOD...

GROUP III NITRIDE CRYSTAL, GROUP III NITRIDE SUBSTRATE, AND METHOD...

ADHESIVE FOR LITHIUM-ION ELECTRODE, ELECTRODE FOR LITHIUM-ION BATTE...

METHOD OF FORMING NITRIDE SEMICONDUCTOR FILM

GROUP-III NITRIDE SUBSTRATE

METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL AND SEED SUBSTRATE

METHOD OF MANUFACTURING GROUP-III NITRIDE CRYSTAL

METHOD OF MANUFACTURING GROUP-III NITRIDE CRYSTAL

GROUP-III NITRIDE SUBSTRATE AND METHOD OF MANUFACTURING GROUP-III N...

PRODUCTION METHOD FOR GROUP III NITRIDE CRYSTAL

MANUFACTURING METHOD OF III-V COMPOUND CRYSTAL AND MANUFACTURING ME...

METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL, SEMICONDUCTOR APPAR...

METHOD FOR MANUFACTURING GROUP-III NITRIDE SEMICONDUCTOR CRYSTAL SU...

CRYSTAL GROWTH APPARATUS AND CRYSTAL PRODUCTION METHOD

METHOD FOR PRODUCING GROUP III ELEMENT NITRIDE CRYSTAL, GROUP III E...

METHOD FOR MANUFACTURING NITRIDE CRYSTAL SUBSTRATE AND SUBSTRATE FO...

METHOD FOR MANUFACTURING NITRIDE CRYSTAL SUBSTRATE AND SUBSTRATE FO...

METHOD FOR PRODUCING GROUP-III NITRIDE CRYSTAL, GROUP-III NITRIDE C...

PROCESS FOR PRODUCING GROUP III NITRIDE CRYSTAL AND APPARATUS FOR P...

METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL, GROUP III NITRIDE C...

APPARATUS AND METHOD FOR MANUFACTURING GROUP 13 NITRIDE CRYSTAL

METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL, AND APPARATUS FOR P...