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last 30 patents
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Patent Grant
Self-standing GaN substrate, GaN crystal, method for producing GaN...
Patent number
12,107,129
Issue date
Oct 1, 2024
Mitsubishi Chemical Corporation
Satoru Nagao
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Bulk GaN crystal, c-plane GaN wafer, and method for manufacturing b...
Patent number
12,060,653
Issue date
Aug 13, 2024
Mitsubishi Chemical Corporation
Yutaka Mikawa
C30 - CRYSTAL GROWTH
Information
Patent Grant
Conductive C-plane GaN substrate
Patent number
11,810,782
Issue date
Nov 7, 2023
Mitsubishi Chemical Corporation
Yutaka Mikawa
C30 - CRYSTAL GROWTH
Information
Patent Grant
Gallium nitride substrate and manufacturing method of nitride semic...
Patent number
11,670,687
Issue date
Jun 6, 2023
Mitsubishi Chemical Corporation
Yusuke Tsukada
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Self-standing GaN substrate, GaN crystal, method for producing GaN...
Patent number
11,664,428
Issue date
May 30, 2023
Mitsubishi Chemical Corporation
Satoru Nagao
C30 - CRYSTAL GROWTH
Information
Patent Grant
GaN single crystal and method for manufacturing GaN single crystal
Patent number
11,591,715
Issue date
Feb 28, 2023
Mitsubishi Chemical Corporation
Hideo Fujisawa
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for growing GaN crystal and c-plane GaN substrate
Patent number
11,404,268
Issue date
Aug 2, 2022
Mitsubishi Chemical Corporation
Yutaka Mikawa
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method for producing nitride crystal and nitride crystal
Patent number
11,162,190
Issue date
Nov 2, 2021
MITSUBISHI CHEMICAL CORPORATION
Yutaka Mikawa
C01 - INORGANIC CHEMISTRY
Information
Patent Grant
Self-standing GaN substrate, GaN crystal, method for producing GaN...
Patent number
11,038,024
Issue date
Jun 15, 2021
MITSUBISHI CHEMICAL CORPORATION
Satoru Nagao
C30 - CRYSTAL GROWTH
Information
Patent Grant
Self-standing GaN substrate, GaN crystal, method for producing GaN...
Patent number
11,031,475
Issue date
Jun 8, 2021
MITSUBISHI CHEMICAL CORPORATION
Satoru Nagao
C30 - CRYSTAL GROWTH
Information
Patent Grant
GaN single crystal and method for manufacturing GaN single crystal
Patent number
11,001,940
Issue date
May 11, 2021
Mitsubishi Chemical Corporation
Hideo Fujisawa
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Crystal of nitride of group-13 metal on periodic table, and method...
Patent number
10,995,421
Issue date
May 4, 2021
Mitsubishi Chemical Corporation
Yutaka Mikawa
C30 - CRYSTAL GROWTH
Information
Patent Grant
Conductive C-plane GaN substrate
Patent number
10,903,072
Issue date
Jan 26, 2021
Mitsubishi Chemical Corporation
Yutaka Mikawa
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Conductive C-plane GaN substrate
Patent number
10,796,904
Issue date
Oct 6, 2020
Mitsubishi Chemical Corporation
Yutaka Mikawa
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Gallium nitride substrate and manufacturing method of nitride semic...
Patent number
10,734,485
Issue date
Aug 4, 2020
Mitsubishi Chemical Corporation
Yusuke Tsukada
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for growing GaN crystal and C-plane GaN substrate
Patent number
10,720,326
Issue date
Jul 21, 2020
Mitsubishi Chemical Corporation
Yutaka Mikawa
C30 - CRYSTAL GROWTH
Information
Patent Grant
GaN substrate, method for producing GaN substrate, method for produ...
