Zeying Ren

Person

Albany, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Rapid thermal annealing (RTA) methodologies for integration of pero...
- Patent number 12,094,923
- Issue date Sep 17, 2024
- Kepler Computing Inc.
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a perovskite-material based planar capacitor...
- Patent number 11,908,704
- Issue date Feb 20, 2024
- Kepler Computing Inc.
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a perovskite-material based trench capacitor...
- Patent number 11,894,417
- Issue date Feb 6, 2024
- Kepler Computing Inc.
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Rapid thermal annealing (RTA) methodologies for integration of pero...
- Patent number 11,769,790
- Issue date Sep 26, 2023
- Kepler Computing Inc.
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory cell with intrinsic current control
- Patent number 10,608,180
- Issue date Mar 31, 2020
- Crossbar, Inc.
- Sung Hyun Jo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-terminal memory electrode comprising a non-continuous contact s...
- Patent number 10,134,984
- Issue date Nov 20, 2018
- Crossbar, Inc.
- Sung Hyun Jo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory cell with intrinsic current control
- Patent number 9,735,357
- Issue date Aug 15, 2017
- Crossbar, Inc.
- Sung Hyun Jo
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF FABRICATING A PEROVSKITE-MATERIAL BASED PLANAR CAPACITOR...
- Publication number 20230298905
- Publication date Sep 21, 2023
- Kepler Computing Inc.
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A PEROVSKITE-MATERIAL BASED TRENCH CAPACITOR...
- Publication number 20230246064
- Publication date Aug 3, 2023
- Kepler Computing Inc.
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RAPID THERMAL ANNEALING (RTA) METHODOLOGIES FOR INTEGRATION OF PERO...
- Publication number 20230246063
- Publication date Aug 3, 2023
- Kepler Computing Inc.
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RAPID THERMAL ANNEALING (RTA) METHODOLOGIES FOR INTEGRATION OF PERO...
- Publication number 20230246062
- Publication date Aug 3, 2023
- Kepler Computing Inc.
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY CELL WITH INTRINSIC CURRENT CONTROL
- Publication number 20180062075
- Publication date Mar 1, 2018
- Crossbar, Inc.
- Sung Hyun Jo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY CELL WITH INTRINSIC CURRENT CONTROL
- Publication number 20160225824
- Publication date Aug 4, 2016
- Crossbar, Inc.
- Sung Hyun Jo
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Rapid thermal annealing (RTA) methodologies for integration of pero...

Method of fabricating a perovskite-material based planar capacitor...

Method of fabricating a perovskite-material based trench capacitor...

Rapid thermal annealing (RTA) methodologies for integration of pero...

Resistive memory cell with intrinsic current control

Two-terminal memory electrode comprising a non-continuous contact s...

Resistive memory cell with intrinsic current control

Patents Applicationslast 30 patents

METHOD OF FABRICATING A PEROVSKITE-MATERIAL BASED PLANAR CAPACITOR...

METHOD OF FABRICATING A PEROVSKITE-MATERIAL BASED TRENCH CAPACITOR...

RAPID THERMAL ANNEALING (RTA) METHODOLOGIES FOR INTEGRATION OF PERO...

RAPID THERMAL ANNEALING (RTA) METHODOLOGIES FOR INTEGRATION OF PERO...

RESISTIVE MEMORY CELL WITH INTRINSIC CURRENT CONTROL

RESISTIVE MEMORY CELL WITH INTRINSIC CURRENT CONTROL