Zhenyu Hu

Person

Clifton Park, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
High-voltage semiconductor device structures
- Patent number 12,205,949
- Issue date Jan 21, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Zhenyu Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar transistor
- Patent number 12,159,926
- Issue date Dec 3, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single fin structures
- Patent number 12,107,154
- Issue date Oct 1, 2024
- GLOBALFOUNDRIES Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar transistor structure with base layer of varying hor...
- Patent number 11,908,898
- Issue date Feb 20, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-based lateral bipolar junction transistor and method
- Patent number 11,888,031
- Issue date Jan 30, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar transistor
- Patent number 11,810,969
- Issue date Nov 7, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar transistor structure with base over semiconductor b...
- Patent number 11,784,224
- Issue date Oct 10, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single fin structures
- Patent number 11,705,508
- Issue date Jul 18, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar junction transistor device and method of making suc...
- Patent number 11,264,470
- Issue date Mar 1, 2022
- GLOBALFOUNDRIES U.S. INC.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single fin structures
- Patent number 11,127,842
- Issue date Sep 21, 2021
- GLOBALFOUNDRIES U.S. INC.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single diffusion break device for FDSOI
- Patent number 10,957,578
- Issue date Mar 23, 2021
- GLOBALFOUNDRIES U.S. INC.
- Wei Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal resistor structure in at least one cavity in dielectric over...
- Patent number 10,833,067
- Issue date Nov 10, 2020
- GLOBALFOUNDRIES Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of enhanced faceted raised source/drain EPI material for...
- Patent number 10,825,897
- Issue date Nov 3, 2020
- GLOBALFOUNDRIES Inc.
- Wei Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of enhanced faceted raised source/drain epi material for...
- Patent number 10,777,642
- Issue date Sep 15, 2020
- GLOBALFOUNDRIES Inc.
- Wei Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method, apparatus, and system for improving scaling of isolation st...
- Patent number 10,707,303
- Issue date Jul 7, 2020
- GLOBALFOUNDRIES Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to reduce FinFET short channel gate height
- Patent number 10,643,900
- Issue date May 5, 2020
- GLOBALFOUNDRIES Inc.
- Xinyuan Dou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wrap-all-around contact for nanosheet-FET and method of forming same
- Patent number 10,559,656
- Issue date Feb 11, 2020
- GLOBALFOUNDRIES Inc.
- Emilie M. S. Bourjot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Scaled memory structures or other logic devices with middle of the...
- Patent number 10,475,890
- Issue date Nov 12, 2019
- GLOBALFOUNDRIES Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple-layer spacers for field-effect transistors
- Patent number 10,431,665
- Issue date Oct 1, 2019
- GLOBALFOUNDRIES Inc.
- Tao Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate cut method
- Patent number 10,396,206
- Issue date Aug 27, 2019
- GLOBALFOUNDRIES Inc.
- Ashish Kumar Jha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single-curvature cavity for semiconductor epitaxy
- Patent number 10,355,104
- Issue date Jul 16, 2019
- GLOBALFOUNDRIES Inc.
- Yi Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned gate contact and cross-coupling contact formation
- Patent number 10,326,002
- Issue date Jun 18, 2019
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
STI inner spacer to mitigate SDB loading
- Patent number 10,192,746
- Issue date Jan 29, 2019
- GLOBALFOUNDRIES Inc.
- Ashish Kumar Jha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-type field effect transistors with single-diffusion breaks and...
- Patent number 10,121,788
- Issue date Nov 6, 2018
- GLOBALFOUNDRIES Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure including single diffusion break and e...
- Patent number 10,090,382
- Issue date Oct 2, 2018
- GLOBALFOUNDRIES Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with uniform gate heights
- Patent number 10,083,873
- Issue date Sep 25, 2018
- GLOBALFOUNDRIES Inc.
- Xing Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate cut method
- Patent number 10,083,874
- Issue date Sep 25, 2018
- GLOBALFOUNDRIES Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fin thinning providing improved SCE and S/D EPI growth
- Patent number 10,056,486
- Issue date Aug 21, 2018
- GLOBALFOUNDRIES Inc.
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to reduce FinFET short channel gate height
- Patent number 10,043,713
- Issue date Aug 7, 2018
- GLOBALFOUNDRIES Inc.
- Xinyuan Dou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple-layer spacers for field-effect transistors
- Patent number 9,947,769
- Issue date Apr 17, 2018
- GLOBALFOUNDRIES Inc.
- Tao Han
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LATERAL BIPOLAR TRANSISTOR
- Publication number 20240021713
- Publication date Jan 18, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-CHANNEL REPLACEMENT METAL GATE DEVICE
- Publication number 20230395715
