Zheng Lu

Person

O'Fallon, MO, US

People

Patents Grantslast 30 patents

Information Patent Grant
Methods for determining suitability of silicon substrates for epitaxy
- Patent number 12,152,314
- Issue date Nov 26, 2024
- GlobalWafers Co., Ltd.
- Shan-Hui Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and systems of capturing transient thermal responses of reg...
- Patent number 12,018,400
- Issue date Jun 25, 2024
- GlobalWafers Co., Ltd.
- Zheng Lu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for preparing ingot having reduced distortion at late body...
- Patent number 11,959,189
- Issue date Apr 16, 2024
- GlobalWafers Co., Ltd.
- Tapas Jain
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitrogen doped and vacancy dominated silicon ingot and thermally tr...
- Patent number 11,753,741
- Issue date Sep 12, 2023
- GlobalWafers Co., Ltd.
- Zheng Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitrogen doped and vacancy dominated silicon ingot and thermally tr...
- Patent number 11,111,602
- Issue date Sep 7, 2021
- GlobalWafers Co., Ltd.
- Zheng Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitrogen doped and vacancy dominated silicon ingot and thermally tr...
- Patent number 10,988,859
- Issue date Apr 27, 2021
- GlobalWafers Co., Ltd.
- Zheng Lu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Controlling melt-solid interface shape of a growing silicon crystal...
- Patent number 7,611,580
- Issue date Nov 3, 2009
- MEMC Electronic Materials, Inc.
- Zheng Lu
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method and device for continuously measuring silicon island elevation
- Patent number 7,573,587
- Issue date Aug 11, 2009
- MEMC Electronic Materials, Inc.
- Zheng Lu
- G01 - MEASURING TESTING
Information Patent Grant
Controlling melt-solid interface shape of a growing silicon crystal...
- Patent number 7,223,304
- Issue date May 29, 2007
- MEMC Electronic Materials, Inc.
- Zheng Lu
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Process for preparing single crystal silicon using crucible rotatio...
- Patent number 7,125,450
- Issue date Oct 24, 2006
- MEMC Electronic Materials, Inc.
- Zheng Lu
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method to monitor and control the crystal cooling or quenching rate...
- Patent number 6,960,254
- Issue date Nov 1, 2005
- MEMC Electronic Materials, Inc.
- Zheng Lu
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Crystal puller and method for growing monocrystalline silicon ingots
- Patent number 6,663,709
- Issue date Dec 16, 2003
- MEMC Electronic Materials, Inc.
- Zheng Lu
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Crystal puller for growing monocrystalline silicon ingots
- Patent number 6,554,898
- Issue date Apr 29, 2003
- MEMC Electronic Materials, Inc.
- Zheng Lu
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC

Patents Applicationslast 30 patents

Information Patent Application
METHODS FOR DETERMINING SUITABILITY OF SILICON SUBSTRATES FOR EPITAXY
- Publication number 20250011968
- Publication date Jan 9, 2025
- GLOBALWAFERS CO., LTD.
- Shan-Hui Lin
- C30 - CRYSTAL GROWTH
Information Patent Application
NITROGEN DOPED AND VACANCY DOMINATED SILICON INGOT AND THERMALLY TR...
- Publication number 20230323564
- Publication date Oct 12, 2023
- GLOBALWAFERS CO., LTD.
- Zheng Lu
- C30 - CRYSTAL GROWTH
Information Patent Application
SYSTEMS AND METHODS FOR DETERMINING MECHANICAL WEAR IN A CRYSTAL PU...
- Publication number 20230304893
- Publication date Sep 28, 2023
- GLOBALWAFERS CO., LTD.
- Zheng Lu
- C30 - CRYSTAL GROWTH
Information Patent Application
INGOT PULLER APPARATUS HAVING SILICON FEED TUBES WITH KICK PLATES
- Publication number 20230272552
- Publication date Aug 31, 2023
- GLOBALWAFERS CO., LTD.
- Chun-Sheng Wu
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS FOR DETERMINING SUITABILITY OF SILICON SUBSTRATES FOR EPITAXY
- Publication number 20220403548
- Publication date Dec 22, 2022
- GLOBALWAFERS CO., LTD.
- Shan-Hui Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR DETERMINING SUITABILITY OF CZOCHRALSKI GROWTH CONDITION...
- Publication number 20220403549
- Publication date Dec 22, 2022
- GLOBALWAFERS CO., LTD.
- Zheng Lu
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS AND SYSTEMS OF CAPTURING TRANSIENT THERMAL RESPONSES OF REG...
- Publication number 20220259763
- Publication date Aug 18, 2022
- GLOBALWAFERS CO., LTD.
- Zheng Lu
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR PREPARING INGOT HAVING REDUCED DISTORTION AT LATE BODY...
- Publication number 20220220631
- Publication date Jul 14, 2022
- GLOBALWAFERS CO., LTD.
- Tapas Jain
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR PREPARING INGOT HAVING REDUCED DISTORTION AT LATE BODY...
- Publication number 20210269936
- Publication date Sep 2, 2021
- GLOBALWAFERS CO., LTD.
- Tapas Jain
- C30 - CRYSTAL GROWTH
Information Patent Application
NITROGEN DOPED AND VACANCY DOMINATED SILICON INGOT AND THERMALLY TR...
- Publication number 20210198805
- Publication date Jul 1, 2021
- GLOBALWAFERS CO., LTD.
- Zheng Lu
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR PREPARING INGOT HAVING REDUCED DISTORTION AT LATE BODY...
- Publication number 20200325594
- Publication date Oct 15, 2020
- GLOBALWAFERS CO., LTD.
- Tapas Jain
- C30 - CRYSTAL GROWTH
Information Patent Application
SYSTEMS FOR PRODUCING A MONOCRYSTALLINE INGOT THAT INVOLVE MONITORI...
- Publication number 20200002840
- Publication date Jan 2, 2020
- Global Wafers Co., Ltd
- Zheng Lu
- C01 - INORGANIC CHEMISTRY
Information Patent Application
METHODS FOR PRODUCING A SILICON INGOT THAT INVOLVE MONITORING A MOV...
- Publication number 20200002838
- Publication date Jan 2, 2020
- Global Wafers Co., Ltd
- Zheng Lu
- C30 - CRYSTAL GROWTH
Information Patent Application
MONITORING A MOVING AVERAGE OF THE INGOT NECK PULL RATE TO CONTROL...
- Publication number 20200002839
- Publication date Jan 2, 2020
- Global Wafers Co., Ltd
- Zheng Lu
- C30 - CRYSTAL GROWTH
Information Patent Application
Nitrogen Doped and Vacancy Dominated Silicon Ingot and Thermally Tr...
- Publication number 20180266015
- Publication date Sep 20, 2018
- SunEdison Semiconductor Limited (UEN201334164H)
- Zheng Lu
- C30 - CRYSTAL GROWTH
Information Patent Application
Nitrogen Doped and Vacancy Dominated Silicon Ingot and Thermally Tr...
- Publication number 20180266016
- Publication date Sep 20, 2018
- SunEdison Semiconductor Limited (UEN20133416H)
- Zheng Lu
- C30 - CRYSTAL GROWTH
Information Patent Application
NITROGEN DOPED AND VACANCY DOMINATED SILICON INGOT AND THERMALLY TR...
- Publication number 20160032491
- Publication date Feb 4, 2016
- SunEdison Semiconductor Limited (UEN201334164H)
- Zheng Lu
- C30 - CRYSTAL GROWTH
Information Patent Application
CONTROLLING MELT-SOLID INTERFACE SHAPE OF A GROWING SILICON CRYSTAL...
- Publication number 20070227442
- Publication date Oct 4, 2007
- MEMC Electronic Materials, Inc.
- Zheng Lu
- C30 - CRYSTAL GROWTH
Information Patent Application
Controlling melt-solid interface shape of a growing silicon crystal...
- Publication number 20060144321
- Publication date Jul 6, 2006
- MEMC Electronic Materials, Inc.
- Zheng Lu
- C30 - CRYSTAL GROWTH
Information Patent Application
Method to monitor and control the crystal cooling or quenching rate...
- Publication number 20050016443
- Publication date Jan 27, 2005
- MEMC Electronic Materials, Inc.
- Zheng Lu
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for preparing single crystal silicon using crucible rotatio...
- Publication number 20040118333
- Publication date Jun 24, 2004
- MEMC Electronic Materials, Inc.
- Zheng Lu
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for suppressing the nucleation and/or growth of interstitia...
- Publication number 20030196587
- Publication date Oct 23, 2003
- MEMC Electronic Materials, Inc.
- Kirk D. McCallum
- C30 - CRYSTAL GROWTH
Information Patent Application
Crystal puller for growing monocrystalline silicon ingots
- Publication number 20030024473
- Publication date Feb 6, 2003
- MEMC Electronic Materials, Inc.
- Zheng Lu
- C30 - CRYSTAL GROWTH
Information Patent Application
Crystal puller and method for growing monocrystalline silicon ingots
- Publication number 20020195045
- Publication date Dec 26, 2002
- Zheng Lu
- C30 - CRYSTAL GROWTH

