Zhaoqiang BAI

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Set/reset methods for crystallization improvement in phase change m...
- Patent number 11,081,174
- Issue date Aug 3, 2021
- SanDisk Technologies LLC
- Zhaoqiang Bai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-level phase change memory cells and method of making the same
- Patent number 10,991,879
- Issue date Apr 27, 2021
- Western Digital Technologies, Inc.
- Ricardo Ruiz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold switch for memory
- Patent number 10,943,952
- Issue date Mar 9, 2021
- SanDisk Technologies LLC
- Federico Nardi
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change memory device with crystallization template and method...
- Patent number 10,868,245
- Issue date Dec 15, 2020
- SanDisk Technologies LLC
- Zhaoqiang Bai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Set/reset methods for crystallization improvement in phase change m...
- Patent number 10,839,897
- Issue date Nov 17, 2020
- SanDisk Technologies LLC
- Zhaoqiang Bai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heat-assisted magnetic recording (HAMR) medium with improved corros...
- Patent number 10,650,854
- Issue date May 12, 2020
- Western Digital Technologies, Inc.
- Hua Yuan
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change memory device with reduced read disturb and method of...
- Patent number 10,622,063
- Issue date Apr 14, 2020
- SanDisk Technologies LLC
- Michael Grobis
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
MULTI-LEVEL PHASE CHANGE MEMORY CELLS AND METHOD OF MAKING THE SAME
- Publication number 20200411754
- Publication date Dec 31, 2020
- Western Digital Technologies, Inc.
- Ricardo RUIZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THRESHOLD SWITCH FOR MEMORY
- Publication number 20200388650
- Publication date Dec 10, 2020
- SANDISK TECHNOLOGIES LLC
- Federico Nardi
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE CHANGE MEMORY DEVICE WITH CRYSTALLIZATION TEMPLATE AND METHOD...
- Publication number 20200388752
- Publication date Dec 10, 2020
- SANDISK TECHNOLOGIES LLC
- Zhaoqiang BAI
- G11 - INFORMATION STORAGE
Information Patent Application
SET/RESET METHODS FOR CRYSTALLIZATION IMPROVEMENT IN PHASE CHANGE M...
- Publication number 20200365204
- Publication date Nov 19, 2020
- SANDISK TECHNOLOGIES LLC
- Zhaoqiang Bai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SET/RESET METHODS FOR CRYSTALLIZATION IMPROVEMENT IN PHASE CHANGE M...
- Publication number 20200365203
- Publication date Nov 19, 2020
- SANDISK TECHNOLOGIES LLC
- Zhaoqiang Bai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY DEVICE WITH REDUCED READ DISTURB AND METHOD OF...
- Publication number 20200005863
- Publication date Jan 2, 2020
- SANDISK TECHNOLOGIES LLC
- Michael GROBIS
- G11 - INFORMATION STORAGE

Zhaoqiang BAI

Person

Patents Grantslast 30 patents

Set/reset methods for crystallization improvement in phase change m...

Multi-level phase change memory cells and method of making the same

Threshold switch for memory

Phase change memory device with crystallization template and method...

Set/reset methods for crystallization improvement in phase change m...

Heat-assisted magnetic recording (HAMR) medium with improved corros...

Phase change memory device with reduced read disturb and method of...

Patents Applicationslast 30 patents

MULTI-LEVEL PHASE CHANGE MEMORY CELLS AND METHOD OF MAKING THE SAME

THRESHOLD SWITCH FOR MEMORY

PHASE CHANGE MEMORY DEVICE WITH CRYSTALLIZATION TEMPLATE AND METHOD...

SET/RESET METHODS FOR CRYSTALLIZATION IMPROVEMENT IN PHASE CHANGE M...

SET/RESET METHODS FOR CRYSTALLIZATION IMPROVEMENT IN PHASE CHANGE M...

PHASE CHANGE MEMORY DEVICE WITH REDUCED READ DISTURB AND METHOD OF...