Yusuke Tsukada

Person

Ushiku, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Self-standing GaN substrate, GaN crystal, method for producing GaN...
- Patent number 12,107,129
- Issue date Oct 1, 2024
- Mitsubishi Chemical Corporation
- Satoru Nagao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride substrate and manufacturing method of nitride semic...
- Patent number 11,670,687
- Issue date Jun 6, 2023
- Mitsubishi Chemical Corporation
- Yusuke Tsukada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-standing GaN substrate, GaN crystal, method for producing GaN...
- Patent number 11,664,428
- Issue date May 30, 2023
- Mitsubishi Chemical Corporation
- Satoru Nagao
- C30 - CRYSTAL GROWTH
Information Patent Grant
Non-polar or semi-polar GaN wafer
- Patent number 11,236,439
- Issue date Feb 1, 2022
- Mitsubishi Chemical Corporation
- Yusuke Tsukada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-standing GaN substrate, GaN crystal, method for producing GaN...
- Patent number 11,038,024
- Issue date Jun 15, 2021
- MITSUBISHI CHEMICAL CORPORATION
- Satoru Nagao
- C30 - CRYSTAL GROWTH
Information Patent Grant
Self-standing GaN substrate, GaN crystal, method for producing GaN...
- Patent number 11,031,475
- Issue date Jun 8, 2021
- MITSUBISHI CHEMICAL CORPORATION
- Satoru Nagao
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gallium nitride substrate and manufacturing method of nitride semic...
- Patent number 10,734,485
- Issue date Aug 4, 2020
- Mitsubishi Chemical Corporation
- Yusuke Tsukada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN substrate, method for producing GaN substrate, method for produ...
- Patent number 10,655,244
- Issue date May 19, 2020
- Mitsubishi Chemical Corporation
- Yusuke Tsukada
- C30 - CRYSTAL GROWTH
Information Patent Grant
GaN substrate
- Patent number 10,612,161
- Issue date Apr 7, 2020
- Mitsubishi Chemical Corporation
- Tetsuharu Kajimoto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Self-standing GaN substrate, GaN crystal, method for producing GaN...
- Patent number 10,475,887
- Issue date Nov 12, 2019
- MITSUBISHI CHEMICAL CORPORATION
- Satoru Nagao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN substrate, method for producing GaN substrate, method for produ...
- Patent number 10,066,319
- Issue date Sep 4, 2018
- Mitsubishi Chemical Corporation
- Yusuke Tsukada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gallium nitride substrate and manufacturing method of nitride semic...
- Patent number 9,673,046
- Issue date Jun 6, 2017
- Mitsubishi Chemical Corporation
- Yusuke Tsukada
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...
- Publication number 20230253461
- Publication date Aug 10, 2023
- MITSUBISHI CHEMICAL CORPORATION
- Satoru NAGAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN CRYSTAL AND GAN SUBSTRATE
- Publication number 20230203711
- Publication date Jun 29, 2023
- MITSUBISHI CHEMICAL CORPORATION
- Yusuke TSUKADA
- C30 - CRYSTAL GROWTH
Information Patent Application
SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...
- Publication number 20210273058
- Publication date Sep 2, 2021
- MITSUBISHI CHEMICAL CORPORATION
- Satoru NAGAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE SUBSTRATE AND MANUFACTURING METHOD OF NITRIDE SEMIC...
- Publication number 20200321438
- Publication date Oct 8, 2020
- MITSUBISHI CHEMICAL CORPORATION
- Yusuke Tsukada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-POLAR OR SEMI-POLAR GaN WAFER
- Publication number 20200032420
- Publication date Jan 30, 2020
- MITSUBISHI CHEMICAL CORPORATION
- Yusuke TSUKADA
- C30 - CRYSTAL GROWTH
Information Patent Application
SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...
- Publication number 20200013860
- Publication date Jan 9, 2020
- MITSUBISHI CHEMICAL CORPORATION
- Satoru NAGAO
- C30 - CRYSTAL GROWTH
Information Patent Application
SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...
- Publication number 20190312111
- Publication date Oct 10, 2019
- MITSUBISHI CHEMICAL CORPORATION
- Satoru NAGAO
- C30 - CRYSTAL GROWTH
Information Patent Application
GaN SUBSTRATE, METHOD FOR PRODUCING GaN SUBSTRATE, METHOD FOR PRODU...
- Publication number 20180334758
- Publication date Nov 22, 2018
- MITSUBISHI CHEMICAL CORPORATION
- Yusuke TSUKADA
- C30 - CRYSTAL GROWTH
Information Patent Application
NON-POLAR OR SEMI-POLAR GaN WAFER
- Publication number 20180142376
- Publication date May 24, 2018
- MITSUBISHI CHEMICAL CORPORATION
- Yusuke TSUKADA
- C30 - CRYSTAL GROWTH
Information Patent Application
GaN SUBSTRATE
- Publication number 20170362739
- Publication date Dec 21, 2017
- MITSUBISHI CHEMICAL CORPORATION
- Tetsuharu KAJIMOTO
- C30 - CRYSTAL GROWTH
Information Patent Application
GALLIUM NITRIDE SUBSTRATE AND MANUFACTURING METHOD OF NITRIDE SEMIC...
- Publication number 20170200789
- Publication date Jul 13, 2017
- MITSUBISHI CHEMICAL CORPORATION
- Yusuke TSUKADA
- C30 - CRYSTAL GROWTH
Information Patent Application
GaN SUBSTRATE, METHOD FOR PRODUCING GaN SUBSTRATE, METHOD FOR PRODU...
- Publication number 20160319460
- Publication date Nov 3, 2016
- MITSUBISHI CHEMICAL CORPORATION
- Yusuke TSUKADA
- C30 - CRYSTAL GROWTH
Information Patent Application
SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...
- Publication number 20160233306
- Publication date Aug 11, 2016
- MITSUBISHI CHEMICAL CORPORATION
- Satoru NAGAO
- C30 - CRYSTAL GROWTH
Information Patent Application
GALLIUM NITRIDE SUBSTRATE AND MANUFACTURING METHOD OF NITRIDE SEMIC...
- Publication number 20150311068
- Publication date Oct 29, 2015
- MITSUBISHI CHEMICAL CORPORATION
- Yusuke TSUKADA
- H01 - BASIC ELECTRIC ELEMENTS

