Zhiqiang ZHANG

Person

Hefei, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Impedance calibration circuit
- Patent number 12,224,746
- Issue date Feb 11, 2025
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Yanian Shao
- G11 - INFORMATION STORAGE
Information Patent Grant
Oscillation period detection circuit and method, and semiconductor...
- Patent number 12,188,981
- Issue date Jan 7, 2025
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Zhiqiang Zhang
- G01 - MEASURING TESTING
Information Patent Grant
Impedance calibration circuit, impedance calibration method, and me...
- Patent number 12,132,479
- Issue date Oct 29, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Zhiqiang Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Receiver, memory and testing method
- Patent number 12,021,525
- Issue date Jun 25, 2024
- Changxin Memory Technologies, Inc.
- Zhiqiang Zhang
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Phase adjusting circuit, delay locking circuit, and memory
- Patent number 11,962,309
- Issue date Apr 16, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Zhiqiang Zhang
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Dual reference voltage generator, equalizer circuit, and memory
- Patent number 11,881,281
- Issue date Jan 23, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Zhiqiang Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Comparison circuit and memory
- Patent number 11,862,225
- Issue date Jan 2, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Zhiqiang Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Circuit and method for data transmission, and storage apparatus
- Patent number 11,862,232
- Issue date Jan 2, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Zhiqiang Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Data sampling circuit and semiconductor memory
- Patent number 11,854,636
- Issue date Dec 26, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Zhiqiang Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Equalizer circuit, method for sampling data and memory
- Patent number 11,595,234
- Issue date Feb 28, 2023
- Changxin Memory Technologies, Inc.
- Zhiqiang Zhang
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Offset voltage correction circuit and offset voltage correction method
- Patent number 11,349,467
- Issue date May 31, 2022
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Zhiqiang Zhang
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
DATA SAMPLING CIRCUIT, DELAY DETECTION CIRCUIT AND MEMORY
- Publication number 20240096397
- Publication date Mar 21, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Zhiqiang ZHANG
- G11 - INFORMATION STORAGE
Information Patent Application
WRITE LEVELING CIRCUIT APPLIED TO MEMORY, METHOD FOR CONTROLLING WR...
- Publication number 20240087627
- Publication date Mar 14, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Zhiqiang ZHANG
- G11 - INFORMATION STORAGE
Information Patent Application
WRITE LEVELING CIRCUIT APPLIED TO MEMORY, AND METHOD AND APPARATUS...
- Publication number 20240062793
- Publication date Feb 22, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Zhiqiang ZHANG
- G11 - INFORMATION STORAGE
Information Patent Application
IMPEDANCE CALIBRATION CIRCUIT
- Publication number 20240039535
- Publication date Feb 1, 2024
- Changxin Memory Technologies, Inc.
- Yanian SHAO
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE ADJUSTING CIRCUIT, DELAY LOCKING CIRCUIT, AND MEMORY
- Publication number 20230396256
- Publication date Dec 7, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Zhiqiang ZHANG
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
CONTROL METHOD, SEMICONDUCTOR MEMORY, AND ELECTRONIC DEVICE
- Publication number 20230307081
- Publication date Sep 28, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- YoonJoo EOM
- G11 - INFORMATION STORAGE
Information Patent Application
CONTROL METHOD, SEMICONDUCTOR MEMORY, AND ELECTRONIC DEVICE
- Publication number 20230307082
- Publication date Sep 28, 2023
- ChangXin Memory Technologies, Inc.
- YOONJOO EOM
- G11 - INFORMATION STORAGE
Information Patent Application
CONTROL METHOD, SEMICONDUCTOR MEMORY, AND ELECTRONIC DEVICE
- Publication number 20230307083
- Publication date Sep 28, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- YOONJOO EOM
- G11 - INFORMATION STORAGE
Information Patent Application
CIRCUIT AND METHOD FOR DATA TRANSMISSION, AND STORAGE APPARATUS
- Publication number 20230127370
- Publication date Apr 27, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Zhiqiang ZHANG
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
DATA SAMPLING CIRCUIT AND SEMICONDUCTOR MEMORY
- Publication number 20230101821
- Publication date Mar 30, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Zhiqiang ZHANG
- G11 - INFORMATION STORAGE
Information Patent Application
OSCILLATION PERIOD DETECTION CIRCUIT AND METHOD, AND SEMICONDUCTOR...
- Publication number 20230071369
- Publication date Mar 9, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Zhiqiang ZHANG
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
IMPEDANCE CALIBRATION CIRCUIT, IMPEDANCE CALIBRATION METHOD, AND ME...
- Publication number 20230015113
- Publication date Jan 19, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Zhiqiang ZHANG
- G11 - INFORMATION STORAGE
Information Patent Application
RECEIVER, MEMORY AND TESTING METHOD
- Publication number 20230019429
- Publication date Jan 19, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Zhiqiang ZHANG
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
COMPARISON CIRCUIT AND MEMORY
- Publication number 20220375506
- Publication date Nov 24, 2022
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Zhiqiang ZHANG
- G11 - INFORMATION STORAGE
Information Patent Application
OFFSET VOLTAGE CORRECTION CIRCUIT AND OFFSET VOLTAGE CORRECTION METHOD
- Publication number 20220140824
- Publication date May 5, 2022
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Zhiqiang ZHANG
- G11 - INFORMATION STORAGE
Information Patent Application
EQUALIZER CIRCUIT, METHOD FOR SAMPLING DATA AND MEMORY
- Publication number 20220094576
- Publication date Mar 24, 2022
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Zhiqiang ZHANG
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
DUAL REFERENCE VOLTAGE GENERATOR, EQUALIZER CIRCUIT, AND MEMORY
- Publication number 20220093140
- Publication date Mar 24, 2022
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Zhiqiang ZHANG
- G11 - INFORMATION STORAGE

