Zhongwei Zhu

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Modifying ferroelectric properties of hafnium oxide with hafnium ni...
- Patent number 11,923,404
- Issue date Mar 5, 2024
- Lam Research Corporation
- Hyungsuk Alexander Yoon
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Capping layer for a hafnium oxide-based ferroelectric material
- Patent number 11,923,189
- Issue date Mar 5, 2024
- Lam Research Corporation
- Hyungsuk Alexander Yoon
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods for forming germanium and silicon germanium nanowire devices
- Patent number 9,911,660
- Issue date Mar 6, 2018
- Lam Research Corporation
- Hyungsuk Alexander Yoon
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CHEMICAL ETCH NONVOLATILE MATERIALS FOR MRAM PATTERNING
- Publication number 20220376174
- Publication date Nov 24, 2022
- LAM RESEARCH CORPORATION
- Wenbing YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MODIFYING FERROELECTRIC PROPERTIES OF HAFNIUM OXIDE WITH HAFNIUM NI...
- Publication number 20210028273
- Publication date Jan 28, 2021
- LAM RESEARCH CORPORATION
- Hyungsuk Alexander YOON
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
CAPPING LAYER FOR A HAFNIUM OXIDE-BASED FERROELECTRIC MATERIAL
- Publication number 20210020433
- Publication date Jan 21, 2021
- LAM RESEARCH CORPORATION
- Hyungsuk Alexander YOON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR IMPROVING PERFORMANCE IN HAFNIUM OXIDE-BASED FERROELECT...
- Publication number 20190057860
- Publication date Feb 21, 2019
- LAM RESEARCH CORPORATION
- Hyungsuk Alexander YOON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING GERMANIUM AND SILICON GERMANIUM NANOWIRE DEVICES
- Publication number 20170309521
- Publication date Oct 26, 2017
- LAM RESEARCH CORPORATION
- Hyungsuk Alexander Yoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEMS AND METHODS FOR FORMING SELECTIVE METAL ELECTRODE LAYERS FO...
- Publication number 20160138166
- Publication date May 19, 2016
- LAM RESEARCH CORPORATION
- Hyungsuk Alexander Yoon
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Zhongwei Zhu

Person

Patents Grantslast 30 patents

Modifying ferroelectric properties of hafnium oxide with hafnium ni...

Capping layer for a hafnium oxide-based ferroelectric material

Methods for forming germanium and silicon germanium nanowire devices

Patents Applicationslast 30 patents

CHEMICAL ETCH NONVOLATILE MATERIALS FOR MRAM PATTERNING

MODIFYING FERROELECTRIC PROPERTIES OF HAFNIUM OXIDE WITH HAFNIUM NI...

CAPPING LAYER FOR A HAFNIUM OXIDE-BASED FERROELECTRIC MATERIAL

METHODS FOR IMPROVING PERFORMANCE IN HAFNIUM OXIDE-BASED FERROELECT...

METHODS FOR FORMING GERMANIUM AND SILICON GERMANIUM NANOWIRE DEVICES

SYSTEMS AND METHODS FOR FORMING SELECTIVE METAL ELECTRODE LAYERS FO...