Zhong Shan Hong

Person

Shanghai, CN

People

Patents Grantslast 30 patents

Information Patent Grant
FinFET device and fabrication method thereof
- Patent number 10,453,962
- Issue date Oct 22, 2019
- Semiconductor Manufacturing International (Shanghai) Corporation
- Nan Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and fabrication method thereof
- Patent number 10,319,839
- Issue date Jun 11, 2019
- Semiconductor Manufacturing International (Shanghai) Corporation
- Zhong Shan Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Scalable flash EEPROM memory cell with floating gate spacer wrapped...
- Patent number 8,119,479
- Issue date Feb 21, 2012
- Semiconductor Manufacturing International (Shanghai) Corporation
- Jin Da
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating MOS devices with a salicided gate and source...
- Patent number 7,842,578
- Issue date Nov 30, 2010
- Semiconductor Manufacturing International (Shanghai) Corporation
- Zhong Shan Hong
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NON-VOLATILE MEMORY AND FABRICATION METHOD THEREOF
- Publication number 20200006654
- Publication date Jan 2, 2020
- Semiconductor Manufacturing International (Shanghai) Corporation
- Min-Hwa CHI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
FINFET DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20180323300
- Publication date Nov 8, 2018
- Semiconductor Manufacturing International (Shanghai) Corporation
- Nan WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF
- Publication number 20170345916
- Publication date Nov 30, 2017
- Semiconductor Manufacturing International (Shanghai) Corporation
- Zhong Shan HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCALABLE FLASH EEPROM MEMORY CELL WITH FLOATING GATE SPACER WRAPPED...
- Publication number 20120146123
- Publication date Jun 14, 2012
- Semiconductor Manufacturing International (Shanghai) Corporation
- Jin Da
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCALABLE FLASH EEPROM MEMORY CELL WITH FLOATING GATE SPACER WRAPPED...
- Publication number 20110089479
- Publication date Apr 21, 2011
- Semiconductor Manufacturing International (Shanghai) Corporation
- Jin Da
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR FABRICATING MOS DEVICES WITH A SALICIDED G...
- Publication number 20080145990
- Publication date Jun 19, 2008
- Semiconductor Manufacturing International (Shanghai) Corporation
- Zhong Shan Hong
- H01 - BASIC ELECTRIC ELEMENTS

Zhong Shan Hong

Person

Patents Grantslast 30 patents

FinFET device and fabrication method thereof

Semiconductor structure and fabrication method thereof

Scalable flash EEPROM memory cell with floating gate spacer wrapped...

Method for fabricating MOS devices with a salicided gate and source...

Patents Applicationslast 30 patents

NON-VOLATILE MEMORY AND FABRICATION METHOD THEREOF

FINFET DEVICE AND FABRICATION METHOD THEREOF

SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF

SCALABLE FLASH EEPROM MEMORY CELL WITH FLOATING GATE SPACER WRAPPED...

SCALABLE FLASH EEPROM MEMORY CELL WITH FLOATING GATE SPACER WRAPPED...

METHOD AND STRUCTURE FOR FABRICATING MOS DEVICES WITH A SALICIDED G...