- Publication date Dec 7, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Haiting WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE FIN STRUCTURES
- Publication number 20230299181
- Publication date Sep 21, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Haiting WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN ON SILICON ON INSULATOR AND INTEGRATION SCHEMES
- Publication number 20230238452
- Publication date Jul 27, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON GERMANIUM FINS AND INTEGRATION METHODS
- Publication number 20230197849
- Publication date Jun 22, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTORS WITH A NANOSHEET INTRINSIC BASE
- Publication number 20230071998
- Publication date Mar 9, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Haiting WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR TRANSISTOR
- Publication number 20230061219
- Publication date Mar 2, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR TRANSISTOR STRUCTURE WITH BASE OVER SEMICONDUCTOR B...
- Publication number 20230061482
- Publication date Mar 2, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR TRANSISTOR STRUCTURE WITH BASE LAYER OF VARYING HOR...
- Publication number 20230067523
- Publication date Mar 2, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-BASED LATERAL BIPOLAR JUNCTION TRANSISTOR AND METHOD
- Publication number 20230066963
- Publication date Mar 2, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE FIN STRUCTURES
- Publication number 20210367060
- Publication date Nov 25, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Haiting WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR JUNCTION TRANSISTOR DEVICE AND METHOD OF MAKING SUC...
- Publication number 20210273061
- Publication date Sep 2, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE FIN STRUCTURES
- Publication number 20210151581
- Publication date May 20, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Haiting WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING SHORT-CHANNEL AND LONG-CHANNEL TRANSISTOR DEVICE...
- Publication number 20200273953
- Publication date Aug 27, 2020
- GLOBALFOUNDRIES INC.
- Tao Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF ENHANCED FACETED RAISED SOURCE/DRAIN EPI MATERIAL FOR...
- Publication number 20200243646
- Publication date Jul 30, 2020
- GLOBALFOUNDRIES INC.
- Wei Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF ENHANCED FACETED RAISED SOURCE/DRAIN EPI MATERIAL FOR...
- Publication number 20200243645
- Publication date Jul 30, 2020
- GLOBALFOUNDRIES INC.
- Wei Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE DIFFUSION BREAK DEVICE FOR FDSOI
- Publication number 20200105584
- Publication date Apr 2, 2020
- GLOBALFOUNDRIES INC.
- Wei HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE SPACERS FOR TAILORING THE SHAPE OF THE SOURCE AND DRAIN R...
- Publication number 20200020770
- Publication date Jan 16, 2020
- GLOBALFOUNDRIES INC.
- Yi Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WRAP-ALL-AROUND CONTACT FOR NANOSHEET-FET AND METHOD OF FORMING SAME
- Publication number 20190341448
- Publication date Nov 7, 2019
- GLOBALFOUNDRIES INC.
- Emilie M.S. Bourjot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE-CURVATURE CAVITY FOR SEMICONDUCTOR EPITAXY
- Publication number 20190131432
- Publication date May 2, 2019
- GLOBALFOUNDRIES INC.
- Yi Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCALED MEMORY STRUCTURES OR OTHER LOGIC DEVICES WITH MIDDLE OF THE...
- Publication number 20190109197
- Publication date Apr 11, 2019
- GLOBALFOUNDRIES INC.
- Haiting WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STI INNER SPACER TO MITIGATE SDB LOADING
- Publication number 20190035633
- Publication date Jan 31, 2019
- GlobalFoundries, Inc.
- Ashish Kumar Jha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CUT METHOD
- Publication number 20190013245
- Publication date Jan 10, 2019
- GLOBALFOUNDRIES INC.
- Ashish Kumar JHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO REDUCE FINFET SHORT CHANNEL GATE HEIGHT
- Publication number 20180330995
- Publication date Nov 15, 2018
- GLOBALFOUNDRIES INC.
- Xinyuan DOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-TYPE FIELD EFFECT TRANSISTORS WITH SINGLE-DIFFUSION BREAKS AND...
- Publication number 20180323191
- Publication date Nov 8, 2018
- GLOBALFOUNDRIES INC.
- HAITING WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CUT METHOD
- Publication number 20180277440
- Publication date Sep 27, 2018
- GLOBALFOUNDRIES INC.
- Hong YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE-LAYER SPACERS FOR FIELD-EFFECT TRANSISTORS
- Publication number 20180151690
- Publication date May 31, 2018
- GLOBALFOUNDRIES INC.
- Tao Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FIN THINNING PROVIDING IMPROVED SCE AND S/D EPI GROWTH
- Publication number 20170278965
- Publication date Sep 28, 2017
- GLOBALFOUNDRIES INC.
- Shesh Mani PANDEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR IMPROVED FIN PROFILE
- Publication number 20170033224
- Publication date Feb 2, 2017
- GLOBALFOUNDRIES INC.
- Nicholas Vincent LICAUSI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFERENT HEIGHT OF FINS IN SEMICONDUCTOR STRUCTURE
- Publication number 20160315084
- Publication date Oct 27, 2016
- GLOBALFOUNDRIES INC.
- Xusheng WU
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

