Zhiliang XIA

Person

Wuhan, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Three dimensional NAND memory device with novel support structures
- Patent number 12,144,175
- Issue date Nov 12, 2024
- Yangtze Memory Technologies Co., Ltd.
- Di Wang
Information Patent Grant
Semiconductor devices having a conductive layer stacking with an in...
- Patent number 12,136,586
- Issue date Nov 5, 2024
- Yangtze Memory Technologies Co., Ltd.
- Linchun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with backside source contact
- Patent number 12,136,618
- Issue date Nov 5, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory devices having vertical transistors and methods for forming...
- Patent number 12,127,393
- Issue date Oct 22, 2024
- Yangtze Memory Technologies Co., Ltd.
- Tao Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices
- Patent number 12,114,498
- Issue date Oct 8, 2024
- Yangtze Memory Technologies Co., Ltd.
- Linchun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices and methods for forming the same
- Patent number 12,113,037
- Issue date Oct 8, 2024
- Yangtze Memory Technologies Co., Ltd.
- Liang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional NAND memory device and method of forming the same
- Patent number 12,096,631
- Issue date Sep 17, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhong Zhang
Information Patent Grant
Peripheral circuit having recess gate transistors and method for fo...
- Patent number 12,089,413
- Issue date Sep 10, 2024
- Yangtze Memory Technologies Co., Ltd.
- Yanwei Shi
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device and method for forming the same
- Patent number 12,082,407
- Issue date Sep 3, 2024
- Yangtze Memory Technologies Co., Ltd.
- Yuancheng Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices having first semiconductor structu...
- Patent number 12,082,408
- Issue date Sep 3, 2024
- Yangtze Memory Technologies Co., Ltd.
- Yuancheng Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory devices having vertical transistors in staggered layouts
- Patent number 12,082,399
- Issue date Sep 3, 2024
- Yangtze Memory Technologies Co., Ltd.
- Dongxue Zhao
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device with backside interconnect structures
- Patent number 12,082,411
- Issue date Sep 3, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices and methods for forming the same
- Patent number 12,069,854
- Issue date Aug 20, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D NAND memory device and method of forming the same
- Patent number 12,068,250
- Issue date Aug 20, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhongwang Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices and methods for forming the same
- Patent number 12,058,858
- Issue date Aug 6, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming contact structures and semiconductor devices in...
- Patent number 12,057,372
- Issue date Aug 6, 2024
- Yangtze Memory Technologies Co., Ltd.
- Linchun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Staircase structure with multiple divisions for three-dimensional m...
- Patent number 12,052,870
- Issue date Jul 30, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming three-dimensional memory devices with backside...
- Patent number 12,048,151
- Issue date Jul 23, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
Information Patent Grant
3D NAND memory device and method of forming the same
- Patent number 12,046,555
- Issue date Jul 23, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhongwang Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices and methods for forming the same
- Patent number 12,048,148
- Issue date Jul 23, 2024
- Yangtze Memory Technologies Co., Ltd.
- Linchun Wu
Information Patent Grant
Three-dimensional NAND memory device and method of forming the same
- Patent number 12,041,773
- Issue date Jul 16, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhongwang Sun
- G11 - INFORMATION STORAGE
Information Patent Grant
3D NAND memory device and method of forming the same
- Patent number 12,033,944
- Issue date Jul 9, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhongwang Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical memory devices and methods for operating the same
- Patent number 12,027,207
- Issue date Jul 2, 2024
- Yangtze Memory Technologies Co., Ltd.
- DongXue Zhao
- G11 - INFORMATION STORAGE
Information Patent Grant
Local contacts of three-dimensional memory devices and methods for...
- Patent number 12,022,656
- Issue date Jun 25, 2024
- Yangtze Memory Technologies Co., Ltd.
- Jianzhong Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices
- Patent number 12,020,750
- Issue date Jun 25, 2024
- Yangtze Memory Technologies Co., Ltd.
- Yuancheng Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Staircase structure in three-dimensional memory device and method f...
- Patent number 12,002,757
- Issue date Jun 4, 2024
- Yangtze Memory Technologies Co., Ltd.
- Di Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices and methods for forming the same
- Patent number 11,996,152
- Issue date May 28, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device and fabrication method thereof
- Patent number 11,980,030
- Issue date May 7, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhong Zhang
Information Patent Grant
Three-dimensional memory devices and fabricating methods thereof
- Patent number 11,974,431
- Issue date Apr 30, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming three-dimensional memory devices with backside...
- Patent number 11,963,349
- Issue date Apr 16, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang

Patents Applicationslast 30 patents

Information Patent Application
PERIPHERAL CIRCUIT HAVING RECESS GATE TRANSISTORS AND METHOD FOR FO...
- Publication number 20240389331
- Publication date Nov 21, 2024
- Yangtze Memory Technologies Co., Ltd.
- Yanwei Shi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES, FABRICATION METHODS OF SEMICONDUCTOR DEVICES...
- Publication number 20240387408
- Publication date Nov 21, 2024
- Yangtze Memory Technologies Co., Ltd.
- Wei Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION METHOD OF SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE AN...
- Publication number 20240389307
- Publication date Nov 21, 2024
- Yangtze Memory Technologies Co., Ltd.
- Dongxue ZHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAFER DICING DEVICES AND METHODS OF WAFER DICING
- Publication number 20240375212
- Publication date Nov 14, 2024
- Yangtze Memory Technologies Co., Ltd.
- Wei Xie
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Application
SEMICONDUCTOR STRUCTURE, DICING METHOD THEREOF, AND MEMORY
- Publication number 20240379578
- Publication date Nov 14, 2024
- Yangtze Memory Technologies Co., Ltd.
- Dongyu Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORIES AND FABRICATION METHODS THEREOF, MEMORY SYSTEMS, AND ELECT...
- Publication number 20240379497
- Publication date Nov 14, 2024
- Yangtze Memory Technologies Co., Ltd.
- Hao Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STAIRCASE CONNECTION STRUCTURE FOR THREE-DIMENSIONAL MEMORY DEVICES
- Publication number 20240355734
- Publication date Oct 24, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun ZHANG
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20240339402
- Publication date Oct 10, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhong ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240339404
- Publication date Oct 10, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhongwang SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH BACKSIDE INTERCONNECT STRUCTURES
- Publication number 20240341096
- Publication date Oct 10, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20240312522
- Publication date Sep 19, 2024
- Yangtze Memory Technologies Co., Ltd.
- Yuancheng Yang
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD AND SYSTEM FOR ADJUSTABLE TOP SELECT GATE CONTROL
- Publication number 20240304246
- Publication date Sep 12, 2024
- Yangtze Memory Technologies Co., Ltd.
- Jianquan JIA
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY PROGRAMMING METHOD, MEMORY DEVICE, AND MEMORY SYSTEM
- Publication number 20240295960
- Publication date Sep 5, 2024
- Yangtze Memory Technologies Co., Ltd.
- Yifan Li
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES
- Publication number 20240292629
- Publication date Aug 29, 2024
- Yangtze Memory Technologies Co., Ltd.
- Dongxue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL MEMORY DEVICES AND METHODS FOR OPERATING THE SAME
- Publication number 20240282376
- Publication date Aug 22, 2024
- Yangtze Memory Technologies Co., Ltd.
- DongXue ZHAO
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS FOR FORMING CONTACT STRUCTURES AND SEMICONDUCTOR DEVICES TH...
- Publication number 20240282673
- Publication date Aug 22, 2024
- Yangtze Memory Technologies Co., Ltd.
- Linchun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPERATION METHODS OF MEMORIES, MEMORIES, AND STORAGE SYSTEMS
- Publication number 20240274204
- Publication date Aug 15, 2024
- Yangtze Memory Technologies Co., Ltd.
- Wenhui Pei
- G11 - INFORMATION STORAGE
Information Patent Application
STAIRCASE STRUCTURE IN THREE-DIMENSIONAL MEMORY DEVICE AND METHOD F...
- Publication number 20240274535
- Publication date Aug 15, 2024
- Yangtze Memory Technologies Co., Ltd.
- Di Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20240251558
- Publication date Jul 25, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhong ZHANG
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF
- Publication number 20240224526
- Publication date Jul 4, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20240224517
- Publication date Jul 4, 2024
- Yangtze Memory Technologies Co., Ltd.
- Yang Chen
Information Patent Application
MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20240215234
- Publication date Jun 27, 2024
- Yangtze Memory Technologies Co., Ltd.
- Di Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE DIMENSIONAL (3D) MEMORY DEVICE AND FABRICATION METHOD
- Publication number 20240215237
- Publication date Jun 27, 2024
- Yangtze Memory Technologies Co., Ltd.
- Yi YANG
Information Patent Application
GATE LINE STRUCTURE TO REDUCE WAFER BOW
- Publication number 20240215239
- Publication date Jun 27, 2024
- Yangtze Memory Technologies Co., Ltd.
- Shuangshuang WU
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF
- Publication number 20240215273
- Publication date Jun 27, 2024
- Yangtze Memory Technologies Co., Ltd.
- Yuancheng Yang
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF
- Publication number 20240212753
- Publication date Jun 27, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF
- Publication number 20240215272
- Publication date Jun 27, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20240215235
- Publication date Jun 27, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240215458
- Publication date Jun 27, 2024
- Yangtze Memory Technologies Co., Ltd.
- Yuxuan FANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF
- Publication number 20240215271
- Publication date Jun 27, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS

Zhiliang XIA

Person

Patents Grantslast 30 patents

Three dimensional NAND memory device with novel support structures

Semiconductor devices having a conductive layer stacking with an in...

Three-dimensional memory device with backside source contact

Memory devices having vertical transistors and methods for forming...

Three-dimensional memory devices

Three-dimensional memory devices and methods for forming the same

Three-dimensional NAND memory device and method of forming the same

Peripheral circuit having recess gate transistors and method for fo...

Three-dimensional memory device and method for forming the same

Three-dimensional memory devices having first semiconductor structu...

Memory devices having vertical transistors in staggered layouts

Three-dimensional memory device with backside interconnect structures

Three-dimensional memory devices and methods for forming the same

3D NAND memory device and method of forming the same

Three-dimensional memory devices and methods for forming the same

Methods for forming contact structures and semiconductor devices in...

Staircase structure with multiple divisions for three-dimensional m...

Methods for forming three-dimensional memory devices with backside...

3D NAND memory device and method of forming the same

Three-dimensional memory devices and methods for forming the same

Three-dimensional NAND memory device and method of forming the same

3D NAND memory device and method of forming the same

Vertical memory devices and methods for operating the same

Local contacts of three-dimensional memory devices and methods for...

Three-dimensional memory devices

Staircase structure in three-dimensional memory device and method f...

Three-dimensional memory devices and methods for forming the same

Three-dimensional memory device and fabrication method thereof

Three-dimensional memory devices and fabricating methods thereof

Methods for forming three-dimensional memory devices with backside...

Patents Applicationslast 30 patents

PERIPHERAL CIRCUIT HAVING RECESS GATE TRANSISTORS AND METHOD FOR FO...

SEMICONDUCTOR DEVICES, FABRICATION METHODS OF SEMICONDUCTOR DEVICES...

FABRICATION METHOD OF SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE AN...

WAFER DICING DEVICES AND METHODS OF WAFER DICING

SEMICONDUCTOR STRUCTURE, DICING METHOD THEREOF, AND MEMORY

MEMORIES AND FABRICATION METHODS THEREOF, MEMORY SYSTEMS, AND ELECT...

STAIRCASE CONNECTION STRUCTURE FOR THREE-DIMENSIONAL MEMORY DEVICES

MEMORY DEVICE AND FABRICATION METHOD THEREOF

3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME

THREE-DIMENSIONAL MEMORY DEVICE WITH BACKSIDE INTERCONNECT STRUCTURES

THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME

METHOD AND SYSTEM FOR ADJUSTABLE TOP SELECT GATE CONTROL

MEMORY PROGRAMMING METHOD, MEMORY DEVICE, AND MEMORY SYSTEM

THREE-DIMENSIONAL MEMORY DEVICES

VERTICAL MEMORY DEVICES AND METHODS FOR OPERATING THE SAME

METHODS FOR FORMING CONTACT STRUCTURES AND SEMICONDUCTOR DEVICES TH...

OPERATION METHODS OF MEMORIES, MEMORIES, AND STORAGE SYSTEMS

STAIRCASE STRUCTURE IN THREE-DIMENSIONAL MEMORY DEVICE AND METHOD F...

THREE-DIMENSIONAL MEMORY DEVICE AND FABRICATION METHOD THEREOF

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF

THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME

MEMORY DEVICES AND METHODS FOR FORMING THE SAME

THREE DIMENSIONAL (3D) MEMORY DEVICE AND FABRICATION METHOD

GATE LINE STRUCTURE TO REDUCE WAFER BOW

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF

MEMORY DEVICES AND METHODS FOR FORMING THE SAME

MEMORY DEVICE AND METHOD OF FORMING THE SAME

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF