Zhongwang SUN

Person

Wuhan, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Three dimensional NAND memory device with novel support structures
- Patent number 12,144,175
- Issue date Nov 12, 2024
- Yangtze Memory Technologies Co., Ltd.
- Di Wang
Information Patent Grant
Three-dimensional NAND memory device and method of forming the same
- Patent number 12,096,631
- Issue date Sep 17, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhong Zhang
Information Patent Grant
3D NAND memory device and method of forming the same
- Patent number 12,068,250
- Issue date Aug 20, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhongwang Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D NAND memory device and method of forming the same
- Patent number 12,046,555
- Issue date Jul 23, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhongwang Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional NAND memory device and method of forming the same
- Patent number 12,041,773
- Issue date Jul 16, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhongwang Sun
- G11 - INFORMATION STORAGE
Information Patent Grant
3D NAND memory device and method of forming the same
- Patent number 12,033,944
- Issue date Jul 9, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhongwang Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Local contacts of three-dimensional memory devices and methods for...
- Patent number 12,022,656
- Issue date Jun 25, 2024
- Yangtze Memory Technologies Co., Ltd.
- Jianzhong Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact structures for three-dimensional memory device
- Patent number 11,910,599
- Issue date Feb 20, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhongwang Sun
Information Patent Grant
3D NAND memory device and method of forming the same
- Patent number 11,862,558
- Issue date Jan 2, 2024
- Yangtze Memory Technologies Co., Ltd.
- Rui Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact structures for three-dimensional memory
- Patent number 11,862,565
- Issue date Jan 2, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhongwang Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D NAND memory device and method of forming the same
- Patent number 11,839,083
- Issue date Dec 5, 2023
- Yangtze Memory Technologies Co., Ltd.
- Yingjie Ouyang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device with bottom-select-gate structure and method for form...
- Patent number 11,749,737
- Issue date Sep 5, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhongwang Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming memory device comprising bottom-select-gate stru...
- Patent number 11,699,732
- Issue date Jul 11, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhongwang Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Staircase structure in three-dimensional memory device and method f...
- Patent number 11,696,439
- Issue date Jul 4, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhong Zhang
Information Patent Grant
Staircase structure in three-dimensional memory device and method f...
- Patent number 11,670,592
- Issue date Jun 6, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Staircase structure in three-dimensional memory device and method f...
- Patent number 11,665,892
- Issue date May 30, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhongwang Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Local contacts of three-dimensional memory devices and methods for...
- Patent number 11,600,633
- Issue date Mar 7, 2023
- Yangtze Memory Technologies Co., Ltd.
- Jianzhong Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional NAND memory device with reduced RC delay
- Patent number 11,587,945
- Issue date Feb 21, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact structures for three-dimensional memory device
- Patent number 11,552,091
- Issue date Jan 10, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhongwang Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D NAND memory device and method of forming the same
- Patent number 11,342,264
- Issue date May 24, 2022
- Yangtze Memory Technologies Co., Ltd.
- Zhongwang Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D NAND memory device and method of forming the same
- Patent number 11,282,854
- Issue date Mar 22, 2022
- Yangtze Memory Technologies Co., Ltd.
- Yingjie Ouyang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and method for forming the same
- Patent number 11,239,247
- Issue date Feb 1, 2022
- Yangtze Memory Technologies Co., Ltd.
- Zhongwang Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and method for forming the same
- Patent number 11,183,575
- Issue date Nov 23, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zhongwang Sun
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
THREE-DIMENSIONAL NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240397718
- Publication date Nov 28, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhong ZHANG
Information Patent Application
3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240339404
- Publication date Oct 10, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhongwang SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240038663
- Publication date Feb 1, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhongwang SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20230282579
- Publication date Sep 7, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhongwang SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STAIRCASE STRUCTURE IN THREE-DIMENSIONAL MEMORY DEVICE AND METHOD F...
- Publication number 20230276620
- Publication date Aug 31, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhong ZHANG
Information Patent Application
LOCAL CONTACTS OF THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR...
- Publication number 20230171961
- Publication date Jun 1, 2023
- Yangtze Memory Technologies Co., Ltd.
- Jianzhong Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20230098143
- Publication date Mar 30, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhong Zhang
- G11 - INFORMATION STORAGE
Information Patent Application
CONTACT STRUCTURES FOR THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20230086425
- Publication date Mar 23, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhongwang SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20220246527
- Publication date Aug 4, 2022
- Yangtze Memory Technologies Co., Ltd.
- Zhongwang SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT STRUCTURES FOR THREE-DIMENSIONAL MEMORY
- Publication number 20220139837
- Publication date May 5, 2022
- Yangtze Memory Technologies Co., Ltd.
- Zhongwang SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL 3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20220045098
- Publication date Feb 10, 2022
- Yangtze Memory Technologies Co., Ltd.
- Yingjie OUYANG
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20220037490
- Publication date Feb 3, 2022
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Zhongwang SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20220037354
- Publication date Feb 3, 2022
- Yangtze Memory Technologies Co., Ltd.
- Zhong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20220013459
- Publication date Jan 13, 2022
- Yangtze Memory Technologies Co., Ltd.
- Zhongwang SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING MEMORY DEVICE
- Publication number 20210384309
- Publication date Dec 9, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zhongwang SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20210367051
- Publication date Nov 25, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zhongwang SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20210366917
- Publication date Nov 25, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zhongwang SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20210358945
- Publication date Nov 18, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zhong ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STAIRCASE STRUCTURE IN THREE-DIMENSIONAL MEMORY DEVICE AND METHOD F...
- Publication number 20210296232
- Publication date Sep 23, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Zhong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STAIRCASE STRUCTURE IN THREE-DIMENSIONAL MEMORY DEVICE AND METHOD F...
- Publication number 20210296334
- Publication date Sep 23, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Zhong ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STAIRCASE STRUCTURE IN THREE-DIMENSIONAL MEMORY DEVICE AND METHOD F...
- Publication number 20210296335
- Publication date Sep 23, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Zhongwang SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT STRUCTURES FOR THREE-DIMENSIONAL MEMORY
- Publication number 20210287991
- Publication date Sep 16, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zhongwang SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCAL CONTACTS OF THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR...
- Publication number 20210272982
- Publication date Sep 2, 2021
- Yangtze Memory Technologies Co., Ltd.
- Jianzhong Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20210265268
- Publication date Aug 26, 2021
- Yangtze Memory Technologies Co., Ltd.
- Rui SU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT STRUCTURES FOR THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20210265375
- Publication date Aug 26, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zhongwang SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL MEMORY DEVICES
- Publication number 20210257386
- Publication date Aug 19, 2021
- Yangtze Memory Technologies Co., Ltd.
- Di WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20210225872
- Publication date Jul 22, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zhongwang SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCAL CONTACTS OF THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR...
- Publication number 20210225863
- Publication date Jul 22, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Jianzhong Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20210193574
- Publication date Jun 24, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zhongwang SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20210193676
- Publication date Jun 24, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zhong Zhang
- G11 - INFORMATION STORAGE

