Yuuki ENATSU

Person

Ushiku-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
n-Type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitri...
- Patent number 12,351,943
- Issue date Jul 8, 2025
- Mitsubishi Chemical Corporation
- Kenji Iso
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
GaN substrate wafer and method for manufacturing same
- Patent number 12,288,686
- Issue date Apr 29, 2025
- Mitsubishi Chemical Corporation
- Kenji Iso
- C30 - CRYSTAL GROWTH
Information Patent Grant
N-type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitri...
- Patent number 11,987,903
- Issue date May 21, 2024
- Mitsubishi Chemical Corporation
- Kenji Iso
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Periodic table group 13 metal nitride crystals and method for manuf...
- Patent number 10,570,530
- Issue date Feb 25, 2020
- Mitsubishi Chemical Corporation
- Yuuki Enatsu
- C30 - CRYSTAL GROWTH
Information Patent Grant
C-plane GaN substrate
- Patent number 10,224,201
- Issue date Mar 5, 2019
- Mitsubishi Chemical Corporation
- Kenji Iso
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
C-plane GaN substrate
- Patent number 10,177,217
- Issue date Jan 8, 2019
- Mitsubishi Chemical Corporation
- Kenji Iso
- C30 - CRYSTAL GROWTH
Information Patent Grant
Periodic table group 13 metal nitride crystals and method for manuf...
- Patent number 10,023,976
- Issue date Jul 17, 2018
- Mitsubishi Chemical Corporation
- Yuuki Enatsu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Periodic table group 13 metal nitride crystals and method for manuf...
- Patent number 9,840,791
- Issue date Dec 12, 2017
- MITSUBISHI CHEMICAL CORPORATION
- Yuuki Enatsu
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
n-TYPE GaN CRYSTAL, GaN WAFER, AND GaN CRYSTAL, GaN WAFER AND NITRI...
- Publication number 20240279844
- Publication date Aug 22, 2024
- MITSUBISHI CHEMICAL CORPORATION
- Kenji ISO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
PARTICLES AND METHOD FOR PRODUCING SAME, AND SECONDARY BATTERY AND...
- Publication number 20240282921
- Publication date Aug 22, 2024
- MITSUBISHI CHEMICAL CORPORATION
- Yuuki ENATSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN CRYSTAL AND GAN SUBSTRATE
- Publication number 20230203711
- Publication date Jun 29, 2023
- MITSUBISHI CHEMICAL CORPORATION
- Yusuke TSUKADA
- C30 - CRYSTAL GROWTH
Information Patent Application
GAN SUBSTRATE WAFER AND PRODUCTION METHOD FOR SAME
- Publication number 20220084820
- Publication date Mar 17, 2022
- MITSUBISHI CHEMICAL CORPORATION
- Yuuki ENATSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN SUBSTRATE WAFER AND METHOD FOR MANUFACTURING SAME
- Publication number 20220084819
- Publication date Mar 17, 2022
- MITSUBISHI CHEMICAL CORPORATION
- Kenji ISO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN CRYSTAL AND SUBSTRATE
- Publication number 20210384336
- Publication date Dec 9, 2021
- MITSUBISHI CHEMICAL CORPORATION
- Yuuki ENATSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
n-TYPE GaN CRYSTAL, GaN WAFER, AND GaN CRYSTAL, GaN WAFER AND NITRI...
- Publication number 20210164127
- Publication date Jun 3, 2021
- MITSUBISHI CHEMICAL CORPORATION
- Kenji ISO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERIODIC TABLE GROUP 13 METAL NITRIDE CRYSTALS AND METHOD FOR MANUF...
- Publication number 20180258552
- Publication date Sep 13, 2018
- MITSUBISHI CHEMICAL CORPORATION
- Yuuki ENATSU
- C30 - CRYSTAL GROWTH
Information Patent Application
PERIODIC TABLE GROUP 13 METAL NITRIDE CRYSTALS AND METHOD FOR MANUF...
- Publication number 20180057960
- Publication date Mar 1, 2018
- MITSUBISHI CHEMICAL CORPORATION
- Yuuki ENATSU
- C30 - CRYSTAL GROWTH
Information Patent Application
C-PLANE GaN SUBSTRATE
- Publication number 20170352721
- Publication date Dec 7, 2017
- MITSUBISHI CHEMICAL CORPORATION
- Kenji ISO
- C30 - CRYSTAL GROWTH
Information Patent Application
C-PLANE GaN SUBSTRATE
- Publication number 20170338112
- Publication date Nov 23, 2017
- MITSUBISHI CHEMICAL CORPORATION
- Kenji ISO
- C30 - CRYSTAL GROWTH
Information Patent Application
PERIODIC TABLE GROUP 13 METAL NITRIDE CRYSTALS AND METHOD FOR MANUF...
- Publication number 20150093318
- Publication date Apr 2, 2015
- MITSUBISHI CHEMICAL CORPORATION
- Yuuki ENATSU
- C30 - CRYSTAL GROWTH

Yuuki ENATSU

Person

Patents Grantslast 30 patents

n-Type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitri...

GaN substrate wafer and method for manufacturing same

N-type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitri...

Periodic table group 13 metal nitride crystals and method for manuf...

C-plane GaN substrate

C-plane GaN substrate

Periodic table group 13 metal nitride crystals and method for manuf...

Periodic table group 13 metal nitride crystals and method for manuf...

Patents Applicationslast 30 patents

n-TYPE GaN CRYSTAL, GaN WAFER, AND GaN CRYSTAL, GaN WAFER AND NITRI...

PARTICLES AND METHOD FOR PRODUCING SAME, AND SECONDARY BATTERY AND...

GAN CRYSTAL AND GAN SUBSTRATE

GAN SUBSTRATE WAFER AND PRODUCTION METHOD FOR SAME

GAN SUBSTRATE WAFER AND METHOD FOR MANUFACTURING SAME

GAN CRYSTAL AND SUBSTRATE

n-TYPE GaN CRYSTAL, GaN WAFER, AND GaN CRYSTAL, GaN WAFER AND NITRI...

PERIODIC TABLE GROUP 13 METAL NITRIDE CRYSTALS AND METHOD FOR MANUF...

PERIODIC TABLE GROUP 13 METAL NITRIDE CRYSTALS AND METHOD FOR MANUF...

C-PLANE GaN SUBSTRATE

C-PLANE GaN SUBSTRATE

PERIODIC TABLE GROUP 13 METAL NITRIDE CRYSTALS AND METHOD FOR MANUF...