Yuuichi Takeuchi

Person

Chita, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 8,604,540
- Issue date Dec 10, 2013
- Denso Corporation
- Rajesh Kumar Malhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method of manufacturing th...
- Patent number 8,575,648
- Issue date Nov 5, 2013
- Denso Corporation
- Yuuichi Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device
- Patent number RE43840
- Issue date Dec 4, 2012
- Denso Corporation
- Mitsuhiro Kataoka
- 257 - Active solid-state devices
Information Patent Grant
Wide band gap semiconductor device including junction field effect...
- Patent number 8,274,086
- Issue date Sep 25, 2012
- Denso Corporation
- Rajesh Kumar Malhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing silicon carbide semiconductor device
- Patent number 7,989,231
- Issue date Aug 2, 2011
- Denso Corporation
- Atsuya Akiba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and related manufacturing method
- Patent number 7,825,449
- Issue date Nov 2, 2010
- Denso Corporation
- Naohiro Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing silicon carbide semiconductor apparatus
- Patent number 7,763,543
- Issue date Jul 27, 2010
- Denso Corporation
- Masatake Nagaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device having trench in sili...
- Patent number 7,241,694
- Issue date Jul 10, 2007
- Denso Corporation
- Yuuichi Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing silicon carbide semiconductor device
- Patent number 7,078,329
- Issue date Jul 18, 2006
- Denso Corporation
- Takeshi Endou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device
- Patent number 6,853,006
- Issue date Feb 8, 2005
- Denso Corporation
- Mitsuhiro Kataoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing SiC semiconductor device having double oxid...
- Patent number 5,723,376
- Issue date Mar 3, 1998
- Nippondenso Co., Ltd.
- Yuuichi Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a groove with a curved part formed on i...
- Patent number 5,698,880
- Issue date Dec 16, 1997
- Nippondenso Co., Ltd.
- Shigeki Takahashi

Patents Applicationslast 30 patents

Information Patent Application
SWITCHING DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20130105889
- Publication date May 2, 2013
- Denso Corporation
- Hirokazu FUJIWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having JFET and method for manufacturing the same
- Publication number 20110156052
- Publication date Jun 30, 2011
- DENSO CORPORATION
- Rajesh Kumar MALHAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING TH...
- Publication number 20110156054
- Publication date Jun 30, 2011
- DENSO CORPORATION
- Yuuichi Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20110133211
- Publication date Jun 9, 2011
- DENSO CORPORATION
- Rajesh Kumar MALHAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing silicon carbide seminconductor device
- Publication number 20100233832
- Publication date Sep 16, 2010
- DENSO CORPORATION
- Atsuya Akiba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Wide band gap semiconductor device including junction field effect...
- Publication number 20100025693
- Publication date Feb 4, 2010
- DENSO CORPORATION
- Rajesh Kumar Malhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for manufacturing silicon carbide semiconductor apparatus
- Publication number 20090124060
- Publication date May 14, 2009
- DENSO CORPORATION
- Masatake Nagaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon carbide semiconductor device and related manufacturing method
- Publication number 20090114969
- Publication date May 7, 2009
- DENSO CORPORATION
- Naohiro Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having SiC substrate and method for manufactur...
- Publication number 20060273323
- Publication date Dec 7, 2006
- DENSO CORPORATION
- Takeo Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for manufacturing semiconductor device having trench in sili...
- Publication number 20050233539
- Publication date Oct 20, 2005
- Yuuichi Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing silicon carbide semiconductor device
- Publication number 20040214453
- Publication date Oct 28, 2004
- Takeshi Endou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon carbide semiconductor device
- Publication number 20040051136
- Publication date Mar 18, 2004
- Mitsuhiro Kataoka
- H01 - BASIC ELECTRIC ELEMENTS

Yuuichi Takeuchi

Person

Patents Grantslast 30 patents

Semiconductor device and method of manufacturing the same

Silicon carbide semiconductor device and method of manufacturing th...

Silicon carbide semiconductor device

Wide band gap semiconductor device including junction field effect...

Method of manufacturing silicon carbide semiconductor device

Silicon carbide semiconductor device and related manufacturing method

Method for manufacturing silicon carbide semiconductor apparatus

Method for manufacturing semiconductor device having trench in sili...

Method of manufacturing silicon carbide semiconductor device

Silicon carbide semiconductor device

Method of manufacturing SiC semiconductor device having double oxid...

Semiconductor device having a groove with a curved part formed on i...

Patents Applicationslast 30 patents

SWITCHING DEVICE AND METHOD FOR MANUFACTURING THE SAME

Semiconductor device having JFET and method for manufacturing the same

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING TH...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Method of manufacturing silicon carbide seminconductor device

Wide band gap semiconductor device including junction field effect...

Method for manufacturing silicon carbide semiconductor apparatus

Silicon carbide semiconductor device and related manufacturing method

Semiconductor device having SiC substrate and method for manufactur...

Method for manufacturing semiconductor device having trench in sili...

Method of manufacturing silicon carbide semiconductor device

Silicon carbide semiconductor device