Zhenyu Lu

Person

Hubei, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Through array contact structure of three-dimensional memory device
- Patent number 12,185,550
- Issue date Dec 31, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Staircase etch control in forming three-dimensional memory device
- Patent number 12,142,575
- Issue date Nov 12, 2024
- Yangtza Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Staircase structure for memory device
- Patent number 12,137,558
- Issue date Nov 5, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid bonding contact structure of three-dimensional memory device
- Patent number 12,137,568
- Issue date Nov 5, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnect structure of three-dimensional memory device
- Patent number 12,137,567
- Issue date Nov 5, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell structure of a three-dimensional memory device
- Patent number 12,063,780
- Issue date Aug 13, 2024
- Yangtze Memory Technologies Co., Ltd.
- Xiaowang Dai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Staircase structure for memory device
- Patent number 12,010,838
- Issue date Jun 11, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices and fabricating methods thereof
- Patent number 11,991,880
- Issue date May 21, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple-stack three-dimensional memory device and fabrication meth...
- Patent number 11,968,832
- Issue date Apr 23, 2024
- Yangtze Memory Technologies Co., Ltd.
- Jun Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Joint opening structures of three-dimensional memory devices and me...
- Patent number 11,956,953
- Issue date Apr 9, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
Information Patent Grant
Method for forming channel hole plug of three-dimensional memory de...
- Patent number 11,943,928
- Issue date Mar 26, 2024
- Yangtze Memory Technologies Co., Ltd.
- Li Hong Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices and methods for forming the same
- Patent number 11,805,646
- Issue date Oct 31, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming three-dimensional integrated wiring structure an...
- Patent number 11,791,265
- Issue date Oct 17, 2023
- Yangtze Memory Technologies Co., Ltd.
- Jifeng Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Through array contact structure of three-dimensional memory device
- Patent number 11,785,776
- Issue date Oct 10, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid bonding contact structure of three-dimensional memory device
- Patent number 11,758,732
- Issue date Sep 12, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices having a plurality of NAND strings...
- Patent number 11,699,657
- Issue date Jul 11, 2023
- Yangtze Memory Technologies Co., Ltd.
- Jifeng Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Through array contact structure of three-dimensional memory device
- Patent number 11,545,505
- Issue date Jan 3, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid bonding contact structure of three-dimensional memory device
- Patent number 11,527,547
- Issue date Dec 13, 2022
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Joint opening structures of three-dimensional memory devices and me...
- Patent number 11,482,532
- Issue date Oct 25, 2022
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices having a plurality of NAND strings
- Patent number 11,462,474
- Issue date Oct 4, 2022
- Yangtze Memory Technologies Co., Ltd.
- Jifeng Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and forming method thereof
- Patent number 11,380,701
- Issue date Jul 5, 2022
- Yangtze Memory Technologies Co., Ltd.
- Yue Qiang Pu
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for forming channel hole plug of three-dimensional memory de...
- Patent number 11,309,327
- Issue date Apr 19, 2022
- Yangtze Memory Technologies Co., Ltd.
- Li Hong Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming three-dimensional integrated wiring structure an...
- Patent number 11,276,642
- Issue date Mar 15, 2022
- Yangtze Memory Technologies Co., Ltd.
- Jifeng Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and forming method thereof
- Patent number 11,271,004
- Issue date Mar 8, 2022
- Yangtze Memory Technologies Co., Ltd.
- Yue Qiang Pu
- G11 - INFORMATION STORAGE
Information Patent Grant
Source structure of three-dimensional memory device and method for...
- Patent number 11,264,397
- Issue date Mar 1, 2022
- Yangtze Memory Technologies Co., Ltd.
- Yushi Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices and methods for forming the same
- Patent number 11,211,397
- Issue date Dec 28, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and forming method thereof
- Patent number 11,211,393
- Issue date Dec 28, 2021
- Yangtze Memory Technologies Co., Ltd.
- Yue Qiang Pu
- G11 - INFORMATION STORAGE
Information Patent Grant
Staircase structure for memory device
- Patent number 11,145,666
- Issue date Oct 12, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell structure of a three-dimensional memory device
- Patent number 11,133,325
- Issue date Sep 28, 2021
- Yangtze Memory Technologies Co., Ltd.
- Xiaowang Dai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Word line contact structure for three-dimensional memory devices an...
- Patent number 11,101,276
- Issue date Aug 24, 2021
- Yangtze Memory Technologies Co., Ltd.
- Jifeng Zhu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
STAIRCASE STRUCTURE FOR MEMORY DEVICE
- Publication number 20250031366
- Publication date Jan 23, 2025
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID BONDING CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20250024683
- Publication date Jan 16, 2025
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERCONNECT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20250017019
- Publication date Jan 9, 2025
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20240407172
- Publication date Dec 5, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF
- Publication number 20240292622
- Publication date Aug 29, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240188291
- Publication date Jun 6, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
Information Patent Application
MULTIPLE-STACK THREE-DIMENSIONAL MEMORY DEVICE AND FABRICATION METH...
- Publication number 20240179911
- Publication date May 30, 2024
- Yangtze Memory Technologies Co., Ltd.
- Jun LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20230422504
- Publication date Dec 28, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC MEMORY DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20230413576
- Publication date Dec 21, 2023
- Wuxi Smart Memories Technologies Co., Ltd.
- Jianhua Sun
- G11 - INFORMATION STORAGE
Information Patent Application
THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20230389323
- Publication date Nov 30, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID BONDING CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20230363169
- Publication date Nov 9, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID BONDING CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20230087468
- Publication date Mar 23, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STAIRCASE STRUCTURE FOR MEMORY DEVICE
- Publication number 20230084008
- Publication date Mar 16, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STAIRCASE STRUCTURE FOR MEMORY DEVICE
- Publication number 20230083030
- Publication date Mar 16, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STAIRCASE ETCH CONTROL IN FORMING THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20230070357
- Publication date Mar 9, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JOINT OPENING STRUCTURES OF THREE-DIMENSIONAL MEMORY DEVICES AND ME...
- Publication number 20230016627
- Publication date Jan 19, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20230005950
- Publication date Jan 5, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING CHANNEL HOLE PLUG OF THREE-DIMENSIONAL MEMORY DE...
- Publication number 20220238556
- Publication date Jul 28, 2022
- Yangtze Memory Technologies Co., Ltd.
- Li Hong XIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING THREE-DIMENSIONAL INTEGRATED WIRING STRUCTURE AN...
- Publication number 20220208677
- Publication date Jun 30, 2022
- Yangtze Memory Technologies Co., Ltd.
- Jifeng ZHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL STRUCTURE OF A THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20210399001
- Publication date Dec 23, 2021
- Yangtze Memory Technologies Co., Ltd.
- Xiaowang DAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES HAVING A PLURALITY OF NAND STRINGS
- Publication number 20210296341
- Publication date Sep 23, 2021
- Yangtze Memory Technologies Co., Ltd.
- Jifeng ZHU
- G11 - INFORMATION STORAGE
Information Patent Application
HYBRID BONDING CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20210134826
- Publication date May 6, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20210126005
- Publication date Apr 29, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Three-Dimensional Memory Devices and Fabricating Methods Thereof
- Publication number 20210118905
- Publication date Apr 22, 2021
- Yangtze Memory Technologies Co., Ltd.
- Yushi HU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND FORMING METHOD THEREOF
- Publication number 20210118896
- Publication date Apr 22, 2021
- Yangtze Memory Technologies Co., Ltd.
- Yue Qiang PU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND FORMING METHOD THEREOF
- Publication number 20210104532
- Publication date Apr 8, 2021
- Yangtze Memory Technologies Co., Ltd.
- Yue Qiang PU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Three-Dimensional Memory Devices and Methods for Forming the Same
- Publication number 20210098491
- Publication date Apr 1, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND FORMING METHOD THEREOF
- Publication number 20210098481
- Publication date Apr 1, 2021
- Yangtze Memory Technologies Co., Ltd.
- Yue Qiang PU
- G11 - INFORMATION STORAGE
Information Patent Application
JOINT OPENING STRUCTURES OF THREE-DIMENSIONAL MEMORY DEVICES AND ME...
- Publication number 20210074718
- Publication date Mar 11, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERCONNECT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20210043643
- Publication date Feb 11, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Through array contact structure of three-dimensional memory device

