Zhe-Hao Zhang

Person

Hsinchu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Embedded source or drain region of transistor with downward tapered...
- Patent number 12,051,752
- Issue date Jul 30, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Che-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor (FinFET) device and method for forming...
- Patent number 11,721,762
- Issue date Aug 8, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Zhe-Hao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,705,519
- Issue date Jul 18, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Yen Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and formation method of semiconductor device structure wi...
- Patent number 11,631,748
- Issue date Apr 18, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded source or drain region of transistor with downward tapered...
- Patent number 11,594,635
- Issue date Feb 28, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Che-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded source or drain region of transistor with downward tapered...
- Patent number 11,545,572
- Issue date Jan 3, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Che-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor (FinFET) device and method for forming...
- Patent number 11,158,744
- Issue date Oct 26, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Zhe-Hao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,043,593
- Issue date Jun 22, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Cheng-Yen Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor (FinFET) device and method for forming...
- Patent number 10,964,819
- Issue date Mar 30, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Zhe-Hao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor (FinFET) device and method for forming...
- Patent number 10,840,378
- Issue date Nov 17, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Zhe-Hao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and formation method of semiconductor device structure wi...
- Patent number 10,811,516
- Issue date Oct 20, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded source or drain region of transistor with downward tapered...
- Patent number 10,804,396
- Issue date Oct 13, 2020
- Taiwan Semiconductor Manufacturing Company Ltd.
- Che-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor (FinFET) device and method for forming...
- Patent number 10,686,077
- Issue date Jun 16, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Zhe-Hao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor (FinFET) device and method for forming...
- Patent number 10,546,956
- Issue date Jan 28, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Zhe-Hao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 10,483,394
- Issue date Nov 19, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Cheng-Yen Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded source or drain region of transistor with downward tapered...
- Patent number 10,340,382
- Issue date Jul 2, 2019
- Taiwan Semiconductor Manufacturing Company Ltd.
- Che-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor (FinFET) device and method for forming...
- Patent number 10,164,109
- Issue date Dec 25, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Zhe-Hao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and formation method of semiconductor device structure wi...
- Patent number 10,164,050
- Issue date Dec 25, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor (FinFET) device and method for forming...
- Patent number 10,164,108
- Issue date Dec 25, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Zhe-Hao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method of the same
- Patent number 10,084,060
- Issue date Sep 25, 2018
- Taiwan Semiconductor Manufacturing Company Ltd.
- Zhe-Hao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 10,043,906
- Issue date Aug 7, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd
- Cheng-Yen Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded source or drain region of transistor with downward tapered...
- Patent number 9,853,154
- Issue date Dec 26, 2017
- Taiwan Semiconductor Manufacturing Company Ltd.
- Che-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET and method for manufacturing the same
- Patent number 9,799,771
- Issue date Oct 24, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tung-Wen Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor (FinFET) device and method for forming...
- Patent number 9,653,605
- Issue date May 16, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Zhe-Hao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 9,564,528
- Issue date Feb 7, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd
- Cheng-Yen Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Performing treatment on stressors
- Patent number 8,642,435
- Issue date Feb 4, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Che-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Fin Field Effect Transistor (FinFET) Device and Method for Forming...
- Publication number 20230352592
- Publication date Nov 2, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Zhe-Hao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED SOURCE OR DRAIN REGION OF TRANSISTOR WITH DOWNWARD TAPERED...
- Publication number 20230146994
- Publication date May 11, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- CHE-CHENG CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20210313468
- Publication date Oct 7, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Yen YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin Field Effect Transistor (FinFET) Device and Method for Forming...
- Publication number 20210074859
- Publication date Mar 11, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Zhe-Hao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED SOURCE OR DRAIN REGION OF TRANSISTOR WITH DOWNWARD TAPERED...
- Publication number 20210036155
- Publication date Feb 4, 2021
- Taiwan Semiconductor Manufacturing company Ltd.
- CHE-CHENG CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and Formation Method of Semiconductor Device Structure wi...
- Publication number 20210036128
- Publication date Feb 4, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin Field Effect Transistor (FINFET) Device and Method for Forming...
- Publication number 20200220019
- Publication date Jul 9, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Zhe-Hao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin Field Effect Transistor (FinFET) Device and Method for Forming...
- Publication number 20200161474
- Publication date May 21, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Zhe-Hao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20200035832
- Publication date Jan 30, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Yen YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED SOURCE OR DRAIN REGION OF TRANSISTOR WITH DOWNWARD TAPERED...
- Publication number 20190319128
- Publication date Oct 17, 2019
- Taiwan Semiconductor Manufacturing company Ltd.
- CHE-CHENG CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and Formation Method of Semiconductor Device Structure wi...
- Publication number 20190123168
- Publication date Apr 25, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin Field Effect Transistor (FinFET) Device and Method for Forming...
- Publication number 20190123205
- Publication date Apr 25, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Zhe-Hao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin Field Effect Transistor (FinFET) Device and Method for Forming...
- Publication number 20190115473
- Publication date Apr 18, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Zhe-Hao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20180342619
- Publication date Nov 29, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Yen YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED SOURCE OR DRAIN REGION OF TRANSISTOR WITH DOWNWARD TAPERED...
- Publication number 20180145173
- Publication date May 24, 2018
- Taiwan Semiconductor Manufacturing company Ltd.
- CHE-CHENG CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin Field Effect Transistor (FINFET) Device and Method for Forming...
- Publication number 20170250286
- Publication date Aug 31, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Zhe-Hao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20170133506
- Publication date May 11, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Yen YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20160308058
- Publication date Oct 20, 2016
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tung-Wen CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20160211372
- Publication date Jul 21, 2016
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Yen YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE WI...
- Publication number 20160190280
- Publication date Jun 30, 2016
- Taiwan Semiconductor Manufacturing Co., LTD
- Bo-Feng YOUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE AND METHOD FOR FORMING...
- Publication number 20160111540
- Publication date Apr 21, 2016
- Taiwan Semiconductor Manufacturing Co., LTD
- Zhe-Hao ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE AND METHOD FOR FORMING...
- Publication number 20160111542
- Publication date Apr 21, 2016
- Taiwan Semiconductor Manufacturing Co., LTD
- Zhe-Hao ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE AND METHOD FOR FORMING...
- Publication number 20160111420
- Publication date Apr 21, 2016
- Taiwan Semiconductor Manufacturing Co., LTD
- Zhe-Hao ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACUTING METHOD OF THE SAME
- Publication number 20160049483
- Publication date Feb 18, 2016
- Taiwan Semiconductor Manufacturing company Ltd.
- ZHE-HAO ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED SOURCE OR DRAIN REGION OF TRANSISTOR WITH DOWNWARD TAPERED...
- Publication number 20150214366
- Publication date Jul 30, 2015
- Taiwan Semiconductor Manufacturing company Ltd.
- CHE-CHENG CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Performing Treatment on Stressors
- Publication number 20130181262
- Publication date Jul 18, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Che-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS

Zhe-Hao Zhang

Person

Patents Grantslast 30 patents

Embedded source or drain region of transistor with downward tapered...

Fin field effect transistor (FinFET) device and method for forming...

Semiconductor device and manufacturing method thereof

Structure and formation method of semiconductor device structure wi...

Embedded source or drain region of transistor with downward tapered...

Embedded source or drain region of transistor with downward tapered...

Fin field effect transistor (FinFET) device and method for forming...

Semiconductor device and manufacturing method thereof

Fin field effect transistor (FinFET) device and method for forming...

Fin field effect transistor (FinFET) device and method for forming...

Structure and formation method of semiconductor device structure wi...

Embedded source or drain region of transistor with downward tapered...

Fin field effect transistor (FinFET) device and method for forming...

Fin field effect transistor (FinFET) device and method for forming...

Semiconductor device and manufacturing method thereof

Embedded source or drain region of transistor with downward tapered...

Fin field effect transistor (FinFET) device and method for forming...

Structure and formation method of semiconductor device structure wi...

Fin field effect transistor (FinFET) device and method for forming...

Semiconductor structure and manufacturing method of the same

Semiconductor device and manufacturing method thereof

Embedded source or drain region of transistor with downward tapered...

FinFET and method for manufacturing the same

Fin field effect transistor (FinFET) device and method for forming...

Semiconductor device and manufacturing method thereof

Performing treatment on stressors

Patents Applicationslast 30 patents

Fin Field Effect Transistor (FinFET) Device and Method for Forming...

EMBEDDED SOURCE OR DRAIN REGION OF TRANSISTOR WITH DOWNWARD TAPERED...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Fin Field Effect Transistor (FinFET) Device and Method for Forming...

EMBEDDED SOURCE OR DRAIN REGION OF TRANSISTOR WITH DOWNWARD TAPERED...

Structure and Formation Method of Semiconductor Device Structure wi...

Fin Field Effect Transistor (FINFET) Device and Method for Forming...

Fin Field Effect Transistor (FinFET) Device and Method for Forming...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

EMBEDDED SOURCE OR DRAIN REGION OF TRANSISTOR WITH DOWNWARD TAPERED...

Structure and Formation Method of Semiconductor Device Structure wi...

Fin Field Effect Transistor (FinFET) Device and Method for Forming...

Fin Field Effect Transistor (FinFET) Device and Method for Forming...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

EMBEDDED SOURCE OR DRAIN REGION OF TRANSISTOR WITH DOWNWARD TAPERED...

Fin Field Effect Transistor (FINFET) Device and Method for Forming...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

FINFET AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE WI...

FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE AND METHOD FOR FORMING...

FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE AND METHOD FOR FORMING...

FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE AND METHOD FOR FORMING...

SEMICONDUCTOR STRUCTURE AND MANUFACUTING METHOD OF THE SAME

EMBEDDED SOURCE OR DRAIN REGION OF TRANSISTOR WITH DOWNWARD TAPERED...

Performing Treatment on Stressors