Patent number
10,655,244
Issue date
May 19, 2020
Mitsubishi Chemical Corporation
Yusuke Tsukada
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method for producing nitride crystal and nitride crystal
Patent number
10,526,726
Issue date
Jan 7, 2020
MITSUBISHI CHEMICAL CORPORATION
Yutaka Mikawa
C30 - CRYSTAL GROWTH
Information
Patent Grant
Self-standing GaN substrate, GaN crystal, method for producing GaN...
Patent number
10,475,887
Issue date
Nov 12, 2019
MITSUBISHI CHEMICAL CORPORATION
Satoru Nagao
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Crystal of nitride of group-13 metal on periodic table, and method...
Patent number
10,309,038
Issue date
Jun 4, 2019
Mitsubishi Chemical Corporation
Yutaka Mikawa
C30 - CRYSTAL GROWTH
Information
Patent Grant
GaN single crystal and method for manufacturing GaN single crystal
Patent number
10,301,743
Issue date
May 28, 2019
Mitsubishi Chemical Corporation
Hideo Fujisawa
C30 - CRYSTAL GROWTH
Information
Patent Grant
GaN substrate, method for producing GaN substrate, method for produ...
Patent number
10,066,319
Issue date
Sep 4, 2018
Mitsubishi Chemical Corporation
Yusuke Tsukada
C30 - CRYSTAL GROWTH
Information
Patent Grant
Crystal of nitride of group-13 metal on periodic table, and method...
Patent number
9,890,474
Issue date
Feb 13, 2018
Mitsubishi Chemical Corporation
Yutaka Mikawa
C30 - CRYSTAL GROWTH
Information
Patent Grant
Gallium nitride substrate and manufacturing method of nitride semic...
Patent number
9,673,046
Issue date
Jun 6, 2017
Mitsubishi Chemical Corporation
Yusuke Tsukada
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method for producing nitride crystal and nitride crystal
Patent number
9,518,337
Issue date
Dec 13, 2016
MITSUBISHI CHEMICAL CORPORATION
Yutaka Mikawa
C01 - INORGANIC CHEMISTRY
Information
Patent Grant
Process for producing nitride crystal, nitride crystal and apparatu...
Patent number
9,192,910
Issue date
Nov 24, 2015
Mitsubishi Chemical Corporation
Yutaka Mikawa
B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
Information
Patent Grant
Method for producing nitride crystal
Patent number
9,163,324
Issue date
Oct 20, 2015
Mitsubishi Chemical Corporation
Hideo Fujisawa
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method for producing nitride crystal and nitride crystal
Patent number
9,096,945
Issue date
Aug 4, 2015
MITSUBISHI CHEMICAL CORPORATION
Yutaka Mikawa
C30 - CRYSTAL GROWTH
Information
Patent Grant
Production method, production vessel and member for nitride crystal
Patent number
8,609,059
Issue date
Dec 17, 2013
Mitsubishi Chemical Corporation
Yutaka Mikawa
Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information
Patent Grant
Method for producing semiconductor crystal, apparatus for crystal p...
Patent number
8,574,532
Issue date
Nov 5, 2013
Mitsubishi Chemical Corporation
Hideo Fujisawa
Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Patents Applications
last 30 patents
Information
Patent Application
GALLIUM NITRIDE CRYSTAL, GALLIUM NITRIDE SUBSTRATE, AND METHOD FOR...
Publication number
20240191395
Publication date
Jun 13, 2024
MITSUBISHI CHEMICAL CORPORATION
Yutaka MIKAWA
C30 - CRYSTAL GROWTH
Information
Patent Application
CONDUCTIVE C-PLANE GaN SUBSTRATE
Publication number
20240105449
Publication date
Mar 28, 2024
MITSUBISHI CHEMICAL CORPORATION
Yutaka MIKAWA
C30 - CRYSTAL GROWTH
Information
Patent Application
GALLIUM NITRIDE CRYSTAL, GALLIUM NITRIDE SUBSTRATE, AND METHOD FOR...
