Zhengyi Zhang

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
In-line programming adjustment of a memory cell in a memory sub-system
- Patent number 12,254,927
- Issue date Mar 18, 2025
- Micron Technology, Inc.
- Sheyang Ning
- G11 - INFORMATION STORAGE
Information Patent Grant
In-line programming adjustment of a memory cell in a memory sub-system
- Patent number 12,014,778
- Issue date Jun 18, 2024
- Micron Technology, Inc.
- Sheyang Ning
- G11 - INFORMATION STORAGE
Information Patent Grant
Detrapping electrons to prevent quick charge loss during program ve...
- Patent number 11,967,387
- Issue date Apr 23, 2024
- Micron Technology, Inc.
- Ching-Huang Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatus for rapid data destruction
- Patent number 11,538,535
- Issue date Dec 27, 2022
- Micron Technology, Inc.
- Zhengyi Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Detrapping electrons to prevent quick charge loss during program ve...
- Patent number 11,508,449
- Issue date Nov 22, 2022
- Micron Technology, Inc.
- Ching-Huang Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatus and methods for rapid data destruction
- Patent number 11,087,851
- Issue date Aug 10, 2021
- Micron Technology, Inc.
- Zhengyi Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-state programming in memory device with loop-dependent bit li...
- Patent number 10,854,300
- Issue date Dec 1, 2020
- SanDisk Technologies LLC
- Ching-Huang Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Suppressing program disturb during program recovery in memory device
- Patent number 10,762,973
- Issue date Sep 1, 2020
- SanDisk Technologies LLC
- Ching-Huang Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Reducing neighbor word line interference in a two-tier memory devic...
- Patent number 10,748,627
- Issue date Aug 18, 2020
- SanDisk Technologies LLC
- Hong-Yan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-state programming in memory device with loop-dependent bit li...
- Patent number 10,706,941
- Issue date Jul 7, 2020
- SanDisk Technologies LLC
- Ching-Huang Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Adjusting voltage on adjacent word line during verify of memory cel...
- Patent number 10,446,244
- Issue date Oct 15, 2019
- SanDisk Technologies LLC
- Vinh Diep
- G11 - INFORMATION STORAGE
Information Patent Grant
Grouping memory cells into sub-blocks for program speed uniformity
- Patent number 10,431,313
- Issue date Oct 1, 2019
- SanDisk Technologies LLC
- Zhengyi Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Reducing widening of threshold voltage distributions in a memory de...
- Patent number 10,424,387
- Issue date Sep 24, 2019
- SanDisk Technologies LLC
- Zhengyi Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Separate drain-side dummy word lines within a block to reduce progr...
- Patent number 10,297,330
- Issue date May 21, 2019
- SanDisk Technologies LLC
- Zhengyi Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory with reduced program speed variation
- Patent number 10,134,479
- Issue date Nov 20, 2018
- SanDisk Technologies LLC
- Zhengyi Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Sense circuit having bit line clamp transistors with different thre...
- Patent number 10,038,005
- Issue date Jul 31, 2018
- SanDisk Technologies LLC
- Zhengyi Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Suppressing disturb of select gate transistors during erase in memory
- Patent number 9,984,760
- Issue date May 29, 2018
- SanDisk Technologies LLC
- Zhengyi Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Grouping memory cells into sub-blocks for program speed uniformity
- Patent number 9,959,932
- Issue date May 1, 2018
- SanDisk Technologies LLC
- Zhengyi Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Reducing select gate injection disturb at the beginning of an erase...
- Patent number 9,922,705
- Issue date Mar 20, 2018
- SanDisk Technologies LLC
- Vinh Diep
- G11 - INFORMATION STORAGE
Information Patent Grant
Dummy word line bias ramp rate during programming
- Patent number 9,887,002
- Issue date Feb 6, 2018
- SanDisk Technologies LLC
- Zhengyi Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Data recovery method after word line-to-word line short circuit
- Patent number 9,785,493
- Issue date Oct 10, 2017
- SanDisk Technologies LLC
- Zhengyi Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Equalizing erase depth in different blocks of memory cells
- Patent number 9,786,378
- Issue date Oct 10, 2017
- SanDisk Technologies LLC
- Zhengyi Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Method to recover cycling damage and improve long term data retention
- Patent number 9,378,832
- Issue date Jun 28, 2016
- SanDisk Technologies Inc.
- Ching-Huang Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Adaptive increase in control gate voltage of a dummy memory cell to...
- Patent number 9,299,450
- Issue date Mar 29, 2016
- SanDisk Technologies Inc.
- Liang Pang
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
IN-LINE PROGRAMMING ADJUSTMENT OF A MEMORY CELL IN A MEMORY SUB-SYSTEM
- Publication number 20240290389
- Publication date Aug 29, 2024
- Micron Technology, Inc.
- Sheyang Ning
- G11 - INFORMATION STORAGE
Information Patent Application
DETRAPPING ELECTRONS TO PREVENT QUICK CHARGE LOSS DURING PROGRAM VE...
- Publication number 20230044240
- Publication date Feb 9, 2023
- Micron Technology, Inc.
- Ching-Huang Lu
- G11 - INFORMATION STORAGE
Information Patent Application
IN-LINE PROGRAMMING ADJUSTMENT OF A MEMORY CELL IN A MEMORY SUB-SYSTEM
- Publication number 20220310166
- Publication date Sep 29, 2022
- Micron Technology, Inc.
- Sheyang Ning
- G11 - INFORMATION STORAGE
Information Patent Application
DETRAPPING ELECTRONS TO PREVENT QUICK CHARGE LOSS DURING PROGRAM VE...
- Publication number 20220199175
- Publication date Jun 23, 2022
- Micron Technology, Inc.
- Ching-Huang Lu
- G11 - INFORMATION STORAGE
Information Patent Application
APPARATUS FOR RAPID DATA DESTRUCTION
- Publication number 20210366558
- Publication date Nov 25, 2021
- Micron Technology, Inc.
- Zhengyi Zhang
- G11 - INFORMATION STORAGE
Information Patent Application
APPARATUS AND METHODS FOR RAPID DATA DESTRUCTION
- Publication number 20210202013
- Publication date Jul 1, 2021
- Micron Technology, Inc.
- Zhengyi Zhang
- G11 - INFORMATION STORAGE
Information Patent Application
MULTI-STATE PROGRAMMING IN MEMORY DEVICE WITH LOOP-DEPENDENT BIT LI...
- Publication number 20200312410
- Publication date Oct 1, 2020
- SANDISK TECHNOLOGIES LLC
- Ching-Huang Lu
- G11 - INFORMATION STORAGE
Information Patent Application
REDUCING NEIGHBOR WORD LINE INTERFERENCE IN A TWO-TIER MEMORY DEVIC...
- Publication number 20200202962
- Publication date Jun 25, 2020
- SANDISK TECHNOLOGIES LLC
- Hong-Yan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ADJUSTING VOLTAGE ON ADJACENT WORD LINE DURING VERIFY OF MEMORY CEL...
- Publication number 20190311772
- Publication date Oct 10, 2019
- SanDisk Technologies LLC
- Vinh Diep
- G11 - INFORMATION STORAGE
Information Patent Application
Separate Drain-Side Dummy Word Lines Within A Block To Reduce Progr...
- Publication number 20180358102
- Publication date Dec 13, 2018
- SanDisk Technologies LLC
- Zhengyi Zhang
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH REDUCED PROGRAM SPEED VARIATION
- Publication number 20180308555
- Publication date Oct 25, 2018
- SanDisk Technologies LLC
- Zhengyi Zhang
- G11 - INFORMATION STORAGE
Information Patent Application
GROUPING MEMORY CELLS INTO SUB-BLOCKS FOR PROGRAM SPEED UNIFORMITY
- Publication number 20180240527
- Publication date Aug 23, 2018
- SanDisk Technologies LLC
- Zhengyi Zhang
- G11 - INFORMATION STORAGE
Information Patent Application
Method To Recover Cycling Damage And Improve Long Term Data Retention
- Publication number 20160172044
- Publication date Jun 16, 2016
- SANDISK TECHNOLOGIES INC.
- Ching-Huang Lu
- G11 - INFORMATION STORAGE

Zhengyi Zhang

Person

Patents Grantslast 30 patents

In-line programming adjustment of a memory cell in a memory sub-system

In-line programming adjustment of a memory cell in a memory sub-system

Detrapping electrons to prevent quick charge loss during program ve...

Apparatus for rapid data destruction

Detrapping electrons to prevent quick charge loss during program ve...

Apparatus and methods for rapid data destruction

Multi-state programming in memory device with loop-dependent bit li...

Suppressing program disturb during program recovery in memory device

Reducing neighbor word line interference in a two-tier memory devic...

Multi-state programming in memory device with loop-dependent bit li...

Adjusting voltage on adjacent word line during verify of memory cel...

Grouping memory cells into sub-blocks for program speed uniformity

Reducing widening of threshold voltage distributions in a memory de...

Separate drain-side dummy word lines within a block to reduce progr...

Non-volatile memory with reduced program speed variation

Sense circuit having bit line clamp transistors with different thre...

Suppressing disturb of select gate transistors during erase in memory

Grouping memory cells into sub-blocks for program speed uniformity

Reducing select gate injection disturb at the beginning of an erase...

Dummy word line bias ramp rate during programming

Data recovery method after word line-to-word line short circuit

Equalizing erase depth in different blocks of memory cells

Method to recover cycling damage and improve long term data retention

Adaptive increase in control gate voltage of a dummy memory cell to...

Patents Applicationslast 30 patents

IN-LINE PROGRAMMING ADJUSTMENT OF A MEMORY CELL IN A MEMORY SUB-SYSTEM

DETRAPPING ELECTRONS TO PREVENT QUICK CHARGE LOSS DURING PROGRAM VE...

IN-LINE PROGRAMMING ADJUSTMENT OF A MEMORY CELL IN A MEMORY SUB-SYSTEM

DETRAPPING ELECTRONS TO PREVENT QUICK CHARGE LOSS DURING PROGRAM VE...

APPARATUS FOR RAPID DATA DESTRUCTION

APPARATUS AND METHODS FOR RAPID DATA DESTRUCTION

MULTI-STATE PROGRAMMING IN MEMORY DEVICE WITH LOOP-DEPENDENT BIT LI...

REDUCING NEIGHBOR WORD LINE INTERFERENCE IN A TWO-TIER MEMORY DEVIC...

ADJUSTING VOLTAGE ON ADJACENT WORD LINE DURING VERIFY OF MEMORY CEL...

Separate Drain-Side Dummy Word Lines Within A Block To Reduce Progr...

NON-VOLATILE MEMORY WITH REDUCED PROGRAM SPEED VARIATION

GROUPING MEMORY CELLS INTO SUB-BLOCKS FOR PROGRAM SPEED UNIFORMITY

Method To Recover Cycling Damage And Improve Long Term Data Retention