Zhengmao Zhu

Person

Poughkeepsie, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Source and drain doping profile control employing carbon-doped semi...
- Patent number 9,385,237
- Issue date Jul 5, 2016
- International Business Machines Corporation
- Pranita Kerber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source and drain doping profile control employing carbon-doped semi...
- Patent number 9,231,108
- Issue date Jan 5, 2016
- International Business Machines Corporation
- Pranita Kerber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source and drain doping profile control employing carbon-doped semi...
- Patent number 9,059,292
- Issue date Jun 16, 2015
- International Business Machines Corporation
- Viorel Ontalus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to enable compressively strained pFET channel in a FinFET st...
- Patent number 8,900,973
- Issue date Dec 2, 2014
- International Business Machines Corporation
- Nathaniel C. Berliner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress memorization process improvement for improved technology per...
- Patent number 8,535,999
- Issue date Sep 17, 2013
- International Business Machines Corporation
- Lahir Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolayer dopant embedded stressor for advanced CMOS
- Patent number 8,421,191
- Issue date Apr 16, 2013
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having test and transistor structures
- Patent number 8,378,424
- Issue date Feb 19, 2013
- International Business Machines Corporation
- Abhishek Dube
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced pattern loading for doped epitaxial process and semiconduct...
- Patent number 8,338,279
- Issue date Dec 25, 2012
- International Business Machines Corporation
- Abhishek Dube
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Delta monolayer dopants epitaxy for embedded source/drain silicide
- Patent number 8,299,535
- Issue date Oct 30, 2012
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolayer dopant embedded stressor for advanced CMOS
- Patent number 8,236,660
- Issue date Aug 7, 2012
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bi-layer nFET embedded stressor element and integration to enhance...
- Patent number 8,035,141
- Issue date Oct 11, 2011
- International Business Machines Corporation
- Kevin K. Chan
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC

Patents Applicationslast 30 patents

Information Patent Application
LOW TEMPERATURE SELECTIVE DEPOSITION EMPLOYING A GERMANIUM-CONTAINI...
- Publication number 20170194138
- Publication date Jul 6, 2017
- International Business Machines Corporation
- Paul D. Brabant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE AND DRAIN DOPING PROFILE CONTROL EMPLOYING CARBON-DOPED SEMI...
- Publication number 20150221724
- Publication date Aug 6, 2015
- International Business Machines Corporation
- Pranita Kerber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE AND DRAIN DOPING PROFILE CONTROL EMPLOYING CARBON-DOPED SEMI...
- Publication number 20150044846
- Publication date Feb 12, 2015
- International Business Machines Corporation
- Pranita Kerber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Source and Drain Doping Profile Control Employing Carbon-Doped Semi...
- Publication number 20140035000
- Publication date Feb 6, 2014
- International Business Machines Corporation
- Viorel Ontalus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO ENABLE COMPRESSIVELY STRAINED PFET CHANNEL IN A FINFET ST...
- Publication number 20130052801
- Publication date Feb 28, 2013
- International Business Machines Corporation
- Nathaniel C. Berliner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING TEST AND TRANSISTOR STRUCTURES
- Publication number 20120319110
- Publication date Dec 20, 2012
- Abhishek Dube
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLAYER DOPANT EMBEDDED STRESSOR FOR ADVANCED CMOS
- Publication number 20120261717
- Publication date Oct 18, 2012
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED PATTERN LOADING FOR DOPED EPITAXIAL PROCESS AND SEMICONDUCT...
- Publication number 20120248436
- Publication date Oct 4, 2012
- International Business Machines Corporation
- Abhishek Dube
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS MEMORIZATION PROCESS IMPROVEMENT FOR IMPROVED TECHNOLOGY PER...
- Publication number 20120086071
- Publication date Apr 12, 2012
- International Business Machines Corporation
- Lahir Shaik Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DELTA MONOLAYER DOPANTS EPITAXY FOR EMBEDDED SOURCE/DRAIN SILICIDE
- Publication number 20110316044
- Publication date Dec 29, 2011
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLAYER DOPANT EMBEDDED STRESSOR FOR ADVANCED CMOS
- Publication number 20110260213
- Publication date Oct 27, 2011
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BI-LAYER nFET EMBEDDED STRESSOR ELEMENT AND INTEGRATION TO ENHANCE...
- Publication number 20110095343
- Publication date Apr 28, 2011
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS

Zhengmao Zhu

Person

Patents Grantslast 30 patents

Source and drain doping profile control employing carbon-doped semi...

Source and drain doping profile control employing carbon-doped semi...

Source and drain doping profile control employing carbon-doped semi...

Method to enable compressively strained pFET channel in a FinFET st...

Stress memorization process improvement for improved technology per...

Monolayer dopant embedded stressor for advanced CMOS

Semiconductor structure having test and transistor structures

Reduced pattern loading for doped epitaxial process and semiconduct...

Delta monolayer dopants epitaxy for embedded source/drain silicide

Monolayer dopant embedded stressor for advanced CMOS

Bi-layer nFET embedded stressor element and integration to enhance...

Patents Applicationslast 30 patents

LOW TEMPERATURE SELECTIVE DEPOSITION EMPLOYING A GERMANIUM-CONTAINI...

SOURCE AND DRAIN DOPING PROFILE CONTROL EMPLOYING CARBON-DOPED SEMI...

SOURCE AND DRAIN DOPING PROFILE CONTROL EMPLOYING CARBON-DOPED SEMI...

Source and Drain Doping Profile Control Employing Carbon-Doped Semi...

METHOD TO ENABLE COMPRESSIVELY STRAINED PFET CHANNEL IN A FINFET ST...

SEMICONDUCTOR STRUCTURE HAVING TEST AND TRANSISTOR STRUCTURES

MONOLAYER DOPANT EMBEDDED STRESSOR FOR ADVANCED CMOS

REDUCED PATTERN LOADING FOR DOPED EPITAXIAL PROCESS AND SEMICONDUCT...

STRESS MEMORIZATION PROCESS IMPROVEMENT FOR IMPROVED TECHNOLOGY PER...

DELTA MONOLAYER DOPANTS EPITAXY FOR EMBEDDED SOURCE/DRAIN SILICIDE

MONOLAYER DOPANT EMBEDDED STRESSOR FOR ADVANCED CMOS

BI-LAYER nFET EMBEDDED STRESSOR ELEMENT AND INTEGRATION TO ENHANCE...