Publication number
20230392280
Publication date
Dec 7, 2023
MITSUBISHI CHEMICAL CORPORATION
Yutaka MIKAWA
C30 - CRYSTAL GROWTH
Information
Patent Application
SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...
Publication number
20230253461
Publication date
Aug 10, 2023
MITSUBISHI CHEMICAL CORPORATION
Satoru NAGAO
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
BULK GAN CRYSTAL, C-PLANE GAN WAFER, AND METHOD FOR MANUFACTURING B...
Publication number
20220112624
Publication date
Apr 14, 2022
MITSUBISHI CHEMICAL CORPORATION
Yutaka MIKAWA
C30 - CRYSTAL GROWTH
Information
Patent Application
METHOD FOR PRODUCING NITRIDE CRYSTAL AND NITRIDE CRYSTAL
Publication number
20220033992
Publication date
Feb 3, 2022
MITSUBISHI CHEMICAL CORPORATION
Yutaka MIKAWA
C30 - CRYSTAL GROWTH
Information
Patent Application
SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...
Publication number
20210273058
Publication date
Sep 2, 2021
MITSUBISHI CHEMICAL CORPORATION
Satoru NAGAO
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
GaN SINGLE CRYSTAL AND METHOD FOR MANUFACTURING GaN SINGLE CRYSTAL
Publication number
20210230770
Publication date
Jul 29, 2021
MITSUBISHI CHEMICAL CORPORATION
Hideo FUJISAWA
C30 - CRYSTAL GROWTH
Information
Patent Application
CONDUCTIVE C-PLANE GaN SUBSTRATE
Publication number
20210090886
Publication date
Mar 25, 2021
MITSUBISHI CHEMICAL CORPORATION
Yutaka MIKAWA
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
CONDUCTIVE C-PLANE GAN SUBSTRATE
Publication number
20200350163
Publication date
Nov 5, 2020
MITSUBISHI CHEMICAL CORPORATION
Yutaka MIKAWA
C30 - CRYSTAL GROWTH
Information
Patent Application
GALLIUM NITRIDE SUBSTRATE AND MANUFACTURING METHOD OF NITRIDE SEMIC...
Publication number
20200321438
Publication date
Oct 8, 2020
MITSUBISHI CHEMICAL CORPORATION
Yusuke Tsukada
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
METHOD FOR GROWING GaN CRYSTAL AND C-PLANE GaN SUBSTRATE
Publication number
20200303187
Publication date
Sep 24, 2020
MITSUBISHI CHEMICAL CORPORATION
Yutaka MIKAWA
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
METHOD FOR PRODUCING NITRIDE CRYSTAL AND NITRIDE CRYSTAL
Publication number
20200109489
Publication date
Apr 9, 2020
MITSUBISHI CHEMICAL CORPORATION
Yutaka MIKAWA
C30 - CRYSTAL GROWTH
Information
Patent Application
SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...
Publication number
20200013860
Publication date
Jan 9, 2020
MITSUBISHI CHEMICAL CORPORATION
Satoru NAGAO
C30 - CRYSTAL GROWTH
Information
Patent Application
SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...
Publication number
20190312111
Publication date
Oct 10, 2019
MITSUBISHI CHEMICAL CORPORATION
Satoru NAGAO
C30 - CRYSTAL GROWTH
Information
Patent Application
CRYSTAL OF NITRIDE OF GROUP-13 METAL ON PERIODIC TABLE, AND METHOD...