Yusuke Tsukada

Person

Patents Grantslast 30 patents

Self-standing GaN substrate, GaN crystal, method for producing GaN...

Gallium nitride substrate and manufacturing method of nitride semic...

Self-standing GaN substrate, GaN crystal, method for producing GaN...

Non-polar or semi-polar GaN wafer

Self-standing GaN substrate, GaN crystal, method for producing GaN...

Self-standing GaN substrate, GaN crystal, method for producing GaN...

Gallium nitride substrate and manufacturing method of nitride semic...

GaN substrate, method for producing GaN substrate, method for produ...

GaN substrate

Self-standing GaN substrate, GaN crystal, method for producing GaN...

GaN substrate, method for producing GaN substrate, method for produ...

Gallium nitride substrate and manufacturing method of nitride semic...

Patents Applicationslast 30 patents

SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...

GAN CRYSTAL AND GAN SUBSTRATE

SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...

GALLIUM NITRIDE SUBSTRATE AND MANUFACTURING METHOD OF NITRIDE SEMIC...

NON-POLAR OR SEMI-POLAR GaN WAFER

SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...

SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...

GaN SUBSTRATE, METHOD FOR PRODUCING GaN SUBSTRATE, METHOD FOR PRODU...

NON-POLAR OR SEMI-POLAR GaN WAFER

GaN SUBSTRATE

GALLIUM NITRIDE SUBSTRATE AND MANUFACTURING METHOD OF NITRIDE SEMIC...

GaN SUBSTRATE, METHOD FOR PRODUCING GaN SUBSTRATE, METHOD FOR PRODU...

SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...

GALLIUM NITRIDE SUBSTRATE AND MANUFACTURING METHOD OF NITRIDE SEMIC...