Person

Patents Grantslast 30 patents

Methods for determining suitability of silicon substrates for epitaxy

Methods and systems of capturing transient thermal responses of reg...

Process for preparing ingot having reduced distortion at late body...

Nitrogen doped and vacancy dominated silicon ingot and thermally tr...

Nitrogen doped and vacancy dominated silicon ingot and thermally tr...

Nitrogen doped and vacancy dominated silicon ingot and thermally tr...

Controlling melt-solid interface shape of a growing silicon crystal...

Method and device for continuously measuring silicon island elevation

Controlling melt-solid interface shape of a growing silicon crystal...

Process for preparing single crystal silicon using crucible rotatio...

Method to monitor and control the crystal cooling or quenching rate...

Crystal puller and method for growing monocrystalline silicon ingots

Crystal puller for growing monocrystalline silicon ingots

Patents Applicationslast 30 patents

METHODS FOR DETERMINING SUITABILITY OF SILICON SUBSTRATES FOR EPITAXY

NITROGEN DOPED AND VACANCY DOMINATED SILICON INGOT AND THERMALLY TR...

SYSTEMS AND METHODS FOR DETERMINING MECHANICAL WEAR IN A CRYSTAL PU...

INGOT PULLER APPARATUS HAVING SILICON FEED TUBES WITH KICK PLATES

METHODS FOR DETERMINING SUITABILITY OF SILICON SUBSTRATES FOR EPITAXY

METHODS FOR DETERMINING SUITABILITY OF CZOCHRALSKI GROWTH CONDITION...

METHODS AND SYSTEMS OF CAPTURING TRANSIENT THERMAL RESPONSES OF REG...

PROCESS FOR PREPARING INGOT HAVING REDUCED DISTORTION AT LATE BODY...

PROCESS FOR PREPARING INGOT HAVING REDUCED DISTORTION AT LATE BODY...

NITROGEN DOPED AND VACANCY DOMINATED SILICON INGOT AND THERMALLY TR...

PROCESS FOR PREPARING INGOT HAVING REDUCED DISTORTION AT LATE BODY...

SYSTEMS FOR PRODUCING A MONOCRYSTALLINE INGOT THAT INVOLVE MONITORI...

METHODS FOR PRODUCING A SILICON INGOT THAT INVOLVE MONITORING A MOV...

MONITORING A MOVING AVERAGE OF THE INGOT NECK PULL RATE TO CONTROL...

Nitrogen Doped and Vacancy Dominated Silicon Ingot and Thermally Tr...

Nitrogen Doped and Vacancy Dominated Silicon Ingot and Thermally Tr...

NITROGEN DOPED AND VACANCY DOMINATED SILICON INGOT AND THERMALLY TR...

CONTROLLING MELT-SOLID INTERFACE SHAPE OF A GROWING SILICON CRYSTAL...

Controlling melt-solid interface shape of a growing silicon crystal...

Method to monitor and control the crystal cooling or quenching rate...

Process for preparing single crystal silicon using crucible rotatio...

Process for suppressing the nucleation and/or growth of interstitia...

Crystal puller for growing monocrystalline silicon ingots

Crystal puller and method for growing monocrystalline silicon ingots