Publication number
20190203379
Publication date
Jul 4, 2019
MITSUBISHI CHEMICAL CORPORATION
Yutaka MIKAWA
C30 - CRYSTAL GROWTH
Information
Patent Application
CONDUCTIVE C-PLANE GaN SUBSTRATE
Publication number
20190189438
Publication date
Jun 20, 2019
MITSUBISHI CHEMICAL CORPORATION
Yutaka MIKAWA
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
METHOD FOR GROWING GaN CRYSTAL AND C-PLANE GaN SUBSTRATE
Publication number
20190189439
Publication date
Jun 20, 2019
MITSUBISHI CHEMICAL CORPORATION
Yutaka MIKAWA
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
GaN SINGLE CRYSTAL AND METHOD FOR MANUFACTURING GaN SINGLE CRYSTAL
Publication number
20190127881
Publication date
May 2, 2019
MITSUBISHI CHEMICAL CORPORATION
Hideo FUJISAWA
C30 - CRYSTAL GROWTH
Information
Patent Application
GaN SUBSTRATE, METHOD FOR PRODUCING GaN SUBSTRATE, METHOD FOR PRODU...
Publication number
20180334758
Publication date
Nov 22, 2018
MITSUBISHI CHEMICAL CORPORATION
Yusuke TSUKADA
C30 - CRYSTAL GROWTH
Information
Patent Application
CRYSTAL OF NITRIDE OF GROUP-13 METAL ON PERIODIC TABLE, AND METHOD...
Publication number
20180105953
Publication date
Apr 19, 2018
MITSUBISHI CHEMICAL CORPORATION
Yutaka MIKAWA
C30 - CRYSTAL GROWTH
Information
Patent Application
GaN SINGLE CRYSTAL AND METHOD FOR MANUFACTURING GaN SINGLE CRYSTAL
Publication number
20170327971
Publication date
Nov 16, 2017
MITSUBISHI CHEMICAL CORPORATION
Hideo FUJISAWA
C30 - CRYSTAL GROWTH
Information
Patent Application
METHOD FOR PRODUCING NITRIDE CRYSTAL AND NITRIDE CRYSTAL
Publication number
20170051434
Publication date
Feb 23, 2017
MITSUBISHI CHEMICAL CORPORATION
Yutaka MIKAWA
C30 - CRYSTAL GROWTH
Information
Patent Application
GaN SUBSTRATE, METHOD FOR PRODUCING GaN SUBSTRATE, METHOD FOR PRODU...
Publication number
20160319460
Publication date
Nov 3, 2016
MITSUBISHI CHEMICAL CORPORATION
Yusuke TSUKADA
C30 - CRYSTAL GROWTH
Information
Patent Application
SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...
Publication number
20160233306
Publication date
Aug 11, 2016
MITSUBISHI CHEMICAL CORPORATION
Satoru NAGAO
C30 - CRYSTAL GROWTH
Information
Patent Application
CRYSTAL OF NITRIDE OF GROUP-13 METAL ON PERIODIC TABLE, AND METHOD...
Publication number
20150361587
Publication date
Dec 17, 2015
MITSUBISHI CHEMICAL CORPORATION
Yutaka MIKAWA
C30 - CRYSTAL GROWTH
Information
Patent Application
GALLIUM NITRIDE SUBSTRATE AND MANUFACTURING METHOD OF NITRIDE SEMIC...
Publication number
20150311068
Publication date
Oct 29, 2015
MITSUBISHI CHEMICAL CORPORATION
Yusuke TSUKADA
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
METHOD FOR PRODUCING NITRIDE CRYSTAL AND NITRIDE CRYSTAL
Publication number
20150247256
Publication date
Sep 3, 2015
MITSUBISHI CHEMICAL CORPORATION
Yutaka MIKAWA
C30 - CRYSTAL GROWTH
Information
Patent Application
METHOD FOR PRODUCING NITRIDE CRYSTAL AND NITRIDE CRYSTAL
Publication number
20130108537
Publication date
May 2, 2013
Yutaka MIKAWA
C30 - CRYSTAL GROWTH
Information
Patent Application
METHOD FOR PRODUCING NITRIDE CRYSTAL
Publication number
20120251431
Publication date
Oct 4, 2012
MITSUBISHI CHEMICAL CORPORATION
Hideo FUJISAWA
C30 - CRYSTAL GROWTH