Staircase etch control in forming three-dimensional memory device

Staircase structure for memory device

Hybrid bonding contact structure of three-dimensional memory device

Interconnect structure of three-dimensional memory device

Memory cell structure of a three-dimensional memory device

Staircase structure for memory device

Three-dimensional memory devices and fabricating methods thereof

Multiple-stack three-dimensional memory device and fabrication meth...

Joint opening structures of three-dimensional memory devices and me...

Method for forming channel hole plug of three-dimensional memory de...

Three-dimensional memory devices and methods for forming the same

Method for forming three-dimensional integrated wiring structure an...

Through array contact structure of three-dimensional memory device

Hybrid bonding contact structure of three-dimensional memory device

Three-dimensional memory devices having a plurality of NAND strings...

Through array contact structure of three-dimensional memory device

Hybrid bonding contact structure of three-dimensional memory device

Joint opening structures of three-dimensional memory devices and me...

Three-dimensional memory devices having a plurality of NAND strings

Memory device and forming method thereof

Method for forming channel hole plug of three-dimensional memory de...

Method for forming three-dimensional integrated wiring structure an...

Memory device and forming method thereof

Source structure of three-dimensional memory device and method for...

Three-dimensional memory devices and methods for forming the same

Memory device and forming method thereof

Staircase structure for memory device

Memory cell structure of a three-dimensional memory device

Word line contact structure for three-dimensional memory devices an...

Patents Applicationslast 30 patents

STAIRCASE STRUCTURE FOR MEMORY DEVICE

HYBRID BONDING CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

INTERCONNECT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF

SEMICONDUCTOR DEVICES

MULTIPLE-STACK THREE-DIMENSIONAL MEMORY DEVICE AND FABRICATION METH...

THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME

FERROELECTRIC MEMORY DEVICE AND METHOD FOR FORMING THE SAME

THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

HYBRID BONDING CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

HYBRID BONDING CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

STAIRCASE STRUCTURE FOR MEMORY DEVICE

STAIRCASE STRUCTURE FOR MEMORY DEVICE

STAIRCASE ETCH CONTROL IN FORMING THREE-DIMENSIONAL MEMORY DEVICE

JOINT OPENING STRUCTURES OF THREE-DIMENSIONAL MEMORY DEVICES AND ME...

THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

METHOD FOR FORMING CHANNEL HOLE PLUG OF THREE-DIMENSIONAL MEMORY DE...

METHOD FOR FORMING THREE-DIMENSIONAL INTEGRATED WIRING STRUCTURE AN...

MEMORY CELL STRUCTURE OF A THREE-DIMENSIONAL MEMORY DEVICE

THREE-DIMENSIONAL MEMORY DEVICES HAVING A PLURALITY OF NAND STRINGS

HYBRID BONDING CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

Three-Dimensional Memory Devices and Fabricating Methods Thereof

MEMORY DEVICE AND FORMING METHOD THEREOF

MEMORY DEVICE AND FORMING METHOD THEREOF

Three-Dimensional Memory Devices and Methods for Forming the Same

MEMORY DEVICE AND FORMING METHOD THEREOF

JOINT OPENING STRUCTURES OF THREE-DIMENSIONAL MEMORY DEVICES AND ME...

INTERCONNECT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE