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Patents Grantslast 30 patents

  • Information Patent Grant

    Fin field-effect transistor
    • Patent number 10,431,671
    • Issue date Oct 1, 2019
    • Semiconductor Manufacturing International (Shanghai) Corporation
    • Xiaopeng Yu
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Grant

    Fin field-effect transistor and fabrication method thereof
    • Patent number 9,871,120
    • Issue date Jan 16, 2018
    • Semiconductor Manufacturing International (Shanghai) Corporation
    • Xiaopeng Yu
    • H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

  • Information Patent Application

    FIN FIELD-EFFCT TRANSISTOR
    • Publication number 20180097090
    • Publication date Apr 5, 2018
    • Semiconductor Manufacturing Internationa (Shanghai) Corporation
    • XIAOPENG YU
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    FIN FIELD-EFFCT TRANSISTOR AND FABRICATION METHOD THEREOF
    • Publication number 20150380241
    • Publication date Dec 31, 2015
    • Semiconductor Manufacturing International (Shanghai) Corporation
    • XIAOPENG YU
    • H01 - BASIC ELECTRIC ELEMENTS