Zhongwang SUN

Person

Patents Grantslast 30 patents

Three dimensional NAND memory device with novel support structures

Three-dimensional NAND memory device and method of forming the same

3D NAND memory device and method of forming the same

3D NAND memory device and method of forming the same

Three-dimensional NAND memory device and method of forming the same

3D NAND memory device and method of forming the same

Local contacts of three-dimensional memory devices and methods for...

Contact structures for three-dimensional memory device

3D NAND memory device and method of forming the same

Contact structures for three-dimensional memory

3D NAND memory device and method of forming the same

Memory device with bottom-select-gate structure and method for form...

Method for forming memory device comprising bottom-select-gate stru...

Staircase structure in three-dimensional memory device and method f...

Staircase structure in three-dimensional memory device and method f...

Staircase structure in three-dimensional memory device and method f...

Local contacts of three-dimensional memory devices and methods for...

Three-dimensional NAND memory device with reduced RC delay

Contact structures for three-dimensional memory device

3D NAND memory device and method of forming the same

3D NAND memory device and method of forming the same

Memory device and method for forming the same

Memory device and method for forming the same

Patents Applicationslast 30 patents

THREE-DIMENSIONAL NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME

3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME

3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME

3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME

STAIRCASE STRUCTURE IN THREE-DIMENSIONAL MEMORY DEVICE AND METHOD F...

LOCAL CONTACTS OF THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR...

THREE-DIMENSIONAL NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME

CONTACT STRUCTURES FOR THREE-DIMENSIONAL MEMORY DEVICE

3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME

CONTACT STRUCTURES FOR THREE-DIMENSIONAL MEMORY

NOVEL 3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME

MEMORY DEVICE AND METHOD FOR FORMING THE SAME

THREE-DIMENSIONAL NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME

3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME

METHOD FOR FORMING MEMORY DEVICE

MEMORY DEVICE AND METHOD FOR FORMING THE SAME

MEMORY DEVICE AND METHOD FOR FORMING THE SAME

THREE-DIMENSIONAL NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME

STAIRCASE STRUCTURE IN THREE-DIMENSIONAL MEMORY DEVICE AND METHOD F...

STAIRCASE STRUCTURE IN THREE-DIMENSIONAL MEMORY DEVICE AND METHOD F...

STAIRCASE STRUCTURE IN THREE-DIMENSIONAL MEMORY DEVICE AND METHOD F...

CONTACT STRUCTURES FOR THREE-DIMENSIONAL MEMORY

LOCAL CONTACTS OF THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR...

3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME

CONTACT STRUCTURES FOR THREE-DIMENSIONAL MEMORY DEVICE

VERTICAL MEMORY DEVICES

THREE-DIMENSIONAL NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME

LOCAL CONTACTS OF THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR...

3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME

THREE-DIMENSIONAL NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME