Yutaka Ohta

Person

Gunma-ken, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method for analyzing impurities within silicon wafer
- Patent number 6,174,740
- Issue date Jan 16, 2001
- Shin-Etsu Handotai, Co., Ltd.
- Yutaka Ohta
- G01 - MEASURING TESTING
Information Patent Grant
Apparatus for growing silicon epitaxial layer
- Patent number 5,487,358
- Issue date Jan 30, 1996
- Shin-Etsu Handotai Co., Ltd.
- Yutaka Ohta
- C30 - CRYSTAL GROWTH
Information Patent Grant
Cylindrical apparatus for growth of epitaxial layers
- Patent number 5,441,571
- Issue date Aug 15, 1995
- Shin-Etsu Handotai Co., Ltd.
- Yutaka Ohta
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for production of extremely thin SOI film subs...
- Patent number 5,427,052
- Issue date Jun 27, 1995
- Shin-Etsu Handotai Co., Ltd.
- Yutaka Ohta
- G01 - MEASURING TESTING
Information Patent Grant
Process for growing silicon epitaxial layer
- Patent number 5,421,288
- Issue date Jun 6, 1995
- Shin-Etsu Handotai Co., Ltd.
- Yutaka Ohta
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of making a SOI film having a more uniform thickness in a SO...
- Patent number 5,393,370
- Issue date Feb 28, 1995
- Shin-Etsu Handotai Kabushiki Kaisha
- Yutaka Ohta
- G01 - MEASURING TESTING
Information Patent Grant
Apparatus for production of extremely thin SOI film substrate
- Patent number 5,376,215
- Issue date Dec 27, 1994
- Shin-Etsu Handotai Co., Ltd.
- Yutaka Ohta
- G01 - MEASURING TESTING
Information Patent Grant
Dielectrically isolated substrate and a process for producing the same
- Patent number 5,336,634
- Issue date Aug 9, 1994
- Shin-Etsu Handotui Co., Ltd.
- Masatake Katayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for controlling thickness of single crystal thin-film layer...
- Patent number 5,223,080
- Issue date Jun 29, 1993
- Shin-Etsu Handotai Co., Ltd.
- Yutaka Ohta
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for production of dielectric-separation substrate
- Patent number 5,183,783
- Issue date Feb 2, 1993
- Shin-Etsu Handotai Co., Ltd.
- Yutaka Ohta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for production of dielectric-separation substrate
- Patent number 5,124,274
- Issue date Jun 23, 1992
- Shin-Etsu Handotai Co., Ltd.
- Konomu Ohki
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor producing apparatus and producing method for epitaxia...
- Publication number 20010014544
- Publication date Aug 16, 2001
- Shin-Etsu Handotai, Co., Ltd.
- Norimichi Tanaka
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Yutaka Ohta

Person

Patents Grantslast 30 patents

Method for analyzing impurities within silicon wafer

Apparatus for growing silicon epitaxial layer

Cylindrical apparatus for growth of epitaxial layers

Method and apparatus for production of extremely thin SOI film subs...

Process for growing silicon epitaxial layer

Method of making a SOI film having a more uniform thickness in a SO...

Apparatus for production of extremely thin SOI film substrate

Dielectrically isolated substrate and a process for producing the same

Method for controlling thickness of single crystal thin-film layer...

Method for production of dielectric-separation substrate

Method for production of dielectric-separation substrate

Patents Applicationslast 30 patents

Semiconductor producing apparatus and producing method for epitaxia...