Zheng-Yang Pan

Person

Zhubei, TW

People

Patents Grantslast 30 patents

Information Patent Grant
NMOS and PMOS transistor gates with hafnium oxide layers and lantha...
- Patent number 12,107,015
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fully strained channel
- Patent number 12,080,761
- Issue date Sep 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and methods of manufacturing the same
- Patent number 12,057,351
- Issue date Aug 6, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi Chen Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 11,901,442
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ya-Wen Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with multi-layered source/drain regions having...
- Patent number 11,776,851
- Issue date Oct 3, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Yu Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dopant concentration boost in epitaxially formed material
- Patent number 11,721,760
- Issue date Aug 8, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Yu Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 11,677,015
- Issue date Jun 13, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ya-Wen Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 11,646,231
- Issue date May 9, 2023
- Taiwan Semiconductor Manufacturing Company
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with multi-layered source/drain regions having...
- Patent number 11,342,228
- Issue date May 24, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Yu Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fully strained channel
- Patent number 11,233,123
- Issue date Jan 25, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for high-K metal gate
- Patent number 11,171,220
- Issue date Nov 9, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor (FinFET) device structure
- Patent number 11,152,362
- Issue date Oct 19, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Chieh Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NMOS and PMOS transistor gates with hafnium oxide layers and lantha...
- Patent number 11,011,433
- Issue date May 18, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to form a fully strained channel region
- Patent number 10,879,124
- Issue date Dec 29, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Chieh Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 10,879,126
- Issue date Dec 29, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with source/drain structures
- Patent number 10,879,396
- Issue date Dec 29, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor (FinFET) device structure
- Patent number 10,879,240
- Issue date Dec 29, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Chieh Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device and methods of forming same
- Patent number 10,867,799
- Issue date Dec 15, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun Chieh Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with multi-layered source/drain regions having...
- Patent number 10,734,524
- Issue date Aug 4, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Yu Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for high-k metal gate
- Patent number 10,672,886
- Issue date Jun 2, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation method of semiconductor device with source/drain structures
- Patent number 10,636,909
- Issue date Apr 28, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming transistor gates with hafnium oxide layers and...
- Patent number 10,629,496
- Issue date Apr 21, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fully strained channel
- Patent number 10,535,736
- Issue date Jan 14, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device and methods of forming same
- Patent number 10,522,358
- Issue date Dec 31, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Chieh Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dopant concentration boost in epitaxially formed material
- Patent number 10,490,661
- Issue date Nov 26, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Yu Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with multi-layered source/drain regions having...
- Patent number 10,347,764
- Issue date Jul 9, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Yu Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 10,269,646
- Issue date Apr 23, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation method and structure semiconductor device with source/dra...
- Patent number 10,164,100
- Issue date Dec 25, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation method of semiconductor device structure with semiconduct...
- Patent number 10,043,665
- Issue date Aug 7, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure of semiconductor device with source/drain structures
- Patent number 10,026,840
- Issue date Jul 17, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING THE SAME
- Publication number 20240395631
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi Chen HO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR ISOLATION REGIONS
- Publication number 20240379450
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi Chen Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FULLY STRAINED CHANNEL
- Publication number 20240371941
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NMOS and PMOS Transistor Gates with Hafnium Oxide Layers and Lantha...
- Publication number 20240363442
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20240145581
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ya-Wen CHIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dopant Concentration Boost in Epitaxially Formed Material
- Publication number 20240014321
- Publication date Jan 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Yu Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20230253254
- Publication date Aug 10, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING THE SAME
- Publication number 20230154803
- Publication date May 18, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Yi Chen HO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor Isolation Regions and Methods of Forming the Same
- Publication number 20230008893
- Publication date Jan 12, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi Chen Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20220376091
- Publication date Nov 24, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ya-Wen CHIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Multi-Layered Source/Drain Regions Having...
- Publication number 20220262681
- Publication date Aug 18, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Yu Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fully Strained Channel
- Publication number 20220149157
- Publication date May 12, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20210359111
- Publication date Nov 18, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ya-Wen CHIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NMOS and PMOS Transistor Gates with Hafnium Oxide Layers and Lantha...
- Publication number 20210257263
- Publication date Aug 19, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20210118740
- Publication date Apr 22, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH MULTI-LAYERED SOURCE/DRAIN REGIONS HAVING...
- Publication number 20200365720
- Publication date Nov 19, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Yu Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and Method for High-K Metal Gate
- Publication number 20200295157
- Publication date Sep 17, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Forming Transistor Gates with Hafnium Oxide Layers and...
- Publication number 20200251390
- Publication date Aug 6, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH SOURCE/DRAIN STRUCTURES
- Publication number 20200243683
- Publication date Jul 30, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fully Strained Channel
- Publication number 20200152742
- Publication date May 14, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFET Device and Methods of Forming Same
- Publication number 20200105534
- Publication date Apr 2, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Chieh Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dopant Concentration Boost in Epitaxially Formed Material
- Publication number 20200091343
- Publication date Mar 19, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Yu Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH MULTI-LAYERED SOURCE/DRAIN REGIONS HAVING...
- Publication number 20190334029
- Publication date Oct 31, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Yu Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20190244864
- Publication date Aug 8, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO FORM A FULLY STRAINED CHANNEL REGION
- Publication number 20190157154
- Publication date May 23, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Chieh Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH SOURCE/DRAIN STRUCTURES
- Publication number 20190148552
- Publication date May 16, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FULLY STRAINED CHANNEL
- Publication number 20190096997
- Publication date Mar 28, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFET Device and Methods of Forming Same
- Publication number 20190067011
- Publication date Feb 28, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Chieh Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR HIGH-K METAL GATE
- Publication number 20190067457
- Publication date Feb 28, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Implantations for Forming Source/Drain Regions of Different Transis...
- Publication number 20190035694
- Publication date Jan 31, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS

Zheng-Yang Pan

Person

Patents Grantslast 30 patents

NMOS and PMOS transistor gates with hafnium oxide layers and lantha...

Fully strained channel

Semiconductor device and methods of manufacturing the same

Method of manufacturing a semiconductor device and a semiconductor...

Semiconductor device with multi-layered source/drain regions having...

Dopant concentration boost in epitaxially formed material

Method of manufacturing a semiconductor device and a semiconductor...

Semiconductor device and method

Semiconductor device with multi-layered source/drain regions having...

Fully strained channel

Structure and method for high-K metal gate

Fin field effect transistor (FinFET) device structure

NMOS and PMOS transistor gates with hafnium oxide layers and lantha...

Method to form a fully strained channel region

Semiconductor device and method

Semiconductor device with source/drain structures

Fin field effect transistor (FinFET) device structure

FinFET device and methods of forming same

Semiconductor device with multi-layered source/drain regions having...

Structure and method for high-k metal gate

Formation method of semiconductor device with source/drain structures

Methods for forming transistor gates with hafnium oxide layers and...

Fully strained channel

FinFET device and methods of forming same

Dopant concentration boost in epitaxially formed material

Semiconductor device with multi-layered source/drain regions having...

Semiconductor device and method

Formation method and structure semiconductor device with source/dra...

Formation method of semiconductor device structure with semiconduct...

Structure of semiconductor device with source/drain structures

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING THE SAME

TRANSISTOR ISOLATION REGIONS

FULLY STRAINED CHANNEL

NMOS and PMOS Transistor Gates with Hafnium Oxide Layers and Lantha...

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

Dopant Concentration Boost in Epitaxially Formed Material

Semiconductor Device and Method

SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING THE SAME

Transistor Isolation Regions and Methods of Forming the Same

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

Semiconductor Device with Multi-Layered Source/Drain Regions Having...

Fully Strained Channel

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

NMOS and PMOS Transistor Gates with Hafnium Oxide Layers and Lantha...

Semiconductor Device and Method

SEMICONDUCTOR DEVICE WITH MULTI-LAYERED SOURCE/DRAIN REGIONS HAVING...

Structure and Method for High-K Metal Gate

Methods for Forming Transistor Gates with Hafnium Oxide Layers and...

SEMICONDUCTOR DEVICE WITH SOURCE/DRAIN STRUCTURES

Fully Strained Channel

FinFET Device and Methods of Forming Same

Dopant Concentration Boost in Epitaxially Formed Material

SEMICONDUCTOR DEVICE WITH MULTI-LAYERED SOURCE/DRAIN REGIONS HAVING...

Semiconductor Device and Method

METHOD TO FORM A FULLY STRAINED CHANNEL REGION

FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH SOURCE/DRAIN STRUCTURES

FULLY STRAINED CHANNEL

FinFET Device and Methods of Forming Same

STRUCTURE AND METHOD FOR HIGH-K METAL GATE

Implantations for Forming Source/Drain Regions of Different Transis...