Zhong Zhang

Person

Guangdong, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Three-dimensional NAND memory device and method of forming the same
- Patent number 12,096,631
- Issue date Sep 17, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhong Zhang
Information Patent Grant
Barrier layers for word line contacts in a three-dimensional NAND m...
- Patent number 12,094,767
- Issue date Sep 17, 2024
- Yangtze Memory Technologies Co., Ltd.
- Ling Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with backside interconnect structures
- Patent number 12,082,411
- Issue date Sep 3, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D NAND memory device and method of forming the same
- Patent number 12,068,250
- Issue date Aug 20, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhongwang Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell structure of a three-dimensional memory device
- Patent number 12,063,780
- Issue date Aug 13, 2024
- Yangtze Memory Technologies Co., Ltd.
- Xiaowang Dai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming contact structures and semiconductor devices in...
- Patent number 12,057,372
- Issue date Aug 6, 2024
- Yangtze Memory Technologies Co., Ltd.
- Linchun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices with support structures and method...
- Patent number 12,058,865
- Issue date Aug 6, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Staircase structure with multiple divisions for three-dimensional m...
- Patent number 12,052,870
- Issue date Jul 30, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device having source-select-gate cut struc...
- Patent number 12,048,149
- Issue date Jul 23, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhong Zhang
Information Patent Grant
3D NAND memory device and method of forming the same
- Patent number 12,046,555
- Issue date Jul 23, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhongwang Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D NAND memory device and method of forming the same
- Patent number 12,033,944
- Issue date Jul 9, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhongwang Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional NAND memory device and method of forming the same
- Patent number 12,035,525
- Issue date Jul 9, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhong Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory devices and methods for forming the same
- Patent number 12,033,957
- Issue date Jul 9, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Staircase structure in three-dimensional memory device and method f...
- Patent number 12,002,757
- Issue date Jun 4, 2024
- Yangtze Memory Technologies Co., Ltd.
- Di Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device and fabrication method thereof
- Patent number 11,980,030
- Issue date May 7, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhong Zhang
Information Patent Grant
Three-dimensional memory devices and fabricating methods thereof
- Patent number 11,974,431
- Issue date Apr 30, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming three-dimensional memory devices with supportin...
- Patent number 11,901,313
- Issue date Feb 13, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device having source-select-gate cut struc...
- Patent number 11,871,573
- Issue date Jan 9, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact structures for three-dimensional memory
- Patent number 11,862,565
- Issue date Jan 2, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhongwang Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical memory devices
- Patent number 11,864,388
- Issue date Jan 2, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Concentric staircase structure in three-dimensional memory device a...
- Patent number 11,849,575
- Issue date Dec 19, 2023
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
Information Patent Grant
Memory device and fabrication method thereof
- Patent number 11,837,541
- Issue date Dec 5, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical memory devices
- Patent number 11,812,614
- Issue date Nov 7, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device with bottom-select-gate structure and method for form...
- Patent number 11,749,737
- Issue date Sep 5, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhongwang Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Staircase structure in three-dimensional memory device and method f...
- Patent number 11,699,659
- Issue date Jul 11, 2023
- Yangtze Memory Technologies Co., Ltd.
- Di Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming memory device comprising bottom-select-gate stru...
- Patent number 11,699,732
- Issue date Jul 11, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhongwang Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Staircase structure in three-dimensional memory device and method f...
- Patent number 11,696,439
- Issue date Jul 4, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhong Zhang
Information Patent Grant
Staircase structure in three-dimensional memory device and method f...
- Patent number 11,670,592
- Issue date Jun 6, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Staircase structure in three-dimensional memory device and method f...
- Patent number 11,665,892
- Issue date May 30, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhongwang Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices with supporting structure for stai...
- Patent number 11,647,632
- Issue date May 9, 2023
