Zhen Gu

Person

Cupertino, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Using aluminum as etch stop layer
- Patent number 11,944,020
- Issue date Mar 26, 2024
- Crossbar, Inc.
- Sundar Narayanan
Information Patent Grant
Resistive random access memory and fabrication techniques
- Patent number 11,793,093
- Issue date Oct 17, 2023
- Crossbar, Inc.
- Sung-Hyun Jo
Information Patent Grant
Using aluminum as etch stop layer
- Patent number 10,873,023
- Issue date Dec 22, 2020
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory stack liner comprising dielectric block layer material
- Patent number 10,749,110
- Issue date Aug 18, 2020
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Liner layer for dielectric block layer
- Patent number 10,522,754
- Issue date Dec 31, 2019
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flatness of memory cell surfaces
- Patent number 10,062,845
- Issue date Aug 28, 2018
- Crossbar, Inc.
- Harry Yue Gee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for forming a MEMS device
- Patent number 9,260,290
- Issue date Feb 16, 2016
- Silicon Laboratories Inc.
- Emmanuel P. Quevy
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Gas-diffusion barriers for MEMS encapsulation
- Patent number 9,018,715
- Issue date Apr 28, 2015
- Silicon Laboratories Inc.
- Roger T. Howe
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Technique for forming a MEMS device
- Patent number 8,852,984
- Issue date Oct 7, 2014
- Silicon Laboratories
- Emmanuel P. Quevy
- B81 - MICRO-STRUCTURAL TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
VARYING NITROGEN CONTENT IN SWITCHING LAYER OF TWO-TERMINAL RESISTI...
- Publication number 20220320431
- Publication date Oct 6, 2022
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
USING ALUMINUM AS ETCH STOP LAYER
- Publication number 20210151671
- Publication date May 20, 2021
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY AND FABRICATION TECHNIQUES
- Publication number 20200259081
- Publication date Aug 13, 2020
- Crossbar, Inc.
- Sung-Hyun JO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LINER LAYER FOR DIELECTRIC BLOCK LAYER
- Publication number 20170365780
- Publication date Dec 21, 2017
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
USING ALUMINUM AS ETCH STOP LAYER
- Publication number 20170288139
- Publication date Oct 5, 2017
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUE FOR FORMING A MEMS DEVICE
- Publication number 20150008545
- Publication date Jan 8, 2015
- Silicon Laboratories Inc.
- Emmanuel P. Quevy
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
GAS-DIFFUSION BARRIERS FOR MEMS ENCAPSULATION
- Publication number 20140151820
- Publication date Jun 5, 2014
- Silicon Laboratories Inc.
- Roger T. Howe
- B81 - MICRO-STRUCTURAL TECHNOLOGY

Person

Patents Grantslast 30 patents

Using aluminum as etch stop layer

Resistive random access memory and fabrication techniques

Using aluminum as etch stop layer

Memory stack liner comprising dielectric block layer material

Liner layer for dielectric block layer

Flatness of memory cell surfaces

Technique for forming a MEMS device

Gas-diffusion barriers for MEMS encapsulation

Technique for forming a MEMS device

Patents Applicationslast 30 patents

VARYING NITROGEN CONTENT IN SWITCHING LAYER OF TWO-TERMINAL RESISTI...

USING ALUMINUM AS ETCH STOP LAYER

RESISTIVE RANDOM ACCESS MEMORY AND FABRICATION TECHNIQUES

LINER LAYER FOR DIELECTRIC BLOCK LAYER

USING ALUMINUM AS ETCH STOP LAYER

TECHNIQUE FOR FORMING A MEMS DEVICE

GAS-DIFFUSION BARRIERS FOR MEMS ENCAPSULATION