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Yusuke Tsukada
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Ushiku, JP
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Patents Grants
last 30 patents
Information
Patent Grant
Gallium nitride substrate and manufacturing method of nitride semic...
Patent number
11,670,687
Issue date
Jun 6, 2023
Mitsubishi Chemical Corporation
Yusuke Tsukada
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Self-standing GaN substrate, GaN crystal, method for producing GaN...
Patent number
11,664,428
Issue date
May 30, 2023
Mitsubishi Chemical Corporation
Satoru Nagao
C30 - CRYSTAL GROWTH
Information
Patent Grant
Non-polar or semi-polar GaN wafer
Patent number
11,236,439
Issue date
Feb 1, 2022
Mitsubishi Chemical Corporation
Yusuke Tsukada
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Self-standing GaN substrate, GaN crystal, method for producing GaN...
Patent number
11,038,024
Issue date
Jun 15, 2021
MITSUBISHI CHEMICAL CORPORATION
Satoru Nagao
C30 - CRYSTAL GROWTH
Information
Patent Grant
Self-standing GaN substrate, GaN crystal, method for producing GaN...
Patent number
11,031,475
Issue date
Jun 8, 2021
MITSUBISHI CHEMICAL CORPORATION
Satoru Nagao
C30 - CRYSTAL GROWTH
Information
Patent Grant
Gallium nitride substrate and manufacturing method of nitride semic...
Patent number
10,734,485
Issue date
Aug 4, 2020
Mitsubishi Chemical Corporation
Yusuke Tsukada
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
GaN substrate, method for producing GaN substrate, method for produ...
Patent number
10,655,244
Issue date
May 19, 2020
Mitsubishi Chemical Corporation
Yusuke Tsukada
C30 - CRYSTAL GROWTH
Information
Patent Grant
GaN substrate
Patent number
10,612,161
Issue date
Apr 7, 2020
Mitsubishi Chemical Corporation
Tetsuharu Kajimoto
C30 - CRYSTAL GROWTH
Information
Patent Grant
Self-standing GaN substrate, GaN crystal, method for producing GaN...
Patent number
10,475,887
Issue date
Nov 12, 2019
MITSUBISHI CHEMICAL CORPORATION
Satoru Nagao
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
GaN substrate, method for producing GaN substrate, method for produ...
Patent number
10,066,319
Issue date
Sep 4, 2018
Mitsubishi Chemical Corporation
Yusuke Tsukada
C30 - CRYSTAL GROWTH
Information
Patent Grant
Gallium nitride substrate and manufacturing method of nitride semic...
Patent number
9,673,046
Issue date
Jun 6, 2017
Mitsubishi Chemical Corporation
Yusuke Tsukada
C30 - CRYSTAL GROWTH
Patents Applications
last 30 patents
Information
Patent Application
SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...
Publication number
20230253461
Publication date
Aug 10, 2023
MITSUBISHI CHEMICAL CORPORATION
Satoru NAGAO
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
GAN CRYSTAL AND GAN SUBSTRATE
Publication number
20230203711
Publication date
Jun 29, 2023
MITSUBISHI CHEMICAL CORPORATION
Yusuke TSUKADA
C30 - CRYSTAL GROWTH
Information
Patent Application
SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...
Publication number
20210273058
Publication date
Sep 2, 2021
MITSUBISHI CHEMICAL CORPORATION
Satoru NAGAO
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
GALLIUM NITRIDE SUBSTRATE AND MANUFACTURING METHOD OF NITRIDE SEMIC...
Publication number
20200321438
Publication date
Oct 8, 2020
MITSUBISHI CHEMICAL CORPORATION
Yusuke Tsukada
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
NON-POLAR OR SEMI-POLAR GaN WAFER
Publication number
20200032420
Publication date
Jan 30, 2020
MITSUBISHI CHEMICAL CORPORATION
Yusuke TSUKADA
C30 - CRYSTAL GROWTH
Information
Patent Application
SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...
Publication number
20200013860
Publication date
Jan 9, 2020
MITSUBISHI CHEMICAL CORPORATION
Satoru NAGAO
C30 - CRYSTAL GROWTH
Information
Patent Application
SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...
Publication number
20190312111
Publication date
Oct 10, 2019
MITSUBISHI CHEMICAL CORPORATION
Satoru NAGAO
C30 - CRYSTAL GROWTH
Information
Patent Application
GaN SUBSTRATE, METHOD FOR PRODUCING GaN SUBSTRATE, METHOD FOR PRODU...
Publication number
20180334758
Publication date
Nov 22, 2018
MITSUBISHI CHEMICAL CORPORATION
Yusuke TSUKADA
C30 - CRYSTAL GROWTH
Information
Patent Application
NON-POLAR OR SEMI-POLAR GaN WAFER
Publication number
20180142376
Publication date
May 24, 2018
MITSUBISHI CHEMICAL CORPORATION
Yusuke TSUKADA
C30 - CRYSTAL GROWTH
Information
Patent Application
GaN SUBSTRATE
Publication number
20170362739
Publication date
Dec 21, 2017
MITSUBISHI CHEMICAL CORPORATION
Tetsuharu KAJIMOTO
C30 - CRYSTAL GROWTH
Information
Patent Application
GALLIUM NITRIDE SUBSTRATE AND MANUFACTURING METHOD OF NITRIDE SEMIC...
Publication number
20170200789
Publication date
Jul 13, 2017
MITSUBISHI CHEMICAL CORPORATION
Yusuke TSUKADA
C30 - CRYSTAL GROWTH
Information
Patent Application
GaN SUBSTRATE, METHOD FOR PRODUCING GaN SUBSTRATE, METHOD FOR PRODU...
Publication number
20160319460
Publication date
Nov 3, 2016
MITSUBISHI CHEMICAL CORPORATION
Yusuke TSUKADA
C30 - CRYSTAL GROWTH
Information
Patent Application
SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...
Publication number
20160233306
Publication date
Aug 11, 2016
MITSUBISHI CHEMICAL CORPORATION
Satoru NAGAO
C30 - CRYSTAL GROWTH
Information
Patent Application
GALLIUM NITRIDE SUBSTRATE AND MANUFACTURING METHOD OF NITRIDE SEMIC...
Publication number
20150311068
Publication date
Oct 29, 2015
MITSUBISHI CHEMICAL CORPORATION
Yusuke TSUKADA
H01 - BASIC ELECTRIC ELEMENTS