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MEMORY DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20240339402
- Publication date Oct 10, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhong ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240339404
- Publication date Oct 10, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhongwang SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH BACKSIDE INTERCONNECT STRUCTURES
- Publication number 20240341096
- Publication date Oct 10, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING THREE-DIMENSIONAL MEMORY DEVICES
- Publication number 20240321777
- Publication date Sep 26, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE WITH WORD LINES AND CONTACT LANDING
- Publication number 20240298443
- Publication date Sep 5, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhong Zhang
Information Patent Application
METHODS FOR FORMING CONTACT STRUCTURES AND SEMICONDUCTOR DEVICES TH...
- Publication number 20240282673
- Publication date Aug 22, 2024
- Yangtze Memory Technologies Co., Ltd.
- Linchun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STAIRCASE STRUCTURE IN THREE-DIMENSIONAL MEMORY DEVICE AND METHOD F...
- Publication number 20240274535
- Publication date Aug 15, 2024
- Yangtze Memory Technologies Co., Ltd.
- Di Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20240251558
- Publication date Jul 25, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhong ZHANG
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF
- Publication number 20240224526
- Publication date Jul 4, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20240107760
- Publication date Mar 28, 2024
- Yangtze Memory Technologies Co., Ltd.
- Di Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20240107761
- Publication date Mar 28, 2024
- Yangtze Memory Technologies Co., Ltd.
- Di Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE HAVING SOURCE-SELECT-GATE CUT STRUC...
- Publication number 20240090227
- Publication date Mar 14, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhong ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL MEMORY DEVICES
- Publication number 20240074197
- Publication date Feb 29, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhong ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240038663
- Publication date Feb 1, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhongwang SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20230411285
- Publication date Dec 21, 2023
- Yangtze Memory Technologies Co., Ltd.
- Di Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE HAVING STAIRCASE STRUCTURE AND METH...
- Publication number 20230413542
- Publication date Dec 21, 2023
- Yangtze Memory Technologies Co., Ltd.
- Ling Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20230282579
- Publication date Sep 7, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhongwang SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STAIRCASE STRUCTURE IN THREE-DIMENSIONAL MEMORY DEVICE AND METHOD F...
- Publication number 20230276620
- Publication date Aug 31, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhong ZHANG
Information Patent Application
STAIRCASE STRUCTURE IN THREE-DIMENSIONAL MEMORY DEVICE AND METHOD F...
- Publication number 20230253319
- Publication date Aug 10, 2023
- Yangtze Memory Technologies Co., Ltd.
- Di Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BARRIER LAYERS FOR WORD LINE CONTACTS IN A THREE-DIMENSIONAL NAND M...
- Publication number 20230197507
- Publication date Jun 22, 2023
- Yangtze Memory Technologies Co., Ltd.
- Ling XU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL MEMORY DEVICES
- Publication number 20230157026
- Publication date May 18, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhong ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE HAVING STAIRCASE STRUCTURE AND METH...
- Publication number 20230133874
- Publication date May 4, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING CONTACT STRUCTURES AND SEMICONDUCTOR DEVICES TH...
- Publication number 20230118742
- Publication date Apr 20, 2023
- Yangtze Memory Technologies Co., Ltd.
- Linchun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20230098143
- Publication date Mar 30, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhong Zhang
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20220399285
- Publication date Dec 15, 2022
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Zhong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF
- Publication number 20220310650
- Publication date Sep 29, 2022
- Yangtze Memory Technologies Co., Ltd.
- Zhong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING THREE-DIMENSIONAL MEMORY DEVICES WITH SUPPORTIN...
- Publication number 20220293533
- Publication date Sep 15, 2022
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT STRUCTURES FOR THREE-DIMENSIONAL MEMORY DEVICES AND METHODS...
- Publication number 20220270972
- Publication date Aug 25, 2022
- Yangtze Memory Technologies Co.,Ltd.
- Di WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20220246527
- Publication date Aug 4, 2022
- Yangtze Memory Technologies Co., Ltd.
- Zhongwang SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE HAVING SOURCE-SELECT-GATE CUT STRUC...
- Publication number 20220208775
- Publication date Jun 30, 2022
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Zhong ZHANG
- H01 - BASIC ELECTRIC ELEMENTS

Zhong Zhang

Person

Patents Grantslast 30 patents

Three-dimensional NAND memory device and method of forming the same

Barrier layers for word line contacts in a three-dimensional NAND m...

