Yves-Matthieu Le Vaillant

Person

Crolles, FR

People

Patents Grantslast 30 patents

Information Patent Grant
Method for modifying an initial stress state of an active layer to...
- Patent number 9,240,343
- Issue date Jan 19, 2016
- Soitec
- Yves-Matthieu Le Vaillant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for transferring an epitaxial layer
- Patent number 7,981,768
- Issue date Jul 19, 2011
- S.O.I. Tec Silicon on Insulator Technologies
- Yves-Matthieu Le Vaillant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate with determinate thermal expansion coefficient
- Patent number 7,887,936
- Issue date Feb 15, 2011
- S.O.I. Tec Silicon on Insulator Technologies
- Yves-Matthieu Le Vaillant
- C30 - CRYSTAL GROWTH
Information Patent Grant
Tools and methods for disuniting semiconductor wafers
- Patent number 7,740,735
- Issue date Jun 22, 2010
- S.O.I. Tec Silicon on Insulator Technologies
- Sebastien Kerdiles
- G01 - MEASURING TESTING
Information Patent Grant
Wafer and method of producing a substrate by transfer of a layer th...
- Patent number 7,645,684
- Issue date Jan 12, 2010
- S.O.I. Tec Silicon on Insulator Technologies
- Fabrice Letertre
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer and method of producing a substrate by transfer of a layer th...
- Patent number 7,535,115
- Issue date May 19, 2009
- S.O.I. Tec Silicon on Insulator Technologies
- Fabrice Letertre
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for adjusting the strain on the surface or inside a substra...
- Patent number 7,473,620
- Issue date Jan 6, 2009
- S.O.I. Tec Silicon on Insulator Technologies
- Yves-Matthieu Le Vaillant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating a wafer structure having a strained silicon...
- Patent number 7,465,646
- Issue date Dec 16, 2008
- S.O.I. Tec Silicon on Insulator Technologies
- Yves-Matthieu Le Vaillant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for producing a semiconductor entity
- Patent number 7,439,160
- Issue date Oct 21, 2008
- S.O.I. Tec Silicon on Insulator Technologies
- Yves Matthieu Le Vaillant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Recycling a wafer comprising a buffer layer, after having separated...
- Patent number 7,378,729
- Issue date May 27, 2008
- S.O.I. Tec Silicon on Insulator Technologies
- Bruno Ghyselen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Recycling of a wafer comprising a multi-layer structure after takin...
- Patent number 7,256,075
- Issue date Aug 14, 2007
- S.O.I. Tec Silicon on Insulator Technologies
- Bruno Ghyselen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tools and methods for disuniting semiconductor wafers
- Patent number 7,187,162
- Issue date Mar 6, 2007
- S.O.I.Tec Silicon on Insulator Technologies S.A.
- Sebastien Kerdiles
- G01 - MEASURING TESTING
Information Patent Grant
Methods for producing a semiconductor entity
- Patent number 7,176,554
- Issue date Feb 13, 2007
- S.O.I.Tec Silicon on Insulator Technologies S.A.
- Yves Matthieu Le Vaillant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer and method of producing a substrate by transfer of a layer th...
- Patent number 7,008,859
- Issue date Mar 7, 2006
- S.O.I.Tec Silicon on Insulator Technologies S.A.
- Fabrice Letertre
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SYSTEM FOR DEFORMING AN EFFECTIVE STRUCTURE
- Publication number 20250048939
- Publication date Feb 6, 2025
- NELUMBO DIGITAL
- Yves-Matthieu Le Vaillant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MODIFYING AN INITAIL STRESS STATE OF AN ACTIVE LAYER TO...
- Publication number 20150249033
- Publication date Sep 3, 2015
- SOITEC
- Yves-Matthieu Le Vaillant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE WITH DETERMINATE THERMAL EXPANSION COEFFICIENT
- Publication number 20110094668
- Publication date Apr 28, 2011
- S.O.I.Tec Silicon on Insulator Technologies
- Yves-Matthieu Le Vaillant
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR TRANSFERRING AN EPITAXIAL LAYER
- Publication number 20110008948
- Publication date Jan 13, 2011
- S.O.I. Tec Silicon on Insulator Technologies Parc Technologique des Fontaines
- Yves-Matthieu Le Vaillant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF RECYCLING AN EPITAXIED DONOR WAFER
- Publication number 20100167500
- Publication date Jul 1, 2010
- S.O.TEC SILICON ON INSULATOR TECHNOLOGIES
- Nabil Chhaimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAFER AND METHOD OF PRODUCING A SUBSTRATE BY TRANSFER OF A LAYER TH...
- Publication number 20080248631
- Publication date Oct 9, 2008
- S.O.I.Tec Silicon on Insulator Technologies
- Fabrice Letertre
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for adjusting the strain on the surface or inside a substra...
- Publication number 20070166968
- Publication date Jul 19, 2007
- Yves-Matthieu Le Vaillant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR PRODUCING A SEMICONDUCTOR ENTITY
- Publication number 20070104240
- Publication date May 10, 2007
- S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES S.A.
- Yves Matthieu Le Vaillant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TOOLS AND METHODS FOR DISUNITING SEMICONDUCTOR WAFERS
- Publication number 20070093039
- Publication date Apr 26, 2007
- S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES S.A.
- Sebastien Kerdiles
- G01 - MEASURING TESTING
Information Patent Application
Method of fabricating a structure with an oxide layer of a desired...
- Publication number 20060270244
- Publication date Nov 30, 2006
- Nicolas Daval
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Substrate with determinate thermal expansion coefficient
- Publication number 20060240644
- Publication date Oct 26, 2006
- Yves-Matthieu Le Vaillant
- C30 - CRYSTAL GROWTH
Information Patent Application
Substrate with refractive index matching
- Publication number 20060197096
- Publication date Sep 7, 2006
- Sebastien Kerdiles
- G02 - OPTICS
Information Patent Application
Methods for fabricating a wafer structure having a strained silicon...
- Publication number 20060081847
- Publication date Apr 20, 2006
- Yves-Matthieu Le Vaillant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Recycling a wafer comprising a buffer layer, after having separated...
- Publication number 20060076578
- Publication date Apr 13, 2006
- S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES S.A.
- Bruno Ghyselen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Wafer and method of producing a substrate by transfer of a layer th...
- Publication number 20060060922
- Publication date Mar 23, 2006
- S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES S.A.
- Fabrice Letertre
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for producing a semiconductor entity
- Publication number 20050191779
- Publication date Sep 1, 2005
- Yves Mathieu Le Vaillant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Recycling of a wafer comprising a multi-layer structure after takin...
- Publication number 20050170611
- Publication date Aug 4, 2005
- Bruno Ghyselen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Recycling of a wafer comprising a multi-layer structure after takin...
- Publication number 20050167002
- Publication date Aug 4, 2005
- Bruno Ghyselen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Tools and methods for disuniting semiconductor wafers
- Publication number 20040166653
- Publication date Aug 26, 2004
- Sebastien Kerdiles
- G01 - MEASURING TESTING
Information Patent Application
Wafer and method of producing a substrate by transfer of a layer th...
- Publication number 20040121558
- Publication date Jun 24, 2004
- S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES S.A.
- Fabrice Letertre
- H01 - BASIC ELECTRIC ELEMENTS

Yves-Matthieu Le Vaillant

Person

Patents Grantslast 30 patents

Method for modifying an initial stress state of an active layer to...

Method for transferring an epitaxial layer

Substrate with determinate thermal expansion coefficient

Tools and methods for disuniting semiconductor wafers

Wafer and method of producing a substrate by transfer of a layer th...

Wafer and method of producing a substrate by transfer of a layer th...

Process for adjusting the strain on the surface or inside a substra...

Methods for fabricating a wafer structure having a strained silicon...

Methods for producing a semiconductor entity

Recycling a wafer comprising a buffer layer, after having separated...

Recycling of a wafer comprising a multi-layer structure after takin...

Tools and methods for disuniting semiconductor wafers

Methods for producing a semiconductor entity

Wafer and method of producing a substrate by transfer of a layer th...

Patents Applicationslast 30 patents

SYSTEM FOR DEFORMING AN EFFECTIVE STRUCTURE

METHOD FOR MODIFYING AN INITAIL STRESS STATE OF AN ACTIVE LAYER TO...

SUBSTRATE WITH DETERMINATE THERMAL EXPANSION COEFFICIENT

METHOD FOR TRANSFERRING AN EPITAXIAL LAYER

METHOD OF RECYCLING AN EPITAXIED DONOR WAFER

WAFER AND METHOD OF PRODUCING A SUBSTRATE BY TRANSFER OF A LAYER TH...

Process for adjusting the strain on the surface or inside a substra...

METHODS FOR PRODUCING A SEMICONDUCTOR ENTITY

TOOLS AND METHODS FOR DISUNITING SEMICONDUCTOR WAFERS

Method of fabricating a structure with an oxide layer of a desired...

Substrate with determinate thermal expansion coefficient

Substrate with refractive index matching

Methods for fabricating a wafer structure having a strained silicon...

Recycling a wafer comprising a buffer layer, after having separated...

Wafer and method of producing a substrate by transfer of a layer th...

Methods for producing a semiconductor entity

Recycling of a wafer comprising a multi-layer structure after takin...

Recycling of a wafer comprising a multi-layer structure after takin...

Tools and methods for disuniting semiconductor wafers

Wafer and method of producing a substrate by transfer of a layer th...