Zengyi He

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Shanghai, CN

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Patents Grantslast 30 patents

Information Patent Grant
Method for preventing gate oxide damage of a trench MOSFET during w...
- Patent number 8,084,304
- Issue date Dec 27, 2011
- Alpha & Omega Semiconductor, Inc.
- Mengyu Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOSFET with an ONO insulating layer sandwiched between an ES...
- Patent number 7,728,385
- Issue date Jun 1, 2010
- Alpha and Omega Semiconductor, Ltd.
- Mengyu Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for preventing gate oxide damage of a trench MOSFET during w...
- Patent number 7,585,705
- Issue date Sep 8, 2009
- Alpha & Omega Semiconductor, Inc.
- Mengyu Pan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR PREPARING SHIELDED GATE SEMICONDUCTOR DEVICE STRUCTURE,...
- Publication number 20240274683
- Publication date Aug 15, 2024
- WILL SEMICONDUCTOR (SHANGHAI) CO. LTD.
- Shuangshen LE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Preventing Gate Oxide Damage of a Trench MOSFET during W...
- Publication number 20110018054
- Publication date Jan 27, 2011
- Mengyu Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Preventing Gate Oxide Damage of a Trench MOSFET during W...
- Publication number 20090278199
- Publication date Nov 12, 2009
- Mengyu Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for preventing gate oxide damage of a trench MOSFET during w...
- Publication number 20090140333
- Publication date Jun 4, 2009
- Mengyu Pan
- H01 - BASIC ELECTRIC ELEMENTS