High-voltage semiconductor device structures

Lateral bipolar transistor

Single fin structures

Lateral bipolar transistor structure with base layer of varying hor...

Fin-based lateral bipolar junction transistor and method

Lateral bipolar transistor

Lateral bipolar transistor structure with base over semiconductor b...

Single fin structures

Lateral bipolar junction transistor device and method of making suc...

Single fin structures

Single diffusion break device for FDSOI

Metal resistor structure in at least one cavity in dielectric over...

Formation of enhanced faceted raised source/drain EPI material for...

Formation of enhanced faceted raised source/drain epi material for...

Method, apparatus, and system for improving scaling of isolation st...

Method to reduce FinFET short channel gate height

Wrap-all-around contact for nanosheet-FET and method of forming same

Scaled memory structures or other logic devices with middle of the...

Multiple-layer spacers for field-effect transistors

Gate cut method

Single-curvature cavity for semiconductor epitaxy

Self-aligned gate contact and cross-coupling contact formation

STI inner spacer to mitigate SDB loading

Fin-type field effect transistors with single-diffusion breaks and...

Integrated circuit structure including single diffusion break and e...

Semiconductor structure with uniform gate heights

Gate cut method

Methods for fin thinning providing improved SCE and S/D EPI growth

Method to reduce FinFET short channel gate height

Multiple-layer spacers for field-effect transistors

Patents Applicationslast 30 patents

LATERAL BIPOLAR TRANSISTOR

MULTI-CHANNEL REPLACEMENT METAL GATE DEVICE

SINGLE FIN STRUCTURES

FIN ON SILICON ON INSULATOR AND INTEGRATION SCHEMES

SILICON GERMANIUM FINS AND INTEGRATION METHODS

BIPOLAR JUNCTION TRANSISTORS WITH A NANOSHEET INTRINSIC BASE

LATERAL BIPOLAR TRANSISTOR

LATERAL BIPOLAR TRANSISTOR STRUCTURE WITH BASE OVER SEMICONDUCTOR B...

LATERAL BIPOLAR TRANSISTOR STRUCTURE WITH BASE LAYER OF VARYING HOR...

FIN-BASED LATERAL BIPOLAR JUNCTION TRANSISTOR AND METHOD

SINGLE FIN STRUCTURES

LATERAL BIPOLAR JUNCTION TRANSISTOR DEVICE AND METHOD OF MAKING SUC...

SINGLE FIN STRUCTURES

METHODS OF FORMING SHORT-CHANNEL AND LONG-CHANNEL TRANSISTOR DEVICE...

FORMATION OF ENHANCED FACETED RAISED SOURCE/DRAIN EPI MATERIAL FOR...

FORMATION OF ENHANCED FACETED RAISED SOURCE/DRAIN EPI MATERIAL FOR...

SINGLE DIFFUSION BREAK DEVICE FOR FDSOI

COMPOSITE SPACERS FOR TAILORING THE SHAPE OF THE SOURCE AND DRAIN R...

WRAP-ALL-AROUND CONTACT FOR NANOSHEET-FET AND METHOD OF FORMING SAME

SINGLE-CURVATURE CAVITY FOR SEMICONDUCTOR EPITAXY

SCALED MEMORY STRUCTURES OR OTHER LOGIC DEVICES WITH MIDDLE OF THE...

STI INNER SPACER TO MITIGATE SDB LOADING

GATE CUT METHOD

METHOD TO REDUCE FINFET SHORT CHANNEL GATE HEIGHT

FIN-TYPE FIELD EFFECT TRANSISTORS WITH SINGLE-DIFFUSION BREAKS AND...

GATE CUT METHOD

MULTIPLE-LAYER SPACERS FOR FIELD-EFFECT TRANSISTORS

METHODS FOR FIN THINNING PROVIDING IMPROVED SCE AND S/D EPI GROWTH

METHOD FOR IMPROVED FIN PROFILE

DIFFERENT HEIGHT OF FINS IN SEMICONDUCTOR STRUCTURE