Zhiqiang ZHANG

Person

Patents Grantslast 30 patents

Impedance calibration circuit

Oscillation period detection circuit and method, and semiconductor...

Impedance calibration circuit, impedance calibration method, and me...

Receiver, memory and testing method

Phase adjusting circuit, delay locking circuit, and memory

Dual reference voltage generator, equalizer circuit, and memory

Comparison circuit and memory

Circuit and method for data transmission, and storage apparatus

Data sampling circuit and semiconductor memory

Equalizer circuit, method for sampling data and memory

Offset voltage correction circuit and offset voltage correction method

Patents Applicationslast 30 patents

DATA SAMPLING CIRCUIT, DELAY DETECTION CIRCUIT AND MEMORY

WRITE LEVELING CIRCUIT APPLIED TO MEMORY, METHOD FOR CONTROLLING WR...

WRITE LEVELING CIRCUIT APPLIED TO MEMORY, AND METHOD AND APPARATUS...

IMPEDANCE CALIBRATION CIRCUIT

PHASE ADJUSTING CIRCUIT, DELAY LOCKING CIRCUIT, AND MEMORY

CONTROL METHOD, SEMICONDUCTOR MEMORY, AND ELECTRONIC DEVICE

CONTROL METHOD, SEMICONDUCTOR MEMORY, AND ELECTRONIC DEVICE

CONTROL METHOD, SEMICONDUCTOR MEMORY, AND ELECTRONIC DEVICE

CIRCUIT AND METHOD FOR DATA TRANSMISSION, AND STORAGE APPARATUS

DATA SAMPLING CIRCUIT AND SEMICONDUCTOR MEMORY

OSCILLATION PERIOD DETECTION CIRCUIT AND METHOD, AND SEMICONDUCTOR...

IMPEDANCE CALIBRATION CIRCUIT, IMPEDANCE CALIBRATION METHOD, AND ME...

RECEIVER, MEMORY AND TESTING METHOD

COMPARISON CIRCUIT AND MEMORY

OFFSET VOLTAGE CORRECTION CIRCUIT AND OFFSET VOLTAGE CORRECTION METHOD

EQUALIZER CIRCUIT, METHOD FOR SAMPLING DATA AND MEMORY

DUAL REFERENCE VOLTAGE GENERATOR, EQUALIZER CIRCUIT, AND MEMORY