Yves Campidelli

Person

Grenoble, FR

People

Patents Grantslast 30 patents

Information Patent Grant
Cyclic epitaxy process to form air gap isolation for a bipolar tran...
- Patent number 10,186,605
- Issue date Jan 22, 2019
- STMicroelectronics (Crolles 2) SAS
- Alexis Gauthier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating NMOS and PMOS transistors on a substrate of...
- Patent number 9,412,589
- Issue date Aug 9, 2016
- STMicroelectronics (Crolles 2) SAS
- David Barge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing at least one deep trench isolation
- Patent number 8,975,154
- Issue date Mar 10, 2015
- STMicroelectronics S.A.
- Didier Dutartre
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for depositing a silicon oxide layer of same thickness on si...
- Patent number 8,603,887
- Issue date Dec 10, 2013
- STMicroelectronics S.A.
- Didier Dutartre
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single-crystal semiconductor layer with heteroatomic macro-network
- Patent number 8,263,965
- Issue date Sep 11, 2012
- STMicroelectronics (Crolles 2) SAS
- Yves Campidelli
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for manufacturing a structure of semiconductor-on-insulator...
- Patent number 8,178,426
- Issue date May 15, 2012
- STMicroelectronics S.A.
- Aomar Halimaoui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single-crystal semiconductor layer with heteroatomic macronetwork
- Patent number 7,884,352
- Issue date Feb 8, 2011
- STMicroelectronics S.A.
- Daniel Bensahel
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Electronic component manufacturing method
- Patent number 7,879,679
- Issue date Feb 1, 2011
- STMicroelectronics Crolles 2 SAS
- Oliver Kermarrec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single-crystal layer on a dielectric layer
- Patent number 7,749,817
- Issue date Jul 6, 2010
- STMicroelectronics (Crolles) SAS
- Olivier Kermarec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single-crystal layer on a dielectric layer
- Patent number 7,547,914
- Issue date Jun 16, 2009
- STMicroelectronics (Crolles 2) SAS
- Olivier Kermarec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heteroatomic single-crystal layers
- Patent number 7,381,267
- Issue date Jun 3, 2008
- STMicroelectronics S.A.
- Daniel Bensahel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a semiconductor device comprising a gate diel...
- Patent number 7,129,563
- Issue date Oct 31, 2006
- STMicroelectronics S.A.
- Vincent Cosnier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a device comprising layers of planes of quantum dots
- Patent number 6,690,027
- Issue date Feb 10, 2004
- France Telecom
- Daniel Bensahel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming of quantum dots
- Patent number 6,596,555
- Issue date Jul 22, 2003
- STMicroelectronics S.A.
- Daniel Bensahel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for obtaining a layer of single-crystal germanium on a subs...
- Patent number 6,537,370
- Issue date Mar 25, 2003
- France Telecom
- Caroline Hernandez
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for obtaining a layer of single-crystal germanium or silico...
- Patent number 6,429,098
- Issue date Aug 6, 2002
- France Telecom
- Daniel Bensahel
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for fabricating a planar heterostructure
- Patent number 6,399,502
- Issue date Jun 4, 2002
- France Telecom
- Caroline Hernandez
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Process for nitriding the gate oxide layer of a semiconductor devic...
- Patent number 6,372,581
- Issue date Apr 16, 2002
- France Telecom
- Daniel Bensahel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for restricting interdiffusion in a semiconductor device wi...
- Patent number 6,255,149
- Issue date Jul 3, 2001
- France Telecom
- Daniel Bensahel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for obtaining a layer of single-crystal germanium or silico...
- Patent number 6,117,750
- Issue date Sep 12, 2000
- France Telecom
- Daniel Bensahel
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for the deposition by epitaxy of a doped material
- Patent number 4,847,216
- Issue date Jul 11, 1989
- Centre National d'Etudes des Telecommunications
- Francois A. d'Avitaya
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process and apparatus for the growth of films of silicides of refra...
- Patent number 4,643,914
- Issue date Feb 17, 1987
- Francois Arnaud D'Avitaya
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR FABRICATING NMOS AND PMOS TRANSISTORS ON A SUBSTRATE OF...
- Publication number 20150108576
- Publication date Apr 23, 2015
- STMicroelectronics (Crolles 2) SAS
- David BARGE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR PRODUCING AT LEAST ONE DEEP TRENCH ISOLATION
- Publication number 20130095636
- Publication date Apr 18, 2013
- STMicroelectronics (Crolles 2) SAS
- Didier Dutartre
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DEPOSITING A SILICON OXIDE LAYER OF SAME THICKNESS ON SI...
- Publication number 20130072032
- Publication date Mar 21, 2013
- STMicroelectronics S.A.
- Didier Dutartre
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR FORMING AN EPITAXIAL LAYER, IN PARTICULAR ON THE SOURCE...
- Publication number 20120252174
- Publication date Oct 4, 2012
- STMICROELECTRONICS (CROLLES 2) SAS
- Didier Dutartre
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE-CRYSTAL SEMICONDUCTOR LAYER WITH HETEROATOMIC MACRO-NETWORK
- Publication number 20110108801
- Publication date May 12, 2011
- STMicroelectronics (Crolles 2) SAS
- Daniel Bensahel
- G02 - OPTICS
Information Patent Application
ELECTRONIC COMPONENT MANUFACTURING METHOD
- Publication number 20080239625
- Publication date Oct 2, 2008
- STMicroelectronics CROLLES 2 SAS
- Oliver Kermarrec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A STRUCTURE OF SEMICONDUCTOR-ON-INSULATOR...
- Publication number 20080197447
- Publication date Aug 21, 2008
- STMicroelectronics S.A.
- Aomar Halimaoui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Single-crystal layer on a dielectric layer
- Publication number 20070278494
- Publication date Dec 6, 2007
- STMicroelectronics (Crolles 2) SAS
- Olivier Kermarec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Single-Crystal Semiconductor Layer with Heteroatomic Macronetwork
- Publication number 20070248818
- Publication date Oct 25, 2007
- STMicroelectronics S.A.
- Daniel Bensahel
- G02 - OPTICS
Information Patent Application
Single-crystal layer on a dielectric layer
- Publication number 20070228384
- Publication date Oct 4, 2007
- STMicroelectronics (Crolles 2) SAS
- Olivier Kermarec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating a semiconductor device comprising a gate diel...
- Publication number 20040256699
- Publication date Dec 23, 2004
- STMicroelectronics S.A.
- Vincent Cosnier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Heteroatomic single-crystal layers
- Publication number 20040250752
- Publication date Dec 16, 2004
- Daniel Bensahel
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of cleaning a semiconductor process chamber
- Publication number 20030221708
- Publication date Dec 4, 2003
- Chun-Hao Ly
- B08 - CLEANING
Information Patent Application
Forming of quantum dots
- Publication number 20020039833
- Publication date Apr 4, 2002
- STMicroelectronics S.A.
- Daniel Bensahel
- B82 - NANO-TECHNOLOGY

Yves Campidelli

Person

Patents Grantslast 30 patents

Cyclic epitaxy process to form air gap isolation for a bipolar tran...

Method for fabricating NMOS and PMOS transistors on a substrate of...

Process for producing at least one deep trench isolation

Method for depositing a silicon oxide layer of same thickness on si...

Single-crystal semiconductor layer with heteroatomic macro-network

Method for manufacturing a structure of semiconductor-on-insulator...

Single-crystal semiconductor layer with heteroatomic macronetwork

Electronic component manufacturing method

Single-crystal layer on a dielectric layer

Single-crystal layer on a dielectric layer

Heteroatomic single-crystal layers

Method of fabricating a semiconductor device comprising a gate diel...

Method for making a device comprising layers of planes of quantum dots

Forming of quantum dots

Process for obtaining a layer of single-crystal germanium on a subs...

Process for obtaining a layer of single-crystal germanium or silico...

Process for fabricating a planar heterostructure

Process for nitriding the gate oxide layer of a semiconductor devic...

Process for restricting interdiffusion in a semiconductor device wi...

Process for obtaining a layer of single-crystal germanium or silico...

Process for the deposition by epitaxy of a doped material

Process and apparatus for the growth of films of silicides of refra...

Patents Applicationslast 30 patents

METHOD FOR FABRICATING NMOS AND PMOS TRANSISTORS ON A SUBSTRATE OF...

PROCESS FOR PRODUCING AT LEAST ONE DEEP TRENCH ISOLATION

METHOD FOR DEPOSITING A SILICON OXIDE LAYER OF SAME THICKNESS ON SI...

PROCESS FOR FORMING AN EPITAXIAL LAYER, IN PARTICULAR ON THE SOURCE...

SINGLE-CRYSTAL SEMICONDUCTOR LAYER WITH HETEROATOMIC MACRO-NETWORK

ELECTRONIC COMPONENT MANUFACTURING METHOD

METHOD FOR MANUFACTURING A STRUCTURE OF SEMICONDUCTOR-ON-INSULATOR...

Single-crystal layer on a dielectric layer

Single-Crystal Semiconductor Layer with Heteroatomic Macronetwork

Single-crystal layer on a dielectric layer

Method of fabricating a semiconductor device comprising a gate diel...

Heteroatomic single-crystal layers

Method of cleaning a semiconductor process chamber

Forming of quantum dots