Three-dimensional memory device with backside interconnect structures

3D NAND memory device and method of forming the same

Memory cell structure of a three-dimensional memory device

Methods for forming contact structures and semiconductor devices in...

Three-dimensional memory devices with support structures and method...

Staircase structure with multiple divisions for three-dimensional m...

Three-dimensional memory device having source-select-gate cut struc...

3D NAND memory device and method of forming the same

3D NAND memory device and method of forming the same

Three-dimensional NAND memory device and method of forming the same

Three-dimensional memory devices and methods for forming the same

Staircase structure in three-dimensional memory device and method f...

Three-dimensional memory device and fabrication method thereof

Three-dimensional memory devices and fabricating methods thereof

Methods for forming three-dimensional memory devices with supportin...

Three-dimensional memory device having source-select-gate cut struc...

Contact structures for three-dimensional memory

Vertical memory devices

Concentric staircase structure in three-dimensional memory device a...

Memory device and fabrication method thereof

Vertical memory devices

Memory device with bottom-select-gate structure and method for form...

Staircase structure in three-dimensional memory device and method f...

Method for forming memory device comprising bottom-select-gate stru...

Staircase structure in three-dimensional memory device and method f...

Staircase structure in three-dimensional memory device and method f...

Staircase structure in three-dimensional memory device and method f...

Three-dimensional memory devices with supporting structure for stai...

Patents Applicationslast 30 patents

MEMORY DEVICE AND FABRICATION METHOD THEREOF

3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME

THREE-DIMENSIONAL MEMORY DEVICE WITH BACKSIDE INTERCONNECT STRUCTURES

METHODS FOR FORMING THREE-DIMENSIONAL MEMORY DEVICES

MEMORY DEVICE WITH WORD LINES AND CONTACT LANDING

METHODS FOR FORMING CONTACT STRUCTURES AND SEMICONDUCTOR DEVICES TH...

STAIRCASE STRUCTURE IN THREE-DIMENSIONAL MEMORY DEVICE AND METHOD F...

THREE-DIMENSIONAL MEMORY DEVICE AND FABRICATION METHOD THEREOF

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF

THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME

THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME

THREE-DIMENSIONAL MEMORY DEVICE HAVING SOURCE-SELECT-GATE CUT STRUC...

VERTICAL MEMORY DEVICES

3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME

THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME

THREE-DIMENSIONAL MEMORY DEVICE HAVING STAIRCASE STRUCTURE AND METH...

3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME

STAIRCASE STRUCTURE IN THREE-DIMENSIONAL MEMORY DEVICE AND METHOD F...

STAIRCASE STRUCTURE IN THREE-DIMENSIONAL MEMORY DEVICE AND METHOD F...

BARRIER LAYERS FOR WORD LINE CONTACTS IN A THREE-DIMENSIONAL NAND M...

VERTICAL MEMORY DEVICES

THREE-DIMENSIONAL MEMORY DEVICE HAVING STAIRCASE STRUCTURE AND METH...

METHODS FOR FORMING CONTACT STRUCTURES AND SEMICONDUCTOR DEVICES TH...

THREE-DIMENSIONAL NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME

THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF

METHODS FOR FORMING THREE-DIMENSIONAL MEMORY DEVICES WITH SUPPORTIN...

CONTACT STRUCTURES FOR THREE-DIMENSIONAL MEMORY DEVICES AND METHODS...

3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME

THREE-DIMENSIONAL MEMORY DEVICE HAVING SOURCE-SELECT-GATE CUT STRUC...