Zempei Kawazu

Person

Itami, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method for manufacturing SiC epitaxial wafer
- Patent number 9,988,738
- Issue date Jun 5, 2018
- Mitsubishi Electric Corporation
- Nobuyuki Tomita
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single-crystal 4H-SiC substrate
- Patent number 9,903,048
- Issue date Feb 27, 2018
- Mitsubishi Electric Corporation
- Akihito Ohno
- C30 - CRYSTAL GROWTH
Information Patent Grant
Substrate support and semiconductor manufacturing apparatus
- Patent number 9,824,911
- Issue date Nov 21, 2017
- Mitsubishi Electric Corporation
- Akihito Ohno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a single-crystal 4H—SiC substrate
- Patent number 9,752,254
- Issue date Sep 5, 2017
- Mitsubishi Electric Corporation
- Akihito Ohno
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single-crystal 4H-SiC substrate
- Patent number 9,422,640
- Issue date Aug 23, 2016
- Mitsubishi Electric Corporation
- Akihito Ohno
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of manufacturing nitride semiconductor device
- Patent number 7,378,351
- Issue date May 27, 2008
- Mitsubishi Denki Kabushiki Kaisha
- Katsuomi Shiozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor laser
- Patent number 7,151,004
- Issue date Dec 19, 2006
- Mitsubishi Denki Kabushiki Kaisha
- Yoshihisa Tashiro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor device
- Patent number 6,737,288
- Issue date May 18, 2004
- Mitsubishi Denki Kabushiki Kaisha
- Zempei Kawazu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including Gallium nitride layer
- Patent number 5,880,485
- Issue date Mar 9, 1999
- Mitsubishi Denki Kabushiki Kaisha
- Diethard Marx
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including T1 GaAs layer
- Patent number 5,841,156
- Issue date Nov 24, 1998
- Mitsubishi Denki Kabushiki Kaisha
- Yasutomo Kajikawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor light emitting device
- Patent number 5,764,673
- Issue date Jun 9, 1998
- Mitsubishi Denki Kabushiki Kaisha
- Zempei Kawazu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heteroepitaxial semiconductor device including silicon substrate, G...
- Patent number 5,760,426
- Issue date Jun 2, 1998
- Mitsubishi Denki Kabushiki Kaisha
- Diethard Marx
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light emitting diode producing visible light
- Patent number 5,739,552
- Issue date Apr 14, 1998
- Mitsubishi Denki Kabushiki Kaisha
- Tatsuya Kimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser producing short wavelength light
- Patent number 5,701,321
- Issue date Dec 23, 1997
- Mitsubishi Denki Kabushiki Kaisha
- Norio Hayafuji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Material supplying apparatus
- Patent number 5,582,647
- Issue date Dec 10, 1996
- Mitsubishi Denki Kabushiki Kaisha
- Manabu Kato
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor light emitting element with II-VI and III-V compounds
- Patent number 5,539,239
- Issue date Jul 23, 1996
- Mitsubishi Denki Kabushiki Kaisha
- Zempei Kawazu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making II-VI semiconductor infrared light detector
- Patent number 5,535,699
- Issue date Jul 16, 1996
- Mitsubishi Denki Kabushiki Kaisha
- Zempei Kawazu
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR MANUFACTURING A SINGLE-CRYSTAL 4H-SiC SUBSTRATE
- Publication number 20160298262
- Publication date Oct 13, 2016
- Mitsubishi Electric Corporation
- Akihito Ohno
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE-CRYSTAL 4H-SiC SUBSTRATE
- Publication number 20160298264
- Publication date Oct 13, 2016
- Mitsubishi Electric Corporation
- Akihito Ohno
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC EPITAXIAL WAFER PRODUCTION METHOD
- Publication number 20150354090
- Publication date Dec 10, 2015
- MITSUBISHI ELECTRIC CORPORATION
- Nobuyuki TOMITA
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE-CRYSTAL 4H-SiC SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20140295136
- Publication date Oct 2, 2014
- Mitsubishi Electric Corporation
- Akihito Ohno
- C30 - CRYSTAL GROWTH
Information Patent Application
SUBSTRATE SUPPORT AND SEMICONDUCTOR MANUFACTURING APPARATUS
- Publication number 20130327274
- Publication date Dec 12, 2013
- Mitsubishi Electric Corporation
- Akihito Ohno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20130109134
- Publication date May 2, 2013
- Mitsubishi Electric Corporation
- Susumu HATAKENAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR LASER
- Publication number 20100003778
- Publication date Jan 7, 2010
- Mitsubishi Electric Corporation
- Hitoshi Tada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing nitride semiconductor device
- Publication number 20060003490
- Publication date Jan 5, 2006
- Mitsubishi Denki Kabushiki Kaisha
- Katsuomi Shiozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating semiconductor laser
- Publication number 20040165633
- Publication date Aug 26, 2004
- Mitsubishi Denki Kabushiki Kaisha
- Yoshihisa Tashiro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating a semiconductor device
- Publication number 20020175343
- Publication date Nov 28, 2002
- Mitsubishi Denki Kabushiki Kaisha
- Zempei Kawazu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor laser device and method for fabricating the same
- Publication number 20020075923
- Publication date Jun 20, 2002
- Yoshihisa Tashiro
- H01 - BASIC ELECTRIC ELEMENTS

Zempei Kawazu

Person

Patents Grantslast 30 patents

Method for manufacturing SiC epitaxial wafer

Single-crystal 4H-SiC substrate

Substrate support and semiconductor manufacturing apparatus

Method for manufacturing a single-crystal 4H—SiC substrate

Single-crystal 4H-SiC substrate

Method of manufacturing nitride semiconductor device

Method of fabricating semiconductor laser

Method for fabricating a semiconductor device

Semiconductor device including Gallium nitride layer

Semiconductor device including T1 GaAs layer

Semiconductor light emitting device

Heteroepitaxial semiconductor device including silicon substrate, G...

Semiconductor light emitting diode producing visible light

Semiconductor laser producing short wavelength light

Material supplying apparatus

Semiconductor light emitting element with II-VI and III-V compounds

Method of making II-VI semiconductor infrared light detector

Patents Applicationslast 30 patents

METHOD FOR MANUFACTURING A SINGLE-CRYSTAL 4H-SiC SUBSTRATE

SINGLE-CRYSTAL 4H-SiC SUBSTRATE

SIC EPITAXIAL WAFER PRODUCTION METHOD

SINGLE-CRYSTAL 4H-SiC SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME

SUBSTRATE SUPPORT AND SEMICONDUCTOR MANUFACTURING APPARATUS

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

METHOD OF MANUFACTURING SEMICONDUCTOR LASER

Method of manufacturing nitride semiconductor device

Method of fabricating semiconductor laser

Method for fabricating a semiconductor device

Semiconductor laser device and method for fabricating the same