Zheng Bian

Person

Jiangsu, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and preparation method thereof
- Patent number 11,862,676
- Issue date Jan 2, 2024
- CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO., LTD.
- Dong Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and preparation method therefor
- Patent number 11,799,024
- Issue date Oct 24, 2023
- CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO., LTD.
- Dong Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
VDMOS device and manufacturing method therefor
- Patent number 11,532,726
- Issue date Dec 20, 2022
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Zheng Bian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
VDMOS device and manufacturing method therefor
- Patent number 10,868,145
- Issue date Dec 15, 2020
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Zheng Bian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
VDMOS device and manufacturing method therefor
- Patent number 10,854,743
- Issue date Dec 1, 2020
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Zheng Bian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench gate lead-out structure and manufacturing method therefor
- Patent number 10,475,893
- Issue date Nov 12, 2019
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Zheng Bian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having electro-static discharge protection str...
- Patent number 10,373,945
- Issue date Aug 6, 2019
- CSMC Technologies FAB2 Co., Ltd.
- Zheng Bian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench gate structure and manufacturing method therefor
- Patent number 10,347,730
- Issue date Jul 9, 2019
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Zheng Bian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Test pattern for trench poly over-etched step and formation method...
- Patent number 9,960,047
- Issue date May 1, 2018
- CSMC Technologies Fab1 Co., Ltd.
- Zheng Bian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench DMOS device with reduced gate resistance and manufacturing m...
- Patent number 9,401,422
- Issue date Jul 26, 2016
- CSMC Technologies Fabi Co., Ltd.
- Zheng Bian
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SINGLE-PHOTON AVALANCHE DIODE INTEGRATED WITH QUENCHING RESISTOR AN...
- Publication number 20240322061
- Publication date Sep 26, 2024
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Zheng BIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND PREPARATION METHOD THEREFOR
- Publication number 20230197773
- Publication date Jun 22, 2023
- CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO., LTD.
- DONG FANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND PREPARATION METHOD THEREFOR
- Publication number 20230135315
- Publication date May 4, 2023
- CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO., LTD.
- DONG FANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20220045207
- Publication date Feb 10, 2022
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Dong FANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VDMOS DEVICE AND MANUFACTURING METHOD THEREFOR
- Publication number 20210098606
- Publication date Apr 1, 2021
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Zheng BIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH SPLIT-GATE DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20210028289
- Publication date Jan 28, 2021
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Dong FANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VDMOS DEVICE AND MANUFACTURING METHOD THEREFOR
- Publication number 20190198665
- Publication date Jun 27, 2019
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Zheng BIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VDMOS DEVICE AND MANUFACTURING METHOD THEREFOR
- Publication number 20190198644
- Publication date Jun 27, 2019
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Zheng BIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH GATE LEAD-OUT STRUCTURE AND MANUFACTURING METHOD THEREFOR
- Publication number 20190027564
- Publication date Jan 24, 2019
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Zheng BIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH GATE STRUCTURE AND MANUFACTURING METHOD THEREFOR
- Publication number 20180374925
- Publication date Dec 27, 2018
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Zheng BIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING ELECTRO-STATIC DISCHARGE PROTECTION STR...
- Publication number 20180277532
- Publication date Sep 27, 2018
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Zheng BIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH DMOS DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20150333176
- Publication date Nov 19, 2015
- Zheng Bian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TEST PATTERN FOR TRENCH POLY OVER-ETCHED STEP AND FORMATION METHOD...
- Publication number 20140167045
- Publication date Jun 19, 2014
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Zheng Bian
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Semiconductor device and preparation method thereof

Semiconductor device and preparation method therefor

VDMOS device and manufacturing method therefor

VDMOS device and manufacturing method therefor

VDMOS device and manufacturing method therefor

Trench gate lead-out structure and manufacturing method therefor

Semiconductor device having electro-static discharge protection str...

Trench gate structure and manufacturing method therefor

Test pattern for trench poly over-etched step and formation method...

Trench DMOS device with reduced gate resistance and manufacturing m...

Patents Applicationslast 30 patents

SINGLE-PHOTON AVALANCHE DIODE INTEGRATED WITH QUENCHING RESISTOR AN...

SEMICONDUCTOR DEVICE AND PREPARATION METHOD THEREFOR

SEMICONDUCTOR DEVICE AND PREPARATION METHOD THEREFOR

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

VDMOS DEVICE AND MANUFACTURING METHOD THEREFOR

TRENCH SPLIT-GATE DEVICE AND METHOD FOR MANUFACTURING THE SAME

VDMOS DEVICE AND MANUFACTURING METHOD THEREFOR

VDMOS DEVICE AND MANUFACTURING METHOD THEREFOR

TRENCH GATE LEAD-OUT STRUCTURE AND MANUFACTURING METHOD THEREFOR

TRENCH GATE STRUCTURE AND MANUFACTURING METHOD THEREFOR

SEMICONDUCTOR DEVICE HAVING ELECTRO-STATIC DISCHARGE PROTECTION STR...

TRENCH DMOS DEVICE AND MANUFACTURING METHOD THEREOF

TEST PATTERN FOR TRENCH POLY OVER-ETCHED STEP AND FORMATION METHOD...