Zhongda Li

Person

Somerset, NJ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Planar multi-implanted JFET
- Patent number 10,446,695
- Issue date Oct 15, 2019
- United Silicone Carbide, Inc.
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical JFET made using a reduced masked set
- Patent number 10,367,098
- Issue date Jul 30, 2019
- United Silicon Carbide, Inc.
- Zhongda Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench vertical JFET with ladder termination
- Patent number 10,367,099
- Issue date Jul 30, 2019
- United Silicon Carbide, Inc.
- Zhongda Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar triple-implanted JFET
- Patent number 10,121,907
- Issue date Nov 6, 2018
- United Silicon Carbide, Inc.
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical JFET made using a reduced mask set
- Patent number 10,056,500
- Issue date Aug 21, 2018
- United Silicon Carbide, Inc.
- Zhongda Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench vertical JFET with ladder termination
- Patent number 10,050,154
- Issue date Aug 14, 2018
- United Silicon Carbide, Inc.
- Zhongda Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar triple-implanted JFET
- Patent number 9,653,618
- Issue date May 16, 2017
- United Silicon Carbide, Inc.
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithically integrated cascode switches
- Patent number 9,148,139
- Issue date Sep 29, 2015
- United Silicon Carbide, Inc.
- Anup Bhalla
- H03 - BASIC ELECTRONIC CIRCUITRY

Patents Applicationslast 30 patents

Information Patent Application
VERTICAL JUNCTION FIELD-EFFECT TRANSISTORS WITH SOURCE-DRAIN DIODE...
- Publication number 20240421151
- Publication date Dec 19, 2024
- Qorvo US, Inc.
- Zhongda Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench Vertical JFET With Ladder Termination
- Publication number 20180342626
- Publication date Nov 29, 2018
- UNITED SILICON CARBIDE, INC.
- Zhongda Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical JFET Made Using A Reduced Masked Set
- Publication number 20180226513
- Publication date Aug 9, 2018
- UNITED SILICON CARBIDE, INC.
- Zhongda Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Planar Multi-implanted JFET
- Publication number 20170213917
- Publication date Jul 27, 2017
- UNITED SILICON CARBIDE, INC.
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench Vertical JFET With Ladder Termination
- Publication number 20170133518
- Publication date May 11, 2017
- UNITED SILICON CARBIDE, INC.
- Zhongda Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Planar Triple-implanted JFET
- Publication number 20170117392
- Publication date Apr 27, 2017
- UNITED SILICON CARBIDE, INC.
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLANAR TRIPLE-IMPLANTED JFET
- Publication number 20170117418
- Publication date Apr 27, 2017
- UNITED SILICON CARBIDE, INC.
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL JFET MADE USING A REDUCED MASK SET
- Publication number 20170018657
- Publication date Jan 19, 2017
- UNITED SILICON CARBIDE, INC.
- Zhongda Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical JFET Made Using A Reduced Mask Set
- Publication number 20170018627
- Publication date Jan 19, 2017
- UNITED SILICON CARBIDE, INC.
- Zhongda Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Monolithically Integrated Cascode Switches
- Publication number 20150200662
- Publication date Jul 16, 2015
- United Silicone Carbide, Inc.
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Planar multi-implanted JFET

Vertical JFET made using a reduced masked set

Trench vertical JFET with ladder termination

Planar triple-implanted JFET

Vertical JFET made using a reduced mask set

Trench vertical JFET with ladder termination

Planar triple-implanted JFET

Monolithically integrated cascode switches

Patents Applicationslast 30 patents

VERTICAL JUNCTION FIELD-EFFECT TRANSISTORS WITH SOURCE-DRAIN DIODE...

Trench Vertical JFET With Ladder Termination

Vertical JFET Made Using A Reduced Masked Set

Planar Multi-implanted JFET

Trench Vertical JFET With Ladder Termination

Planar Triple-implanted JFET

PLANAR TRIPLE-IMPLANTED JFET

VERTICAL JFET MADE USING A REDUCED MASK SET

Vertical JFET Made Using A Reduced Mask Set

Monolithically Integrated Cascode Switches